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13 results on '"Stephanie Rennesson"'

1. Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy

Author

Jesús Zúñiga-Pérez, Fabrice Semond, Stephanie Rennesson, M. Nemoz, Gilles Patriarche, Mathieu Leroux, Sophie Bouchoule, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)

Subjects
A1. High resolution X-ray diffraction, Materials science, Silicon, B2. Semiconducting III-V materials, Annealing (metallurgy), Superlattice, A3. Molecular beam epitaxy, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Nitride, 01 natural sciences, B1. Nitrides, 0103 physical sciences, Scanning transmission electron microscopy, General Materials Science, Electrical and Electronic Engineering, Diffusion (business), 010302 applied physics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Dark field microscopy, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], A1. Diffusion, 0210 nano-technology, Molecular beam epitaxy
Abstract

International audience; Diffusion at the AlN/Al0.3Ga0.7N interface was investigated by X-ray diffraction, high-angle annular dark field scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy. AlN/Al0.3Ga0.7N superlattices (SLs) have been grown at 800 °C on (111) silicon substrates by ammoniaassisted molecular beam epitaxy. Annealings on a 5-pair SL, carried out at the growth temperature in an ammonia-based atmosphere from 1h to 115h, show the occurrence of a diffusion process illustrated by the increase of the interface layer thickness. The cation interdiffusion is found to be weakly concentration-dependent while it seems to be more strain-dependent. The mean diffusion coefficient value determined in this study at the AlN/Al0.3Ga0.7N interface is about 6⨯10-18 cm 2 /s at the growth temperature. The effect of the unintentional annealing of buried layers during long growth runs is exemplified on a 45-pair SL. The measurement of the actual composition profile along the growth direction shows the formation of an unintentional AlGaN graded layer of intermediate composition at each interface. The thickness of each of these interfacial layers is found to decrease along the SL growth direction, pointing towards the influence of the overall time spent at growth temperature as a determining parameter.

Published
2021
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2. Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength

Author

Thierry Guillet, Pierre Disseix, Blandine Alloing, Laetitia Doyennette, Edmond Cambril, Jesús Zúñiga-Pérez, M. Gromovyi, Stephanie Rennesson, G. Kreyder, F. Médard, Fabrice Semond, Joël Leymarie, Sophie Bouchoule, François Réveret, and Christelle Brimont

Subjects
Coupling, Physics, Photon, Condensed matter physics, Exciton, Physics::Optics, General Physics and Astronomy, 02 engineering and technology, Dielectric, Exciton-polaritons, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, law, Ellipsometry, 0103 physical sciences, Polariton, 010306 general physics, 0210 nano-technology, Waveguide
Abstract

We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T = 6 to 300 K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong-coupling regime. We prove that the guided photons and excitons are strongly coupled at all investigated temperatures, with a small (11%) dependence on the temperature. However, the values of the Rabi splitting strongly vary among the four models: the "coupled oscillator" model overestimates the coupling; the analytical "Elliott-Tanguy" model precisely describes the dielectric susceptibility of GaN near the excitonic transition, leading to a Rabi splitting equal to 82 ± 10 meV for fundamental transverse-electric mode; the experimental ellipsometry-based model leads to smaller values of 55 ± 6 meV. We evidence that, for waveguides including active layers with large oscillator strengths, as required for room-temperature polaritonic devices, a strong bending of the modes' dispersion is not necessarily the signature of the strong coupling, which requires for its reliable assessment a precise analysis of the material dielectric susceptibility.

Published
2020
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3. Blue Microlasers Integrated on a Photonic Platform on Silicon

Author

Jean-Yves Duboz, Xavier Checoury, Christelle Brimont, Benjamin Damilano, Fabrice Semond, Philippe Boucaud, Farsane Tabataba-Vakili, Thierry Guillet, Moustafa El Kurdi, Stephanie Rennesson, Sébastien Sauvage, Eric Frayssinet, Iännis Roland, Laetitia Doyennette, Bruno Gayral, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), ANR Quanonic, ANR Milagan, Labex Ganex, ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)

Subjects
Materials science, Nanophotonics, FOS: Physical sciences, Physics::Optics, Applied Physics (physics.app-ph), 02 engineering and technology, Grating, 01 natural sciences, law.invention, 010309 optics, law, 0103 physical sciences, Electrical and Electronic Engineering, Quantum well, business.industry, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Optoelectronics, Whispering-gallery wave, Photonics, 0210 nano-technology, business, Waveguide, Lasing threshold, Biotechnology
Abstract

International audience; The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides, and the coupled emission is guided and outcoupled to free space using grating couplers. A small gap size of less than 100 nm between the disk and the waveguide is required in the blue spectral range for optimal evanescent coupling. To avoid reabsorption of the microdisk emission in the waveguide, the quantum wells are etched away from the waveguide. Under continuous-wave excitation, loaded quality factors greater than 2000 are observed for the whispering gallery modes for devices with small gaps and large waveguide bending angles. Under pulsed excitation conditions, lasing is evidenced for 3 μm diameter microdisks integrated in a full photonic circuit. We thus present a first demonstration of a III-nitride microlaser coupled to a nanophotonic circuit.

