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Natalie Vanden Bon,1 Bart van Grinsven,2 Mohammed Sharif Murib,2 Weng Siang Yeap,2 Ken Haenen,2,3 Ward De Ceuninck,2,3 Patrick Wagner,2,3 Marcel Ameloot,1 Veronique Vermeeren,1 Luc Michiels11Biomedical Research Institute, Hasselt University, Diepenbeek, Belgium; 2Institute for Materials Research, Hasselt University, Diepenbeek, Belgium; 3IMOMEC, Diepenbeek, BelgiumAbstract: Conventional neonatal diagnosis of phenylketonuria is based on the presence of abnormal levels of phenylalanine in the blood. However, for carrier detection and prenatal diagnosis, direct detection of disease-correlated mutations is needed. To speed up and simplify mutation screening in genes, new technologies are developed. In this study, a heat-transfer method is evaluated as a mutation-detection technology in entire exons of the phenylalanine hydroxylase (PAH) gene. This method is based on the change in heat-transfer resistance (Rth) upon thermal denaturation of dsDNA (double-stranded DNA) on nanocrystalline diamond. First, ssDNA (single-stranded DNA) fragments that span the size range of the PAH exons were successfully immobilized on nanocrystalline diamond. Next, it was studied whether an Rth change could be observed during the thermal denaturation of these DNA fragments after hybridization to their complementary counterpart. A clear Rth shift during the denaturation of exon 5, exon 9, and exon 12 dsDNA was observed, corresponding to lengths of up to 123 bp. Finally, Rth was shown to detect prevalent single-nucleotide polymorphisms, c.473G>A (R158Q), c.932T>C (p.L311P), and c.1222C>T (R408W), correlated with phenylketonuria, displaying an effect related to the different melting temperatures of homoduplexes and heteroduplexes.Keywords: mutation detection, heat-transfer resistance, melting temperature, nanocrystalline diamond, persistence length

A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ∼50 ml/min (STP) at ∼850 °C. The films were extensively evaluated by surface wettability, electron affinity, elemental composition, photoconductivity, and redox studies. In addition, electrografting experiments were performed. The surface characteristics as well as the optoelectronic and redox properties of the annealed films were found to be very similar to hydrogen plasma-treated films. Moreover, the presented method is compatible with atmospheric pressure and provides a low-cost solution to hydrogenate CVD diamond, which makes it interesting for industrial applications. The plausible mechanism for the hydrogen termination of CVD diamond films is based on the formation of surface carbon dangling bonds and carbon-carbon unsaturated bonds at the applied tempera-ture, which react with molecular hydrogen to produce a hydrogen-terminated surface. [ABSTRACT FROM AUTHOR]

Time-of-Flight (ToF) experiments were carried out to study the electrical transport and charge trapping properties of oxidized freestanding single crystalline (100) CVD diamond crystals. It is shown that the diamond surface and properties of the electrical contacts are of extreme importance, influencing measured charge carrier mobility values. While sputtered Al contacts yield textbook ToF spectra and electron mobilities μe exceeding 1860 cm2/Vs, thermally deposited contacts suffer from enhanced trapping. We propose a model in which the observed polarization effects can be explained by charge transfer to oxygen-related surface states, which interact with surface adsorbates, according to the well-known transfer-doping model. [ABSTRACT FROM AUTHOR]

The systematics of the suppression of superconductivity with increasing magnetic field in boron-doped nanocrystalline chemical vapor deposition diamond is studied in a broad temperature range. At the temperature of TS0 which is above the critical temperature, a plateau is observed in the resistivity versus temperature curve ρ(T) taken at zero magnetic field. When a magnetic field of B=BSN(N=1,2,...,5) is applied, the plateau moves to low temperature with the thermoresistivity maximum located at TSN (N=1,2,...,5). The ρ(B) curves, measured at different temperatures around TSN, intersect in the ρ-B plane at the field of B=BSN. By tuning BSN from 0 to 5 T, a series of plateaus in the ρ-T plane and the corresponding intersections in the ρ-B plane are observed. The intersections quadratically chain up in the ρ-B plane, separating the superconducting from the insulating region. The thermoresistivity maxima exponentially group up in the ρ-T plane, thus defining a phase fluctuation zone. The phase boundary, composed of the intersections and separating the superconducting states from the insulating state, is shown to be a generic consequence of granularity. [ABSTRACT FROM AUTHOR]

In this work, we investigate the stress developed in phosphorus-doped layers grown on (110)-textured polycrystalline diamond templates. To that end, we follow the shifts of the diamond Raman diffusion and the exciton recombination energies by Raman and cathodoluminescence spectroscopies, respectively. With each approach, a high tensile strain of several gigapascal is evidenced. Moreover, Raman mapping performed in cross section shows (i) at the grain boundaries, a strain in tension that propagates along the growth direction from the template to the deposited layer and (ii) at the center of each grain, a tensile strain of the phosphorus-doped layer with respect to the underlying undoped grain. Concerning the second, we observe also an increase in strain effects at high phosphorus incorporation, together with a structural degradation. The possible origins of such high lattice deformation of phosphorus-doped layers are discussed. [ABSTRACT FROM AUTHOR]

