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Two-dimensional (2D) materials such as graphene, black phosphorus, and transition metal dichalcogenides have attracted significant research attention due to their novel properties and wide range of applications in electronic and optoelectronic devices. In particular, investigation of twist-controlled 2D materials has attracted tremendous attention due to their excellent properties such as smooth heterointerfaces, highly gate-tunable bandgaps, and ultrafast carrier transport. Twist-controlled 2D materials combined with their fascinating electronic structures have also indicated their outstanding potential in electronic and optoelectronic applications. In this review, the recent developments in twisted 2D materials are summarized, covering aspects related to their fabrication, twist angle-dependent optical properties, and optoelectronic applications. The photodetectors and orientation-dependent van der Waals junctions are introduced and discussed systematically. Finally, we deliver a summary and outlook to provide a guideline for the future development of this rapidly growing field.

Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS2, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.

Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS

Vertically stacked devices of two-dimensional layered materials (2DLMs) based on van der Waals heterostructures (vdWHs) have recently attracted considerable attention due to their good properties. A tunneling structure is presented in this paper that, unlike other tunneling structures, has no specific insulating two-dimensional materials, such as boron nitride. The tunneling structure is comprised of graphene and black phosphorus. Black phosphorus is chemically active, and can be easily oxidized in the air to form an insulating layer. A tunneling device was produced based on this characteristic of black phosphorus. The insulation layer was an oxide layer formed by the oxidation of black phosphorus. The structure takes advantage of the easy oxidation ability of black phosphorus. The presence of a black phosphorus oxide layer was determined by XPS analysis. The tunneling characteristics of the overlay structure were determined by measuring the current-voltage (Id-V) curve of the device. Simulation studies showed that the oxidation layer was responsible for the tunneling effect. Compared with other black phosphorus devices, the photoelectric properties of the proposed device were greatly improved.

To investigate the antihepatocellular carcinoma effects of Chi-Shen extract (CSE) from the water-soluble compounds of Salvia miltiorrhiza and Paeoniae radix. The effect of CSE on the growth of HepG2 cells (hepatocellular carcinoma cell line) was studied by 3-(4,5)-2,5-diphenyltetrazolium bromide assay. Apoptosis were detected through acridine orange (AO) and ethylene dibromide (EB) staining and DNA fragmentation assay. The effect of CSE on the cell cycle of HepG2 cells was studied by the propidium iodide staining method. The activation of caspases-3, -8 and -9 was examined by immunoassay kits. The transcription of the Bcl-2 family and p53 was detected by RT-PCR. Our data revealed that CSE strongly induced HepG2 cell death in a dose- and time-dependent manner. CSE-induced cell death was considered to be apoptotic by observing the typical apoptotic morphological change by AO/EB staining and DNA fragmentation assay. The induction of HepG2 cell death was caused by an induction of apoptosis for the sub-G1 proportion increase, the downregulation of Bcl-2, the upregulation of Bax and p53, and the activation of the caspases-3 and -9 pathways. These results clearly demonstrated that CSE was able to inhibit the proliferation of HepG2 cells and cause apoptosis. Moreover, the anticancer effects of CSE were related to the Bcl-2 family pathway and the activation of caspases-3 and -9 in HepG2 cells.