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Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . Apr2016, Vol. 213 Issue 4, p893-897. 5p. - Publication Year :
- 2016
-
Abstract
- Top-side integration of nanocrystalline diamond films in the fabrication sequence of AlGaN/GaN high electron mobility transistors is demonstrated. Reliable oxygen plasma etching of the diamond capping layer, required for a diamond-before-gate process, was implemented by using a sacrificial SiN 'dummy' gate. Hall characterization showed minimal (∼6%) reduction in sheet carrier density and commensurate increase in sheet resistance, while maintaining mobility and on-state drain current density. Off-state drain current and threshold voltage were increased, likely by fluorination of the AlGaN surface after removal of the sacrificial gate, even though a 20 nm thick Al2O3 layer was used as a SF6-plasma etch stop. Pulsed IDS and on-resistance were improved, indicating that a 10 nm SiN/500 nm NCD could offer improved AlGaN surface passivation compared to a more conventional 100 nm thick PECVD SiN film. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 213
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 114490762
- Full Text :
- https://doi.org/10.1002/pssa.201532570