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This paper describes the characterization of the quantum anomalous Hall (QAH) effect resistor with Chromium-doped Bismuth Antimony Telluride with the efforts in coupling directly to a programmable Josephson voltage standard (PJVS) at zero magnetic field. The precision measurement of the QAH resistance was performed under the presence of microwave signal biased to the PJVS. Understanding such effect will help to improve the experimental set-up for integrating multiple quantum electrical standards in a single system.

The dynamics of a swinging payload suspended from a stationary crane, an unwanted phenomenon on a construction site, can be described as a simple pendulum. However, an experienced crane operator can deliver a swinging payload and have it stop dead on target in a finite amount of time by carefully modulating the speed of the trolley. Generally, a series of precisely timed stop and go movements of the trolley are implemented to damp out the kinetic energy of the simple harmonic oscillator. Here, this mysterious crane operator's trick will be revealed and ultimately generalized to capture the case where the load is initially swinging. Finally, this modus operandi is applied to a torsion balance used to measure G , the universal gravitational constant responsible for the swinging of the crane's payload in the first place.

We report the 2018 self-consistent values of constants and conversion factors of physics and chemistry recommended by the Committee on Data of the International Science Council. The recommended values can also be found at physics.nist.gov/constants. The values are based on a least-squares adjustment that takes into account all theoretical and experimental data available through 31 December 2018. A discussion of the major improvements as well as inconsistencies within the data is given. The former include a decrease in the uncertainty of the dimensionless fine-structure constant and a nearly two orders of magnitude improvement of particle masses expressed in units of kg due to the transition to the revised International System of Units (SI) with an exact value for the Planck constant. Further, because the elementary charge, Boltzmann constant, and Avogadro constant also have exact values in the revised SI, many other constants are either exact or have significantly reduced uncertainties. Inconsistencies remain for the gravitational constant and the muon magnetic-moment anomaly. The proton charge radius puzzle has been partially resolved by improved measurements of hydrogen energy levels.

Precision quantum Hall resistance measurements can be greatly improved when implementing new electrical contact geometries made from superconducting NbTiN. The sample designs described here minimize undesired resistances at contacts and interconnections, enabling further enhancement of device size and complexity when pursuing next-generation quantized Hall resistance devices.

This work presents one solution for long-term storage of epitaxial graphene (EG) in air, namely through the functionalization of millimeter-scale devices with chromium tricarbonyl - Cr(CO) 3 . The carrier density may be tuned reproducibly by annealing below 400 K due to the presence of Cr(CO) 3 . All tuning is easily reversible with exposure to air, with the idle, in-air, carrier density always being close to the Dirac point. Precision measurements in the quantum Hall regime indicate no detrimental effects from the treatment, validating the pursuit of developing air-stable EG-based QHR devices.

A graphene quantized Hall resistance (QHR) device fabricated at the National Institute of Standards and Technology (NIST) was measured alongside a GaAs QHR device fabricated by the National Research Council of Canada (NRC) by comparing them to a 1 kΩ standard resistor using a cryogenic current comparator. The two devices were mounted in a custom developed dual probe that was then assessed for its viability as a suitable apparatus for precision measurements. The charge carrier density of the graphene device exhibited controllable tunability when annealed after Cr(CO) 3 functionalization. These initial measurement results suggest that making resistance comparisons is possible with a single probe wired for two types of quantum standards - GaAs, the established material, and graphene, the newer material that may promote the development of more user-friendly equipment.

The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work, we performed growths of alloyed crystals with stoichiometric compositions between pure forms of NbSe 2 and WSe 2 , followed by an optical analysis of those alloys by utilizing Raman spectroscopy and spectroscopic ellipsometry.

In this paper, we show that quantum Hall resistance measurements using two terminals may be as precise as four-terminal measurements when applying superconducting split contacts. The described sample designs eliminate resistance contributions of terminals and contacts such that the size and complexity of next-generation quantized Hall resistance devices can be significantly improved.

We discuss how the impending redefinition of the SI system of units might affect the ability of students to understand the link between the units and the new system. The redefinition will no longer define a set of base units, but rather a set of constants of nature, such as the elementary charge, e . We point out that this list of constants need not be the only way to introduce students to the subject, either in class or in textbooks. We suggest an alternative way to introduce high school and undergraduate students to the redefined SI, by suggesting a list of experiments for some units; this list would be completely compatible with the redefined SI, and would have all of the same scientific and technological advantages. We demonstrate by questionnaire results that this alternative is more appealing to students. We hope to spur a discussion amongst teachers regarding this important topic for high school and undergraduate physics courses.