Published
2018
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4. Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Author

Benjamin Damilano, Christelle Brimont, Stephanie Rennesson, Sébastien Sauvage, Thierry Guillet, Moustafa El Kurdi, Xavier Checoury, Fabrice Semond, Philippe Boucaud, Jean-Yves Duboz, Farsane Tabataba-Vakili, Eric Frayssinet, Laetitia Doyennette, Bruno Gayral, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), and ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017)

Subjects
Materials science, Silicon, lcsh:Medicine, FOS: Physical sciences, chemistry.chemical_element, Physics::Optics, Applied Physics (physics.app-ph), 02 engineering and technology, Nitride, 7. Clean energy, 01 natural sciences, Article, 010309 optics, 0103 physical sciences, Lasers, LEDs and light sources, Spontaneous emission, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], lcsh:Science, Electronic circuit, Semiconductor lasers, Coupling, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Multidisciplinary, business.industry, lcsh:R, Physics - Applied Physics, 021001 nanoscience & nanotechnology, 3. Good health, Microresonators, Optics and photonics, chemistry, Optoelectronics, lcsh:Q, Photonics, Whispering-gallery wave, 0210 nano-technology, business, Lasing threshold, Physics - Optics, Optics (physics.optics)
Abstract

On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase matching, i.e. the most efficient energy transfer scheme, for very short gap sizes and thin waveguides (g = 45 nm and w = 170 nm) in the spontaneous emission regime. Whispering gallery mode lasing is demonstrated for a wide range of parameters with a strong dependence of the threshold on the loaded quality factor. We show the dependence and high sensitivity of the output signal on the coupling. Lastly, we observe the impact of processing on the tuning of mode resonances due to the very short coupling distances. Such small footprint on-chip integrated microlasers providing maximum energy transfer into a photonic circuit have important potential applications for visible-light communication and lab-on-chip bio-sensors., Comment: 10 pages, 6 figures, supplementary: 6 pages, 8 figures

Published
2019
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5. III-nitride on silicon electrically injected microrings for nanophotonic circuits

Author

Stephanie Rennesson, Sébastien Sauvage, Philippe Boucaud, Benjamin Damilano, Thierry Guillet, Fabrice Semond, Bruno Gayral, Xavier Checoury, Farsane Tabataba-Vakili, Moustafa El Kurdi, Christelle Brimont, Laetitia Doyennette, Iännis Roland, Jean-Yves Duboz, Eric Frayssinet, Raffaele Colombelli, Bruno Paulillo, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Nice Sophia Antipolis (1965 - 2019) (UNS), and ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017)

Subjects
Materials science, Silicon, Nanophotonics, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, Applied Physics (physics.app-ph), Electroluminescence, 01 natural sciences, 010309 optics, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electronic circuit, Power density, business.industry, Direct current, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, chemistry, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Optoelectronics, Photonics, 0210 nano-technology, business, Lasing threshold
Abstract

International audience; Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm 2 output power density at 20 mA from such microrings with diameters of 30 to 50 µm. The first steps towards achieving an integrated photonic circuit are demonstrated.

Published
2019
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6. Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

Author

Jean-Yves Duboz, Xavier Checoury, Fabrice Semond, Moustafa El Kurdi, Thierry Guillet, Philippe Boucaud, Iännis Roland, Stephanie Rennesson, Sébastien Sauvage, Farsane Tabataba-Vakili, Christelle Brimont, Bruno Gayral, Thi-Mo Tran, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), ANR-11-IDEX-0003,IPS,Idex Paris-Saclay(2011), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, and Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
010302 applied physics, Materials science, Silicon photonics, Physics and Astronomy (miscellaneous), Silicon, business.industry, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, Physics - Applied Physics, Applied Physics (physics.app-ph), Nitride, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystal, chemistry, Q factor, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Absorption (electromagnetic radiation), Quantum well, Photonic crystal
Abstract

International audience; III-nitride-on-silicon L3 and H2 photonic crystal cavities with resonances down to 315 nm and quality factors up to 1085 at 337 nm have been demonstrated. The reduction of quality factor (Q) with decreasing wavelength is investigated. Besides the QW absorption below 340 nm a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 250 at 300 nm when no active layer is present.

