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2 results on '"GaN-based field-effect transistors (FETs)"'

1. 3–3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages.

Author

Rubio, Jorge Moreno, Fang, Jie, Camarchia, Vittorio, Quaglia, Roberto, Pirola, Marco, and Ghione, Giovanni

Subjects
*GALLIUM nitride, *MICROWAVE amplifiers, *FIELD-effect transistors, *FREQUENCY changers, *POWER amplifiers, *BANDWIDTHS, *IEEE 802.16 (Standard)
Abstract

We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3–3.6-GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth. The realized amplifier is based on a packaged GaN HEMT and shows, at 6 dB of output power back-off, a drain efficiency higher than 38% in the 3–3.6-GHz band, gain around 10 dB, and maximum power between 43 and 44 dBm, with saturated efficiency between 55% and 66%. With respect to the state of the art, we obtain, at a higher frequency, a wideband amplifier with similar performances in terms of bandwidth, output power, and efficiency, through a simpler approach. Moreover, the measured constant maximum output power of 20 W suggests that the power utilization factor of the 10-W (Class A) GaN HEMT is excellent over the amplifier band. [ABSTRACT FROM AUTHOR]

Published
2012
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2. 3–3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages

Author

Jorge Moreno Rubio, Jie Fang, Roberto Quaglia, Marco Pirola, Giovanni Ghione, and Vittorio Camarchia

Subjects
WiMAX, wideband microwave amplifiers, Engineering, Power-added efficiency, Radiation, FET amplifier, business.industry, Amplifier, Doherty power amplifiers (PAs), RF power amplifier, Electrical engineering, Power bandwidth, Condensed Matter Physics, Broadband matching networks, Fully differential amplifier, Electronic engineering, Linear amplifier, GaN-based field-effect transistors (FETs), Electrical and Electronic Engineering, business, Direct-coupled amplifier
Abstract

We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3-3.6-GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth. The realized amplifier is based on a packaged GaN HEMT and shows, at 6 dB of output power back-off, a drain efficiency higher than 38% in the 3-3.6-GHz band, gain around 10 dB, and maximum power between 43 and 44 dBm, with saturated efficiency between 55% and 66%. With respect to the state of the art, we obtain, at a higher frequency, a wideband amplifier with similar performances in terms of bandwidth, output power, and efficiency, through a simpler approach. Moreover, the measured constant maximum output power of 20 W suggests that the power utilization factor of the 10-W (Class A) GaN HEMT is excellent over the amplifier band.

Published
2012
Full Text
View/download PDF

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