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant [Formula: see text] with a relative uncertainty of 10 -7 . After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.

The information provided in this data article will cover the growth parameters for monolayer, epitaxial graphene, as well as how to verify the layer homogeneity by confocal laser scanning and optical microscopy. The characterization of the subsequently fabricated quantum Hall device is shown for example cases during a series of environmental exposures. Quantum Hall data acquired from a CYTOP encapsulation is also provided. Data from Raman spectroscopy, atomic force microscopy, and other electrical property trends are shown. Lastly, quantum Hall effect data are presented from devices with deposited Parylene C films measuring 10.7 μm and 720 nm. All data are relevant for Rigosi et al. [1].

Two-dimensional (2D) materials such as graphene have become the focus of extensive research efforts in condensed matter physics. They provide opportunities for both fundamental research and applications across a wide range of industries. Ideally, characterization of graphene requires non-invasive techniques with single-atomic-layer thickness resolution and nanometer lateral resolution. Moreover, commercial application of graphene requires fast and large-area scanning capability. We demonstrate the optimized balance of image resolution and acquisition time of non-invasive confocal laser scanning microscopy (CLSM), rendering it an indispensable tool for rapid analysis of mass-produced graphene. It is powerful for analysis of 1-5 layers of exfoliated graphene on Si/SiO 2 , and allows us to distinguish the interfacial layer and 1-3 layers of epitaxial graphene on SiC substrates. Furthermore, CLSM shows excellent correlation with conventional optical microscopy, atomic force microscopy, Kelvin probe force microscopy, conductive atomic force microscopy, scanning electron microscopy and Raman mapping.

We report the performance of a quantum Hall resistance standard based on epitaxial graphene maintained in a 5-T tabletop cryocooler system. This quantum resistance standard requires no liquid helium and can operate continuously, allowing year-round accessibility to quantized Hall resistance measurements. The ν = 2 plateau, with a value of R K /2, also seen as R H , is used to scale to 1 kΩ using a binary cryogenic current comparator (BCCC) bridge and a direct current comparator (DCC) bridge. The uncertainties achieved with the BCCC are such as those obtained in the state-of-the-art measurements using GaAs-based devices. BCCC scaling methods can achieve large resistance ratios of 100 or more, and while room temperature DCC bridges have smaller ratios and lower current sensitivity, they can still provide alternate resistance scaling paths without the need for cryogens and superconducting electronics. Estimates of the relative uncertainties of the possible scaling methods are provided in this report, along with a discussion of the advantages of several scaling paths. The tabletop system limits are addressed as are potential solutions for using graphene standards at higher currents.

Homogeneous monolayer epitaxial graphene (EG) is an ideal candidate for the development of millimeter-sized devices with single-crystal domains. A clean fabrication process was used to produce EG-based devices, with n-type doping level of the order of 10 12 cm -2 . Generally, electrical properties of EG, such as longitudinal resistivity, remain unstable when devices are exposed to air due to adsorption of molecular dopants, whose presence shifts the carrier density close to the Dirac point (<10 10 cm -2 ) or into the p-type regime. Here, we report experimental results on the use of amorphous boron nitride (a-BN) as an encapsulation layer, whereby EG can maintain its longitudinal resistivity and have its carrier density modulated. Furthermore, we exposed 12 devices to controlled temperatures of up to 85 °C and relative humidity of up to 85% and reported that an approximately 20 nm a-BN encapsulation thickness is sufficient to preserve their longitudinal resistivity to within 10% of the previously measured value. We monitored the electronic properties of our encapsulated and nonencapsulated EG samples by magnetotransport measurements, using a neodymium iron boron magnet. Our results have essential importance in the mass production of millimeter-scale graphene devices, with stable electrical properties.

The NIST watt balance experiment is being completely rebuilt after its 1998 determination of the Planck constant. That measurement yielded a result with an approximately 1×10(-7) relative standard uncertainty. Because the goal of the new incarnation of the experiment is a ten-fold decrease in uncertainty, it has been necessary to reexamine many sources of systematic error. Hysteresis effects account for a substantial portion of the projected uncertainty budget. They arise from mechanical, magnetic, and thermal sources. The new experiment incorporates several improvements in the apparatus to address these issues, including stiffer components for transferring the mass standard on and off the balance, better servo control of the balance, better pivot materials, and the incorporation of erasing techniques into the mass transfer servo system. We have carried out a series of tests of hysteresis sources on a separate system, and apply their results to the watt apparatus. The studies presented here suggest that our improvements can be expected to reduce hysteresis signals by at least a factor of 10-perhaps as much as a factor of 50-over the 1998 experiment.