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The widespread utilization of metamaterials, despite their immense transformative potential, faces challenges regarding scalability in mass production. To address these limitations, an additive method that leverages liquid inks and selective wetting to produce scalable and cost‐effective metamaterials is presented. UV‐based imprinting lithography is utilized to fabricate surface energy‐modulated patterns, enabling precise solution patterning. This approach, unlike conventional UV‐based imprinting lithography, not only accurately produces the negative replica of the stamp topography during UV‐induced crosslinking but also transfers a hydrophobic layer onto the raised surfaces of the imprinted hydrophilic layer, resulting in 3D shapes with spatially modulated surface energy. In the second process step, a functional ink is dragged over the patterned substrate where it dewets to fill the hydrophilic recesses. This innovative process enables high‐speed metamaterial production, with ink deposition speeds up to 12 m min−1. The method accommodates a wide range of inks, including metals, dielectrics, and semiconductors, providing meticulous control over vertical structures such as pattern thickness and hetero‐multilayer formation. Additionally, it offers flexibility in creating metamaterials on free‐standing ultra‐thin sheets, introducing desirable attributes like foldability and disposability. The effectiveness of this approach is validated through the fabrication and characterization of metallic metamaterials. [ABSTRACT FROM AUTHOR]

Vapor sensors with both high sensitivity and broad detection range are technically challenging yet highly desirable for widespread chemical sensing applications in diverse environments. Generally, an increased surface‐to‐volume ratio can effectively enhance the sensitivity to low concentrations, but often with the trade‐off of a constrained sensing range. Here, an approach is demonstrated for NH3 sensor arrays with an unprecedentedly broad sensing range by introducing controllable steps on the surface of an n‐type single crystal. Step edges, serving as adsorption sites with electron‐deficient properties, are well‐defined, discrete, and electronically active. NH3 molecules selectively adsorb at the step edges and nearly eliminate known trap‐like character, which is demonstrated by surface potential imaging. Consequently, the strategy can significantly boost the sensitivity of two‐terminal NH3 resistance sensors on thin crystals with a few steps while simultaneously enhancing the tolerance on thick crystals with dense steps. Incorporation of these crystals into parallel sensor arrays results in ppb–to–% level detection range and a convenient linear relation between sheet conductance and semi‐log NH3 concentration, allowing for the precise localization of vapor leakage. In general, the results suggest new opportunities for defect engineering of organic semiconductor crystal surfaces for purposeful vapor or chemical sensing. [ABSTRACT FROM AUTHOR]

The relationship between hole density and conductivity in electrochemically gated polythiophene films is examined. The films are integrated into electrolyte‐gated transistors (EGTs), so that hole accumulations can be electrochemically modulated up to ≈0.4 holes per thiophene ring (hpr). Polythiophenes include poly(3‐alkylthiophenes) (P3ATs) with four different side chain lengths – butyl (P3BT), hexyl (P3HT), octyl (P3OT), or decyl (P3DT) – and poly[2,5‐bis(3‐dodecylthiophen‐2‐yl)thieno[3,2‐b]thiophene] (PBTTT) and poly(3,3′′′‐didodecyl[2,2′:5′,2′′:5′′,2′′′‐quaterthiophene]‐5,5′′′‐diyl) (PQT). Analysis of the drain current – gate voltage (ID–VG) and gate current – gate voltage (IG–VG) characteristics of the EGTs reveals that all six polythiophene semiconductors exhibited reversible conductivity peaks at 0.12 – 0.15 hpr. Conductivity is suppressed beyond ≈0.4 hpr.The maximum carrier mobilities of the P3AT semiconductors increase, and hysteresis of the conductivity peaks decreases, with increasing alkyl side‐chain length. PBTTT and PQT with reduced side chain densities exhibit the largest hysteresis but have higher hole mobilities. The results suggest that at ≈0.4 hpr, a polaronic sub‐band is filled in all cases. Filling of the sub‐band correlates with a collapse in the hole mobility. The side‐chain dependence of the peak conductivity and hysteresis further suggests that Coulombic ion‐carrier interactions are important in these systems. Tailoring ion‐carrier correlations is likely important for further improvements in transport properties of electrochemically doped polythiophenes. [ABSTRACT FROM AUTHOR]

A facile, high‐resolution patterning process is introduced for fabrication of electrolyte‐gated transistors (EGTs) and circuits using a photo‐crosslinkable ion gel and stencil‐based screen printing. The photo‐crosslinkable gel is based on a triblock copolymer incorporating UV‐sensitive terminal azide functionality and a common ionic liquid. Using this material in conjunction with conventional photolithography and stenciling techniques, well‐defined 0.5–1 μm thick ion gel films are patterned on semiconductor channels as narrow as 10 μm. The resulting n‐type ZnO EGTs display high electron mobility (>2 cm2 Vs−1) and on/off current ratios (>105). Further, EGT‐based inverters exhibit static gains >23 at supply voltages below 3 V, and five‐stage EGT ring oscillator circuits display dynamic propagation delays of 50 μs per stage. In general, the screen printing and photo‐crosslinking strategy provides a clean room‐compatible method to fabricate EGT circuits with improved sensitivity (gain) and computational power (gain × oscillating frequency). Detailed device analysis indicates that significantly shorter delay times, of order 1 μs, can be obtained by improving the ion gel conductance. [ABSTRACT FROM AUTHOR]

