1. Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
- Author
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Q. S. Zhu, Zg G. Wang, Cm M. Li, X. L. Liu, Xq Q. Xu, Xw W. Zhang, S. Y. Yang, Jixue Wang, H.Y. Wei, Jm M. Liu, and Ym M. Fan
- Subjects
X-ray photoelectron spectroscopy ,Materials science ,Indium nitride ,Analytical chemistry ,Nanochemistry ,Band offset ,chemistry.chemical_compound ,Materials Science(all) ,lcsh:TA401-492 ,Nanotechnology ,General Materials Science ,Spectroscopy ,Chemistry/Food Science, general ,X ray photoemission ,w-InN/h-BN heterojunction ,Nano Express ,Material Science ,Engineering, General ,Materials Science, general ,Heterojunction ,Valence band offset ,Condensed Matter Physics ,Physics, General ,chemistry ,Valence band ,Conduction band offset ,Molecular Medicine ,lcsh:Materials of engineering and construction. Mechanics of materials - Abstract
X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.
- Published
- 2010