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AlGaN/GaN high electron mobility transistors on QST engineered substrates are grown with different GaN/AlGaN buffer layer thickness. The as‐grown heterostructures are evaluated for their structural quality via atomic force microscopy, high‐resolution X‐ray diffraction, Raman spectroscopy, and steady‐state thermoreflectance. Transistor devices are fabricated and evaluated via DC and pulsed electrical techniques, as well as thermoreflectance imaging. It is reported that buffer layer thickness of at least 10 μm can result in lateral high electron mobility transistors (HEMTs) with simultaneously high GaN quality, low stress, good DC electrical performance, low current collapse, and low thermal resistance. [ABSTRACT FROM AUTHOR]

Herein, the electrical and thermal performance of lateral AlGaN/GaN high electron mobility transistors (HEMTs) and metal‐insulator‐semiconductor field effect transistors (MISFETs) fabricated with 11 μm thick GaN buffer layers on 200 mm diameter Qromis Substrate Technology (QST) substrates are investigated. The QST substrate has a polycrystalline core engineered to be coefficient of thermal expansion (CTE)‐matched to GaN to minimize wafer bow and residual stress in the GaN film as a result of epitaxial growth. Raman spectroscopy is used to determine the biaxial residual stress in the GaN buffer of the as‐fabricated devices. Electrical characterization is demonstrated on the HEMTs including DC and pulsed output characteristics, DC transfer characteristics, Hall mobility, carrier concentration, sheet resistance, median transition frequency, and maximum stable gain. Finally, the thermal performance of the AlGaN/GaN MISFET is assessed via thermoreflectance thermal imaging at DC power densities up to 19 W mm−1. The thermal resistance of the MISFET, calculated using the peak temperature rises on the gate electrode for DC power densities <10 W mm−1, is measured to be 15.4 mm K W−1, which is comparable with state‐of‐the‐art GaN‐on‐Si lateral transistors. [ABSTRACT FROM AUTHOR]

Top-side integration of nanocrystalline diamond films in the fabrication sequence of AlGaN/GaN high electron mobility transistors is demonstrated. Reliable oxygen plasma etching of the diamond capping layer, required for a diamond-before-gate process, was implemented by using a sacrificial SiN 'dummy' gate. Hall characterization showed minimal (∼6%) reduction in sheet carrier density and commensurate increase in sheet resistance, while maintaining mobility and on-state drain current density. Off-state drain current and threshold voltage were increased, likely by fluorination of the AlGaN surface after removal of the sacrificial gate, even though a 20 nm thick Al2O3 layer was used as a SF6-plasma etch stop. Pulsed IDS and on-resistance were improved, indicating that a 10 nm SiN/500 nm NCD could offer improved AlGaN surface passivation compared to a more conventional 100 nm thick PECVD SiN film. [ABSTRACT FROM AUTHOR]

This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emitting diode nanowires. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Memtransistors: Programmable Multilevel Memtransistors Based on van der Waals Heterostructures (Adv. In article number 1900333, Jihyun Kim and co-workers demonstrate a programmable memtransistor architecture based on van der Waals heterostructure with high computing functionality. These memtransistors, monolithically integrating a 2D memristor with a 2D transistor, exhibit a programmable multi-state computing window with a tunable current on/off ratio. [Extracted from the article]

Neuromorphic computing that mimics the energy‐efficient cortical neural network in the human brain is attractive because of its possibility to process complex and massive data sets and achieve fast computing capability. Herein, a heterosynaptic and programmable memtransistor architecture with high computing functionality is reported by monolithically integrating a hexagonal boron nitride (h‐BN) memristor with a molybdenum disulfide (MoS2) transistor. Memristors consisting of a vertically stacked van der Waals materials (multilayer graphene (MLG) and h‐BN) exhibit a stable bipolar resistive switching behavior with a memory window more than three orders of magnitude due to the formation and rupture of the metallic filament within the h‐BN layer. By controlling the resistance state of the h‐BN memristor, the behaviors of the memtransistor can be programmed with a high switching ratio of ≈104, showing ≈16 pW standby power consumption. A multistate computing window and tunable current on/off ratio can be achieved by controlling the synaptic weight of the memristor, demonstrating that the presented 2D architecture can be exploited as a logic inverter device. The results pave the way toward the development of highly functional neuromorphic systems for the next‐generation in‐memory computing. [ABSTRACT FROM AUTHOR]

Activation of ion‐implanted p‐type dopants in gallium nitride has demonstrated great progress utilizing high pressures to enable novel and traditional device architectures; however, such conditions consistently exhibit anomalously enhanced diffusion up to several microns in very short periods of time for device relevant concentrations. Here, this diffusion is shown to be modulated by unintentional hydrogen content within the anneal ambient and thus controllable by inclusion of a high‐temperature hydrogen getter. Furthermore, diffusion is also shown to be greatly suppressed using co‐implanted oxygen at low concentrations while simultaneously maintaining characteristics of p‐type material in photoluminescence. Subsequently, after annealing at 1300 °C for 30 min in 3.8 kbar of nitrogen pressure, the magnesium concentration in the diffusion tail is suppressed by 28% at 1–1.5 μm in depth using a hydrogen getter alone, which reduces hydrogen uptake by 45% and fully suppressed at >1 μm in depth using co‐implantation alone and further reduced with concurrent use of a hydrogen getter. Co‐implantation alone reduces the in‐diffused magnesium dose by 60% compared to reference samples. [ABSTRACT FROM AUTHOR]