Published
2019
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7. A universal description of III-V/Si epitaxial growth processes

Author

Maxime Vallet, Stephanie Rennesson, Nicolas Bertru, Fabrice Semond, Laurent Pedesseau, Simon Charbonnier, Pascal Turban, Eric Tournié, A. Le Corre, Gilles Patriarche, Jean-Baptiste Rodriguez, Charles Cornet, Anne Ponchet, Antoine Létoublon, Rozenn Bernard, Ludovic Largeau, Ida Lucci, Laurent Cerutti, Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Surfaces, Interfaces et Nano-Objets (CEMES-SINanO), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Region Bretagne, ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014), ANR-17-CE24-0019,ORPHEUS,Phénomènes optiques du second ordre dans les microdisques de phosphure de gallium intégrés sur silicium(2017), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
010302 applied physics, [PHYS]Physics [physics], Condensed Matter - Materials Science, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Crystal growth, 02 engineering and technology, Strain relief, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, 0103 physical sciences, Microscopy, General Materials Science, Wetting, 0210 nano-technology
Abstract

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation., includes the manuscript file and the supplemental materials

Published
2018
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8. III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Author

Thierry Guillet, Iännis Roland, Julien Selles, M. El Kurdi, V. Crepel, Benjamin Damilano, Fabrice Semond, Philippe Boucaud, Bruno Gayral, Meletios Mexis, Xavier Checoury, Stephanie Rennesson, Christelle Brimont, Mathieu Leroux, Matière et Systèmes Complexes (MSC (UMR_7057)), Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), Université Côte d'Azur (UCA)-Université Côte d'Azur (UCA)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), Centre National de la Recherche Scientifique (CNRS)-Université Paris Diderot - Paris 7 (UPD7), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Matière et Systèmes Complexes (MSC), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Physics::Optics, 02 engineering and technology, 7. Clean energy, 01 natural sciences, law.invention, Optical pumping, Resonator, Condensed Matter::Materials Science, Optics, law, 0103 physical sciences, 010302 applied physics, business.industry, Quantum-confined Stark effect, Wide-bandgap semiconductor, 021001 nanoscience & nanotechnology, Laser, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Optoelectronics, Photonics, 0210 nano-technology, business, Ternary operation, Lasing threshold
Abstract

We present a series of microdisk lasers realized within the same GaN-on-Si photonic platform scheme, and operating at room temperature under pulsed optical pumping over a broad spectral range extending over λ = 275 nm–470 nm. The III-nitride microdisks embed either binary GaN/AlN multiple quantum wells (MQWs) for UV operation, or ternary InGaN/GaN MQWs for violet and blue operation. This demonstrates the versatility of this nitride-on-silicon platform, and the realization on this platform of efficient active layers for lasing action over a 200 nm broad UV to visible spectral range. We probe the lasing threshold carrier density over the whole spectral range and found that it is similar whatever the emission wavelength for these Q > 1000 microdisk resonators with a constant material quality until quantum confined Stark effect takes over. The threshold is also found independent of microdisk diameters from 3 to 12 μm, with a β factor intermediate between the one of vertical cavity lasers and the one of small modal volume “thresholdless” lasers.

Published
2016
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9. Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Author

Guy Feuillet, Fatih Akyol, Tomas Palacios, Hubert Renevier, Markus R. Wagner, Sergio Fernández-Garrido, Juan Sebastián Reparaz, Oliver Brandt, Stephanie Rennesson, Stacia Keller, Liverios Lymperakis, Achim Trampert, Karine Hestroffer, Siddharth Rajan, Jesús Zúñiga-Pérez, Xiang Kong, Vincent Consonni, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Paul-Drude-Institut für Festkörperelektronik (PDI), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Service de Physique des Matériaux et des Microstructures, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Nice Sophia Antipolis (... - 2019) (UNS), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Nanostructure, Materials science, Nanowire, Nucleation, General Physics and Astronomy, 02 engineering and technology, 01 natural sciences, GaN, 0103 physical sciences, polarity, ddc:530, Thin film, ComputingMilieux_MISCELLANEOUS, Wurtzite crystal structure, 010302 applied physics, polarization, business.industry, Wide-bandgap semiconductor, zinc oxide, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, 530 Physik, Polarization density, Nanolithography, ZnO, Optoelectronics, 0210 nano-technology, business, gallium nitride
Abstract

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev. 3, 041303 (2016) and may be found at https://doi.org/10.1063/1.4963919., The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.

