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We propose 2D Piezoelectric FET (PeFET) based compute-enabled non-volatile memory for ternary deep neural networks (DNNs). PeFETs consist of a material with ferroelectric and piezoelectric properties coupled with Transition Metal Dichalcogenide channel. We utilize (a) ferroelectricity to store binary bits (0/1) in the form of polarization (-P/+P) and (b) polarization dependent piezoelectricity to read the stored state by means of strain-induced bandgap change in Transition Metal Dichalcogenide channel. The unique read mechanism of PeFETs enables us to expand the traditional association of +P (-P) with low (high) resistance states to their dual high (low) resistance depending on read voltage. Specifically, we demonstrate that +P (-P) stored in PeFETs can be dynamically configured in (a) a low (high) resistance state for positive read voltages and (b) their dual high (low) resistance states for negative read voltages, without afflicting a read disturb. Such a feature, which we name as Polarization Preserved Piezoelectric Effect Reversal with Dual Voltage Polarity (PiER), is unique to PeFETs and has not been shown in hitherto explored memories. We leverage PiER to propose a Strain-enabled Ternary Precision Computation-in-Memory (STeP-CiM) cell with capabilities of computing the scalar product of the stored weight and input, both of which are represented with signed ternary precision. Further, using multi word-line assertion of STeP-CiM cells, we achieve massively parallel computation of dot products of signed ternary inputs and weights. Our array level analysis shows 91% lower delay and improvements of 15% and 91% in energy for in-memory multiply-and-accumulate operations compared to near-memory design approaches based on SRAM and PeFET respectively. STeP-CiM exhibits upto 8.91x improvement in performance and 6.07x average improvement in energy over SRAM/PeFET based near-memory design., Comment: Under review at Frontiers of Nanotechnology

In this work, we propose valley-coupled spin-hall memories (VSH-MRAMs) based on monolayer WSe2. The key features of the proposed memories are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) via VSH effect and (b) an integrated gate that can modulate the charge/spin current (IC/IS) flow. The former attribute results in high energy efficiency (compared to the Giant-Spin Hall (GSH) effect-based devices with in-plane magnetic anisotropy (IMA) magnets). The latter feature leads to a compact access transistor-less memory array design. We experimentally measure the gate controllability of the current as well as the nonlocal resistance associated with VSH effect. Based on the measured data, we develop a simulation framework (using physical equations) to propose and analyze single-ended and differential VSH effect based magnetic memories (VSH-MRAM and DVSH-MRAM, respectively). At the array level, the proposed VSH/DVSH-MRAMs achieve 50%/ 11% lower write time, 59%/ 67% lower write energy and 35%/ 41% lower read energy at iso-sense margin, compared to single ended/differential (GSH/DGSH)-MRAMs. System level evaluation in the context of general purpose processor and intermittently-powered system shows up to 3.14X and 1.98X better energy efficiency for the proposed (D)VSH-MRAMs over (D)GSH-MRAMs respectively. Further, the differential sensing of the proposed DVSH-MRAM leads to natural and simultaneous in-memory computation of bit-wise AND and NOR logic functions. Using this feature, we design a computation-in-memory (CiM) architecture that performs Boolean logic and addition (ADD) with a single array access. System analysis performed by integrating our DVSH-MRAM: CiM in the Nios II processor across various application benchmarks shows up to 2.66X total energy savings, compared to DGSH-MRAM: CiM.

In this paper, we demonstrate the principle of operation of a metal-insulator-semiconductor (MIS) capacitor based on undoped organic semiconductor. In spite of low charge concentration within the semiconductor, this device exhibits a capacitance variation with respect to applied gate voltage $V_g$, resembling the capacitance-voltage $C$-$V$ characteristics of a traditional doped semiconductor based MIS capacitor. A physics based model is developed to derive charge concentration, surface potential $\psi_s$ and the capacitance of organic MIS capacitor. The model is validated with TCAD simulation results and is further verified with experimental results obtained from fabricated organic MIS capacitor consisting of poly(4-vinylphenol) and poly(3-hexylthiophene-2,5-diyl) as insulator and semiconductor, respectively.