33 results on '"Tang, Zhikai"'
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2. A novel method for estimating the SNR of unknown emitter signal
3. Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation.
4. Adaptive Direction Detection in Deterministic Interference and Partially Homogeneous Noise.
5. Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance.
6. Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer.
7. Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs.
8. Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation.
9. Recent development in flourine-ion-implanted GaN-based heterojunction power devices.
10. 600V 1.3mμ·cm2 low-leakage low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx passivation.
11. Study on Natural Frequencies Tuning Method of Nearest-Neighbor Coupled Oscillators.
12. Low profile, low cost and high efficiency phased array for automobile radar and communication systems.
13. Analysis of oscillator array dynamics for phase-shifterless beam-scanning.
14. Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs.
15. GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures.
16. A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs.
17. Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components.
18. Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs.
19. Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors Under Hard Switching Operation.
20. Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier.
21. Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer.
22. High-fMAX High Johnson's Figure-of-Merit 0.2- \mum Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiNx Passivation.
23. High-Quality Interface in Al2O3/GaN/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation.
24. 600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse.
25. High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/ \SiNx Passivation.
26. Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges.
27. Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes.
28. Monolithically integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies.
29. Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques.
30. A coupled oscillator array with its application in null directions forming.
31. Injection locking phenomena of Van der Pol oscillator.
32. Low profile, low cost and high efficiency phased array.
33. A new method in DFD design.
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