1. Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion.
- Author
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Sun, Ruize, Liang, Yung C., Yeo, Yee‐Chia, Wang, Yun‐Hsiang, and Zhao, Cezhou
- Subjects
- *
BAND gaps , *INTEGRATED circuits , *ELECTRIC potential , *ELECTRONIC band structure , *ELECTRONIC structure , *WIDE gap semiconductors - Abstract
In order to examine the feasibility of full wide-bandgap GaN-based converters in aerospace power conversion applications, this paper proposes a monolithic DC-DC buck converter design with integrated high-side gate driver, over-current protection, and pulse-width-modulation feedback control circuits based on full AlGaN/GaN MIS-HEMT configuration. After model calibration of the DC and transient behaviors with fabricated normally-ON and normally-OFF AlGaN/GaN MIS-HEMT devices, the DC-DC buck converter is simulated. The circuit converts the input 100 V down to an adjustable range at 1 MHz switching frequency. The over-current protection function can properly protect the converter at a preset over-current threshold. The converter can respond to the load current and line input voltage fluctuations due to the integrated feedback control. These results illustrate the performance of proposed all-GaN DC-DC power converter design. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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