We report on the observation of a negative magnetoresistance (NMR) regime in boron-doped nanocrystalline diamond films at low temperatures. A comparative analysis of our experimental results and those reported for systems composed of superconducting granules embedded in an insulating matrix (also referred as granular films) suggest the presence of superconducting regions inside the insulating films as causing the NMR. By considering the latter scenario, the experimental observations are explained by modeling the systems as consisting of a distribution of superconducting granules whose global properties are tuned by the intergrain distance. [ABSTRACT FROM AUTHOR]

We report the optical property measurements on boron-doped diamond (BDD) films which were synthesized by microwave plasma-assisted chemical vapor deposition technique on Si (100) using methane in high hydrogen dilution and trimethylboron as precursors with varying boron concentration such that [B]/[C]gas=100, 500, 1000, 2000, 4000, and 6467 ppm. These BDD films were investigated using a rotating analyzer variable angle spectroscopic ellipsometry (SE) from the near IR to UV range (830–193 nm). By applying the conventional Bruggeman effective medium approximation and linear regression analyses to the raw SE data that is, [ψ(λi),Δ(λi)] and pseudodielectric function (<[variant_greek_epsilon]r(λi)>,<[variant_greek_epsilon]i(λi)>), we determined the most appropriate model fit. The SE modeling was performed through the normal and point-by-point fit methods combined with the coupled and uncoupled bulk and surface layer approaches providing the details about the thin films’ microstructure in terms of the (a) multilayer (component and surface) structure and component layer thickness of the films, (b)volume fraction of constituents [fsp3 C, fsp2 C and void (fv) in the component layer], (c) inhomogeneity of the structure along the growth axis and its variation with boron concentration, and (iv) surface roughness layer thickness (ds) with dimensions less than the optical wavelength that is not otherwise available. A simplified three-layer structural model consisting of an interfacial layer, an intermediate (or bulk) layer, and a top surface roughness layer has been proposed, which simulates the ellipsometry data reasonably well with coupled point-by-point method. An estimator, i.e., mean squared error (χ2), is used to assess the accuracy of the model fit. The... [ABSTRACT FROM AUTHOR]

The influence of oxidation, hydrogenation, and annealing on the dielectric properties of microwave plasma enhanced chemical vapor deposited diamond films was measured in the 45 MHz-20 GHz range using an open-ended coaxial probe. A dielectric response was detected around 10[sup 8]-10[sup 9] Hz for the hydrogenated samples, in contrast to the oxidized films, which showed no response in that frequency range. The amplitude and position of the detected response were clearly dependent on the sample quality and the state of the surface. Fitting of the experimental data to the Cole-Cole expression for dielectric relaxation showed a near-Debye behavior of the dielectric permittivity. We propose that the dielectric response is a result of two-dimensional plasmons, corresponding with a hole concentration of ∼10[sup 13] cm[sup -2] at the diamond surface, induced by the hydrogen termination. Analogous to the well-known hydrogen-induced surface conductivity, the dielectric signal disappeared after annealing the diamond films at 200 °C. [ABSTRACT FROM AUTHOR]

The article studies the negative magnetoresistance (NMR) regime in boron-doped nanocrystalline diamond films at low temperatures. Findings suggest the presence of superconducting regions inside the insulating films as causing the NMR.

A study of the incorporation efficiency of phosphorus as a function of the surface orientation of grains in (110)-textured polycrystalline chemical vapor deposited diamond is presented. The results from the Cathodoluminescence mapping of the films provides insight into the large local-differences in relative intensities stemming from P-bound and free excitons, and the electron backscattering diffraction mapping shed light on the donor concentration as function of the grain orientation.

The field electron emission (FEE) properties of nitrogen-incorporated nanocrystalline diamond films were enhanced due to Li-ion implantation/annealing processes. Li-ion implantation mainly induced the formation of electron trap centers inside diamond grains, whereas post-annealing healed the defects and converted the a-C phase into nanographite, forming conduction channels for effective transport of electrons. This resulted in a high electrical conductivity of 11.0 S/cm and enhanced FEE performance with a low turn-on field of 10.6 V/µm, a high current density of 25.5 mA/cm² (at 23.2 V/µm), and a high lifetime stability of 1,090 min for nitrogen incorporated nanocrystalline diamond films. [ABSTRACT FROM AUTHOR]

A "patterned-seeding technique" in combination with a "nanodiamond masked reactive ion etching process" is demonstrated for fabricating vertically aligned diamondgraphite hybrid (DGH) nanorod arrays. The DGH nanorod arrays possess superior field electron emission (FEE) behavior with a low turn-on field, long lifetime stability, and large field enhancement factor. Such an enhanced FEE is attributed to the nanocomposite nature of theDGH nanorods, which contain sp2-graphitic phases in the boundaries of nano-sized diamond grains. The simplicity in the nanorod fabrication process renders the DGH nanorods of greater potential for the applications as cathodes in field emission displays and microplasma display devices. [ABSTRACT FROM AUTHOR]

Utilization of Au and nanocrystalline diamond (NCD) as interlayers noticeably modifies the microstructure and field electron emission (FEE) properties of hexagonal boron nitride nanowalls (hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3 V μm−1, attaining FEE current density of 2.58 mA cm−2 and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride (aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability. [ABSTRACT FROM AUTHOR]

The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 lm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μmh-1. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 1016 cm-3 phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications. [ABSTRACT FROM AUTHOR]