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Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS2, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.

Highly stable nanopores with precise size and film thickness are essential for ultrasensitive molecular biosensors and efficient ion filters. However, the stability of both solid-state nanopores and biological nanopores is of a few hours. Even for two-dimensional (2D) materials with excellent properties, it is very difficult to prepare nanopores with stability for more than 1 day. Here, in mechanically exfoliated 2D materials with excellent quality, highly stable nanopores have been fabricated. Through the manual control of defect density and laser spot irradiation, the breakdown process is more controllable. The nanopore diameter can be precisely adjusted from 1 to 10 nm. The 2 nm thick graphene nanopore (with a diameter of 2 nm) maintains good consistency in conductivity during the 1-month immersion in KCl (1 M) solution. The pore size changes less than 0.7% per day. We found that 2D material nanopores can produce a strong rectification ratio (∼50) due to the morphology undulation. In addition, our devices can recognize modified 5 nm Au nanoparticles, showing great potential for single-molecule detection. This work can guide the development of high-quality ion rectifier devices and biosensors based on 2D material nanopores.

Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS

Vertically stacked devices of two-dimensional layered materials (2DLMs) based on van der Waals heterostructures (vdWHs) have recently attracted considerable attention due to their good properties. A tunneling structure is presented in this paper that, unlike other tunneling structures, has no specific insulating two-dimensional materials, such as boron nitride. The tunneling structure is comprised of graphene and black phosphorus. Black phosphorus is chemically active, and can be easily oxidized in the air to form an insulating layer. A tunneling device was produced based on this characteristic of black phosphorus. The insulation layer was an oxide layer formed by the oxidation of black phosphorus. The structure takes advantage of the easy oxidation ability of black phosphorus. The presence of a black phosphorus oxide layer was determined by XPS analysis. The tunneling characteristics of the overlay structure were determined by measuring the current-voltage (Id-V) curve of the device. Simulation studies showed that the oxidation layer was responsible for the tunneling effect. Compared with other black phosphorus devices, the photoelectric properties of the proposed device were greatly improved.