Published
2016
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10. Opto-electrical characterization of infrared sensors based on carbon nanotube films

Author

Riad Haïdar, Sylvain Maine, Brigitte Trétout, Jean-Luc Pelouard, Charlie Koechlin, Stephanie Rennesson, and Annick Loiseau

Subjects
Materials science, business.industry, Infrared, Contact resistance, Bolometer, General Engineering, Energy Engineering and Power Technology, Nanotechnology, Carbon nanotube, law.invention, Optical properties of carbon nanotubes, law, Dispersion (optics), Optoelectronics, business, Absorption (electromagnetic radiation), Sheet resistance
Abstract

A large array of devices based on a carbon nanotubes film was realized. Electrical characterization by the transfer length method enables the determination of the sheet resistance, and contact resistance, which is extremely low. The resistance dispersion is shown to be due to the film non-uniformity, and is low enough to enable the realization of bolometer focal plane arrays. A decrease of the resistance with the temperature is observed and leads to a TCR of − 0.2 % K − 1 . The strong absorption of carbon nanotubes films in the mid infrared transmission band (3–5 μm and of 8–14 μm) enables us to demonstrate the first carbon nanotubes photo response for these wavelengths.

Published
2010
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11. Laser damage of free-standing nanometer membranes

Author

Philippe Boucaud, Peter Baum, Stephanie Rennesson, Fabrice Semond, Iännis Roland, and Yuya Morimoto

Subjects
Materials science, Band gap, business.industry, Attosecond, Ultrafast electron diffraction, General Physics and Astronomy, Laser, 01 natural sciences, law.invention, 010309 optics, Membrane, law, Ionization, 0103 physical sciences, Microscopy, Optoelectronics, ddc:530, Nanometre, 010306 general physics, business
Abstract

Many high-field/attosecond and ultrafast electron diffraction/microscopy experiments on condensed matter require samples in the form of free-standing membranes with nanometer thickness. Here, we report the measurement of the laser-induced damage threshold of 11 different free-standing nanometer-thin membranes of metallic, semiconducting, and insulating materials for 1-ps, 1030-nm laser pulses at 50 kHz repetition rate. We find a laser damage threshold that is very similar to each corresponding bulk material. The measurements also reveal a band gap dependence of the damage threshold as a consequence of different ionization rates. These results establish the suitability of free-standing nanometer membranes for high-field pump-probe experiments. published

Published
2017
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12. Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances

Author

Jean-Claude De Jaeger, Marie Lesecq, M. Chmielowska, Sébastien Chenot, Etienne Okada, Stephanie Rennesson, Virginie Hoel, Yvon Cordier, Nicolas Defrance, F. Lecourt, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, Silicon, chemistry.chemical_element, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, law, Electric field, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, Power density, 010302 applied physics, business.industry, Transistor, Wide-bandgap semiconductor, Heterojunction, 021001 nanoscience & nanotechnology, Polarization (waves), Electronic, Optical and Magnetic Materials, Active layer, chemistry, Optoelectronics, 0210 nano-technology, business
Abstract

In this paper, we propose to optimize Al0.29Ga0.71N/GaN heterostructures on silicon substrate to obtain high electron mobility transistors featuring high-power/frequency performances. The polarization electric fields are engineered by varying the layer thicknesses of the cap and the barrier, and by changing the type of buffer (GaN or AlGaN). The aim of this paper is to find the best tradeoff between the active layer thickness reduction and the achievement of a reasonable drain current to satisfy the requirements for high performances. The optimum heterostructure device presents an output power density of 1.5 W/mm at 40 GHz, among the best reported on silicon substrate.

Published
2013
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13. CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

Author

Marc Portail, Eric Frayssinet, Adrien Michon, Stéphanie Rennesson, Fabrice Semond, Aimeric Courville, Marcin Zielinski, Remi Comyn, Luan Nguyen, Yvon Cordier, and Philippe Vennéguès

Subjects
silicon carbide, aluminum nitride, chemical vapor deposition, epitaxy, Crystallography, QD901-999
Abstract

(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposited on 2H-AlN/Si presented a better structural quality than the 3C-SiC films grown directly on Si(111) using the well-established two-step carbonization–epitaxy process. The good lattice match of 3C-SiC with AlN may open a reliable route towards high-quality thin heteroepitaxial 3C-SiC films on a silicon wafer. Nevertheless, the 3C-SiC was featured by the presence of twinned domains and small inclusions of 6H-SiC. The formation of a thin AlSiN film at the AlN/Si interface is also reported. This is the first time such AlSiN layers are described within an AlN/Si heterostructure. Furthermore, noticeable modifications were observed in the AlN film. First, the growth process of SiC on AlN induced a reduction of the dislocation density in the AlN, attesting to the structural healing of AlN with thermal treatment, as already observed for other AlN-based heterostructures with higher-temperature processes. The growth of SiC on AlN also induced a dramatic reduction in the insulating character of the AlN, which could be related to a noticeable cross-doping between the materials.

Published
2022
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