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We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single-layer graphene spin channel and relies on spin injection and spin transport in the graphene. We utilize electrical bias tuning of spin injection to balance the inputs and achieve "exclusive or" (xor) logic operation. Furthermore, a simulation of the device performance shows that substantial improvement towards spintronic applications can be achieved by optimizing the device parameters such as the device dimensions. This advance holds promise as a basic building block for spin-based information processing.

Extraction of electrons from a semiconductor to a ferromagnet as well as the case of injection in the reverse direction may be formulated as a scattering theory. However, the presence of bound states at the interface arising out of doping on the semiconductor side must be taken into account in the scattering theory. Inclusion of the interface states yields an explanation of a recent result of spin-imaging measurement which contradicts the current understanding of spin extraction. The importance of an extraction theory to spintronics is illustrated by an application to a spin switch.

The helicity of a circularly polarized light beam may be determined by the spin direction of photoexcited electrons in a III-V semiconductor. We present a theoretical demonstration on how the direction of the ensuing electron spin polarization may be determined by electrical means of two ferromagnet/semiconductor Schottky barriers. The proposed scheme allows for the time-resolved detection of spin accumulation in small structures and may have a device application. (c) 2006 American Institute of Physics.

We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third connected to a capacitor, affect the currents and voltages. In a steady state, the voltage on the capacitor is related to spin accumulation in the channel. When the magnetization of one of the terminals is rotated, a transient current is triggered. This effect can be used for electrical detection of magnetization reversal dynamics of an electrode or for dynamical readout of the alignment of two magnetic contacts.

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin-diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room-temperature amplification of the magnetoresistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.

A one-dimensional (1D) theory of lateral spin-polarized transport is derived from the two-dimensional flow in the vertical cross section of a stack of ferromagnetic and paramagnetic layers. This takes into account the influence of the lead on the lateral current underneath, in contrast to the conventional 1D modeling by the collinear configuration of lead/channel/lead. Our theory is convenient and appropriate for the current in-plane configuration of an all-metallic spintronics structure as well as for the planar structure of a semiconductor with ferromagnetic contacts. For both systems we predict the optimal contact width for maximal magnetoresistance and propose an electrical measurement of the spin-diffusion length for a wide range of materials.

Author(s): H. Dery (corresponding author) [1]; P. Dalal [1]; Ł. Cywiński [1]; L. J. Sham [1] Research in semiconductor spintronics aims to extend the scope of conventional electronics by using [...]

A salient feature of motor and sensory circuits in the brain is their contralateral hemispheric bias-a feature that might play a role in integration and learning of sensorimotor skills. In the current behavioral study, we examined whether the lateral configuration between sound-producing hand and feedback-receiving ear affects performance and learning of an audio-motor skill. Right-handed participants (n = 117) trained to play a piano sequence using their right or left hand while auditory feedback was presented monaurally, either to the right or left ear. Participants receiving auditory feedback to the contralateral ear during training performed better than participants receiving ipsilateral feedback (with respect to the training hand). Furthermore, in the Left-Hand training groups, the contralateral training advantage persisted in a generalization task. Our results demonstrate that audio-motor learning is sensitive to the lateral configuration between motor and sensory circuits and suggest that integration of neural activity across hemispheres facilitates such learning., Competing Interests: The authors declare no competing interests., (© 2023 The Author(s).)

Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pumping of resident electrons in n-doped WSe 2 and WS 2 monolayers. We observe that, using a continuous wave laser and appropriate doping and excitation densities, negative trion doublet lines exhibit circular polarization of opposite sign and the photoluminescence intensity of the triplet trion is more than four times larger with circular excitation than with linear excitation. We interpret our results as a consequence of a large dynamic polarization of resident electrons using circular light., (© 2021. The Author(s).)

The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe 2 . These excitonic satellites are composed of three major peaks with energy separations matching known phonons, and appear only with electron doping. They possess homogenous spatial and spectral distribution, strong power saturation, and anomalously long population (>6 µs) and polarization lifetimes (>100 ns). Resonant excitation of the free inter- and intravalley bright trions leads to opposite optical orientation of the satellites, while excitation of the free dark trion resonance suppresses the satellites' photoluminescence. Defect-controlled crystal synthesis and scanning tunneling microscopy measurements provide corroboration that these features are dark excitons bound to dilute donors, along with associated phonon replicas. Our work opens opportunities to engineer homogenous single emitters and explore collective quantum optical phenomena using intrinsic donor-bound excitons in ultraclean 2D semiconductors.

The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects. Here, we report the observation of multiple valley phonons - phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone - and the resulting exciton complexes in the monolayer semiconductor WSe 2 . We find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncover an intervalley exciton near charge neutrality. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe 2 is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons.

Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS 2 . Our device combines the superior spin transport properties of graphene with the strong spin-orbit coupling of MoS 2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS 2 with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.