Graphene micro-supercapacitors (MSCs) are an attractive energy storage technology for powering miniaturized portable electronics. Despite considerable advances in recent years, device fabrication typically requires conventional microfabrication techniques, limiting the translation to cost-effective and high-throughput production. To address this issue, we report here a self-aligned printing process utilizing capillary action of liquid inks in microfluidic channels to realize scalable, high-fidelity manufacturing of graphene MSCs. Microstructured ink receivers and capillary channels are imprinted on plastic substrates and filled by inkjet printing of functional materials into the receivers. The liquid inks move under capillary flow into the adjoining channels, allowing reliable patterning of electronic materials in complex structures with greatly relaxed printing tolerance. Leveraging this process with pristine graphene and ion gel inks, miniaturized all-solid-state graphene MSCs are demonstrated to concurrently achieve outstanding resolution (active footprint: <1 mm2, minimum feature size: 20 µm) and yield (44/44 devices), while maintaining a high specific capacitance (268 µF cm-2) and robust stability to extended cycling and bending, establishing an effective route to scale down device size while scaling up production throughput. [ABSTRACT FROM AUTHOR]

Electronic disorder in organic semiconductor single crystals, manifested as parallel surface potential domains with potential variations ranging from tens to hundreds of mV, is observed by scanning Kelvin probe microscopy. Chemical etching and X-ray diffraction indicate that the potential domains are correlated with planar defects such as stacking faults. The results have important implications for understanding structure-transport relationships in organic semiconductor single crystals. [ABSTRACT FROM AUTHOR]

Isotopic substitution is a useful method to study the influence of nuclear motion on the kinetics of charge transport in semiconductors. However, in organic semiconductors, no observable isotope effect on field‐effect mobility has been reported. To understand the charge transport mechanism in rubrene, the benchmark organic semiconductor, crystals of fully isotopically substituted rubrene, 13C‐rubrene (13C42H28), are synthesized and characterized. Vapor‐grown 13C‐rubrene single crystals have the same crystal structure and quality as native rubrene crystals (i.e., rubrene with a natural abundance of carbon isotopes). The characteristic transport signatures of rubrene, including room temperature hole mobility over 10 cm2 V−1 s−1, intrinsic band‐like transport, and clear Hall behavior in the accumulation layer of air‐gap transistors, are also observed for 13C‐rubrene crystals. The field‐effect mobility distributions based on 74 rubrene and 13C‐rubrene devices, respectively, reveal that 13C isotopic substitution produces a 13% reduction in the hole mobility of rubrene. The origin of the negative isotope effect is linked to the redshift of vibrational frequencies after 13C‐substitution, as demonstrated by computer simulations based on the transient localization (dynamic disorder) scenario. Overall, the data and analysis provide an important benchmark for ongoing efforts to understand transport in ordered organic semiconductors. [ABSTRACT FROM AUTHOR]

The article offers information on the electronic transport characterization and 2D insulator–metal transition. Topics discussed include challenges in developing oxide thin-film transistor (TFTs); reduction of operating voltage; and the analysis of capacitance and mobility along with the formation of electric double layers (EDLs) at the electrolyte and electrolyte/semiconductor interfaces.

The article offers information on printed electronics, a field for the manufacture of electronic devices with low cost and minimal material waste. Topics discussed include its applications, such as displays, distributed sensing, smart packaging, and energy management; usage of roll techniques in printed transistors; and the igration of electrolyte ions toward the gate electrode and the semiconductor upon application of a gate voltage.

Detailed knowledge of homoepitaxial growth modes in organic semiconductor thin films is critically important for understanding the interlayer electrostatic coupling and the surface energetics of device-active organic films, yet it is still largely missing due to the lack of effective characterization tools. This paper presents a convenient approach to characterize explicitly the homoepitaxial growth modes of pentacene bilayers thermally deposited on different dielectrics by combining two scanning probe microscopy (SPM) imaging modes, i.e., friction force microscopy (FFM) and transverse shear microscopy (TSM). It is found that pentacene second layer grains consistently exhibit a mosaic of homoepitaxial modes (commensurism, coincidence, and non-epitaxy) regardless of the substrate type and deposition condition. Among different homoepitaxial modes, a coincident twist epitaxy is more frequently observed. This combined FFM/TSM technique offers a feasible way to identify complex microstructural motifs such that a deeper understanding of growth and structure-property relationships in organic semiconductor thin films is possible. [ABSTRACT FROM AUTHOR]