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Plasma-assisted atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of Tdep = 50–400°C on Si(100). H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The ALD growth process and material properties were characterized in detail. Ultrashort precursor doses (~50 ms) were found to be sufficient to reach self-limiting ALD growth with a growth-per-cycle of ~1.2 Å (Tdep = ~200°C) leading to SiO2 films with O/Si ratio of ~2.1. Moreover, the plasma ALD process led to a high conformality (95–100%) for trenches with aspect ratios of ~30. In addition, the electronic (interface) properties of ultrathin ALD SiO2 films and ALD SiO2/Al2O3 stacks were studied by capacitance-voltage and photoconductance decay measurements. The interface quality associated with SiO2 was improved significantly by using an ultrathin ALD Al2O3 capping layer and annealing. The interface defect densities decreased from ~1×1012 eV-1 cm-2 (at mid gap) for single layer SiO2 to <1011 eV-1 cm-2 for the stacks. Correspondingly, ultralow surface recombination velocities <3 cm/s were obtained for n-type Si. The density and polarity of the fixed charges associated with the stacks were found to be critically dependent on the SiO2 thickness (1–30 nm).

Differences in Si surface passivation by aluminum oxide (Al2O3) films synthesized using H2O and O3-based thermal atomic layer deposition (ALD) and plasma ALD have been revealed. A low interface defect density of Dit=~1011 eV-1 cm-2 was obtained after annealing, independent of the oxidant. This low Dit was found to be vital for the passivation performance. Field-effect passivation was less prominent for H2O-based ALD Al2O3 before and after annealing, whereas for as-deposited ALD films with an O2 plasma or O3 as the oxidants, the field-effect passivation was impaired by a very high Dit.

Differences in Si surface passivation by aluminum oxide (Al2O3) films synthesized using H2O and O3-based thermal atomic layer deposition (ALD) and plasma ALD have been revealed. A low interface defect density of Dit=~1011 eV-1 cm-2 was obtained after annealing, independent of the oxidant. This low Dit was found to be vital for the passivation performance. Field-effect passivation was less prominent for H2O-based ALD Al2O3 before and after annealing, whereas for as-deposited ALD films with an O2 plasma or O3 as the oxidants, the field-effect passivation was impaired by a very high Dit.

This article describes a novel CVD process for TiN films developed in a 300 mm Vertical Furnace. We have solved Chlorine incorporation at low temperature inside the TiN layer while at the same time the batch process yields a 3 times higher throughput per dual reactor system compared to a single wafer system with 3 chambers.We show process results for load sizes ranging from 5 to as much as 100 wafers that prove filler wafers are only required to a minimum. Applications of the developed TiN process in Metal-Insulator-Metal memory devices such as Deep Trench DRAM, Stack DRAM, as well as Control Electrodes in Charge trapping Flash memory., Delft University of Technology

This article describes a novel CVD process for TiN films developed in a 300 mm Vertical Furnace. We have solved Chlorine incorporation at low temperature inside the TiN layer while at the same time the batch process yields a 3 times higher throughput per dual reactor system compared to a single wafer system with 3 chambers.We show process results for load sizes ranging from 5 to as much as 100 wafers that prove filler wafers are only required to a minimum. Applications of the developed TiN process in Metal-Insulator-Metal memory devices such as Deep Trench DRAM, Stack DRAM, as well as Control Electrodes in Charge trapping Flash memory., Delft University of Technology

Delft University of Technology

Delft University of Technology