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The traps in an AlGaN/GaN metal-insulator-silicon-high-electronmobility- transistor on silicon are investigated by analysing the random-telegraph-signal (RTS) noise in the drain current. Two different types of RTS noise due to the traps at the gate-oxide and AlGaN have been observed in this reported work. Through the analysis of the two RTS noises, the presences of the two trap types are verified and the trap locations have also been identified. [ABSTRACT FROM AUTHOR]

ABSTRACT The advances in semiconductor fabrication technologies have enabled the integration of Lamb-wave resonator on silicon substrate. But such integration has led to additional parasitic effects to the Lamb-wave resonators. The availability of an efficient equivalent-circuit model is thus vital. This paper proposes a modified hybrid π-type/Butterworth-Van Dyke (PiBVD) model. Compared with the conventional PiBVD model, the modified PiBVD model accounts for the parasitic inductances of the bonding wires. It therefore provides better accuracy when characterizing Lamb-wave resonators over a wide frequency range. Experiment results have also verified that the modified PiBVD model has better fitting on Y11 (input reflection factor in Y-parameter matrix). This improvement is greatly beneficial for resonator analysis and circuit designs © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:703-706, 2017 [ABSTRACT FROM AUTHOR]

A large capacitive load amplifier with enhanced active-feedback frequency compensation is proposed in this paper. The enhancement is achieved through using a wide-bandwidth scalar circuit to increase the transconductance of the output stage so that the overall bandwidth of the amplifier can be extended considerably. Implemented in a standard CMOS 130-nm technology, with a supply of 0.7 V and consuming 27 μA of current, the amplifier drives a load capacitor of 15 nF. No on-chip resistor is needed; only a 0.91-pF compensation capacitor is used to maintain stability. The achieved gain-bandwidth product and phase margin are 1.28 MHz and 66.9°, respectively. Moreover, the slew rate is 0.263 V/μs. The active chip area is 0.0056 mm2. Copyright © 2017 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]