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Electromagnetic patterns in near field scanning usually give important information about the source inside an device under test. In this paper, we develop a postprocessing technique, including standard-deviation-based method, principal component analysis, and K -means method, so that the electromagnetic patterns in near field scanning can be extracted fast and grouped automatically and efficiently. The postprocessing techniques are applied to experimental near-field scanning of ICs, such as a microcontroller unit (MCU) and a field programmable gate array (FPGA). The grouping on the electromagnetic patterns of the MCU is in good agreement with the published grouping result, and the grouping on the electromagnetic patterns of the FPGA can find out the additional cluster responsible for additional circuit.

In this paper, the radiated emission of a microcontroller integrated circuit is investigated by rotating the test board in a transverse electromagnetic (TEM) cell measurement. The dependence of the radiated emission on the angle of rotation is derived on the basis of the coupling between a microstrip line and the TEM cell, and then validated by the multiple-orientation TEM cell measurements in a quantitative accuracy of fitting. With the validated dependence, the radiated emissions contributed by electric and magnetic coupling are extracted. The extracted emissions are found in agreement with the measurement result by near-field scanning experiments.

With the trend of miniature, high-integrated assembly modules are common in modern industry. The measurement of the flowing current and voltage on a trace is basic for diagnosis and monitoring of these modules. The traditional contact detection method is not practical especially in conditions of high power and small space. In this paper, we demonstrate a novel method for collocated and simultaneous measurements of radio frequency current and voltage on a trace in a noncontact and movable manner. The measurements are achieved by using a compact probe with both voltage and current detectors, as well as an algorithm based on the transfer functions quantifying the capacitive and inductive couplings between the detectors and the tested trace. The proposed method is verified and applied for continuous power measurements, collocated and simultaneous measurements of transient voltage and current pulses and the dynamic voltage and current of a switching device.

A near-field scanning is usually time-consuming to map the electromagnetic field along the surface of a device. In this communication, a dual probe is proposed with a U-shaped loop to sense radio frequency (RF) magnetic and electric fields simultaneously, so that the one-time scanning by the dual probe can replace the two-time scanning by single-detector probes. Different from the traditional near-field scanning by using a single-detector probe and spectrum analyzer, the proposed scanning can be achieved by the two-output probe and a two-port vector network analyzer connecting to the probe. The efficient near-field scanning measurements of the electric and magnetic field on a conductor-backed coplanar waveguide transmission line and an RF power divider by using the dual probe are in agreement with those by using two single-detector probes.

In this paper, we study the orientation effect of magnetic and electric field-to-line coupling (FtLC) between a microstrip line and a TEM cell by using a square-shaped transmission line pulse as an interference source. With the detections at enough orientations, the electric and magnetic FtLCs can be extracted with high accuracy. It is found that in the TEM cell, the ratio of electric to maximum magnetic FtLC is dominated by the characteristic impedance of the studied microstrip line due to the determined value of width-to-distance. For a certain ratio of electric to maximum magnetic FtLC, there is a singular angle at which the microstrip line gives no response for any electromagnetic interference excitation. Meanwhile, at the supplementary angle, the response of the microstrip line shows no dependence on the termination load.

Electromigration was characterized at the cathode Cu/solder interface&mdash, without the effect of Joule heating&mdash, by employing scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) analyses. Rapid (Cux,Ni1&minus, x)6Sn5 intermetallic compound (IMC) growth was observed at the anomalous region at the cathode end due to the effect of current crowding. The abnormal isotropic diffusion and parallel distribution of Pb were characterized in an ultra-low temperature environment in a monocrystalline structure stressed at &minus, 196 &deg, C. The interesting results were attributed to crystallographic transformation due to the simultaneous effect of cryogenic and electrical stressing. The diffusion behavior of Pb atoms in face-centered cubic lattices performed isomorphism. As a result, Pb atoms of the bump gathered at the high-energy grain boundaries by diffusing through the face-centered cubic lattices around the long grain boundary, eventually forming a long-range distribution and accumulation of Pb elements. Our study may provide understanding of cryogenic electromigration evolution of the Cu/solder interface and provide visual data for abnormal lattice transformation at the current stressing.

Lithium sulfur (Li-S) batteries are very promising electrochemical storage system due to their high gravimetric energy density and low cost. Enormous efforts have been put on Li-S battery to achieve its commercialization. The function of electrolyte is a key issue in achieving the high performance of Li-S system, and several additives have been tried. But very few works have been working on the electrolyte optimization method with the consideration of over-all performance, including cycling stability, rate capability, especially self-discharge prevention ability, and the consideration of loading condition. In this work, we focus on the incorporation of room temperature ionic liquid (IL) as co-solvent, and the effect of IL in mitigating the polysulfide dissolution via systematical mechanism study of self-discharge phenomena. Moreover, the optimization of IL incorporation ratio is discussed for the sake of the better over-all electrochemical performance of Li-S cell by considering cycling stability, rate performance and self-discharge prevention ability, which is found to vary with loading condition. The improved understanding of the effect of IL on battery performance will help the development of electrolyte for Li-S batteries.

In this paper, we change terminal loads of a microstrip line to separate electric field coupling and magnetic field coupling between a microstrip line and a transverse electromagnetic (TEM) cell during radiated emission measurement. Such separation can also be validated by another terminal load. After validation, the effect of termination on both couplings is investigated, and the requirements of termination impedance to suppress the two couplings are revealed. In addition, we find that the linear physical models deriving both lumped coupling parameters only hold below a limited frequency.

The polarity effect of electromigration on the interfacial reactions of micro ball grid array (μBGA) solder joints was studied in terms of microstructural evolution. A dummy μBGA package with the same pair of solder joints was used to obtain reproducible results for a practical application. The μBGA package with Ni(P)/SnPb/Ni(P) structure showed a polarity effect on intermetallic compound (IMC) formation after stress by a current density of 3.0 × 10 3 A cm −2 at 120 °C, compared to the no-current case. Electric current enhanced the growth of Ni 3 Sn 4 at the anode and retarded it at the cathode because of the change in Sn diffusion induced by electromigration. The IMC growth at the anode was about one order of magnitude faster than that at cathode. The growth of IMC at the anode had a parabolic dependence on time since the square of thickness of IMC increases linearly with time. The real μBGA package has unique and more complicated geometry compared to ordinary diffusion couples. So not only the polarity growth of IMC but also the fast dissolution of Cu and Ni at specific positions was found with the μBGA package. The unique geometry of μBGA solder joints caused heat generation at the upside interfaces due to Joule heating. Because of the heat generation and the high interfacial energy at the triple point of upside interfaces, the electroless Ni(P) finishes and Cu trace are consumed rapidly in the region where the current is crowded. Thus electromigration induced the rapid dissolution of Ni and Cu into solder and then formed (Cu,Ni) 6 Sn 5 at the triple point of the current crowding region at high temperature. This is a rapid failure process because the localized fast dissolution of Ni and Cu accelerated the solid-state reaction between solder and electroless Ni(P) or Cu trace.

With the increase demand of high power, high efficient and good beam quality solidstate lasers, thermal management become more important for the lasers. Thermal resistance between laser crystal and heat sink can be effectively reduced by soldering technology, but the technology might induce huge heat stress. In order to solve the problem, finite-element method was used to analysis the stress and thermal resistance. Moreover, a practicable structure was also designed and calculated in this study. Keywords-lasers crystal rod; thermal stress; thermal resistance; Soldering technology