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The fabrication process of interdigitated‐back‐contacted silicon heterojunction (IBC‐SHJ) solar cells has been significantly simplified with the development of the so‐called tunnel‐IBC architecture. This architecture utilizes a highly conductive (p)‐type nanocrystalline silicon (nc‐Si:H) layer deposited over the full substrate area comprising pre‐patterned (n)‐type nc‐Si:H fingers. In this context, the (p)‐type nc‐Si:H layer is referred to as blanket layer. As both electrodes are connected to the same blanket layer, the high lateral conductivity of (p)nc‐Si:H layer can potentially lead to relatively low shunt resistance in the device, thus limiting the performance of such solar cells. To overcome such limitation, we introduce a thin (<2 nm) full‐area molybdenum oxide (MoOx) layer as an alternative to the (p)nc‐Si:H blanket layer. We demonstrate that the use of such a thin MoOx minimizes the shunting losses thanks to its low lateral conductivity while preserving the simplified fabrication process. In this process, a novel (n)‐type nc‐Si:H/MoOx electron collection contact stack is implemented within the proposed solar cell architecture. We assess its transport mechanisms via electrical simulations showing that electron transport, unlike in the case of tunnel‐IBC, occurs in the conduction band fully. Moreover, the proposed contact stack is evaluated in terms of contact resistivity and integrated into a proof‐of‐concept front/back‐contacted (FBC) SHJ solar cells. Contact resistivity as low as 100 mΩcm2 is achieved, and fabricated FBC‐SHJ solar cells obtain a fill factor above 81.5% and open‐circuit voltage above 705 mV. Lastly, the IBC‐SHJ solar cells featuring the MoOx blanket layer are fabricated, exhibiting efficiencies up to 21.14% with high shunt resistances above 150 kΩcm2. Further optimizations in terms of layer properties and fabrication process are proposed to improve device performance and realize the efficiency potential of our novel IBC‐SHJ solar cell architecture. [ABSTRACT FROM AUTHOR]

This work presents a practical approach to designing an optical filter for thermal management for photovoltaic modules. The approach emphasizes the practicality of manufacturing over optical performance. Simulation work demonstrates that, for an interdigitated back contact solar cell architecture, complete rejection of infrared radiation offers limited thermal benefits requiring highly complex optical filter designs. An alternative approach consists of reducing thermalization losses by providing reflectance at lower wavelength values. An optical filter design that fulfills this requirement is possible using simple structures based on two materials and taking advantage of the harmonics present in quarter wavelength optical thickness designs. The filter is later optimized for angular performance via second‐order algorithms, resulting in a device consisting of only 15 thin‐film layers. Performance simulations on two locations, Delft (the Netherlands) and Singapore, estimate a temperature reduction of 2.20°C and 2.45°C, respectively. In a single year, the optical loss produced by the filter is not compensated via temperature reduction. However, improvements in the annual degradation rate show that in Singapore, the overall effect of the filter on the lifetime DC energy yield is positive. This work explores the potential use of practical optical filters for thermal management of photovoltaic modules. Aiming for simplified designs, the temperature reduction is achieved by rejecting light at low and high wavelength values, albeit incurring optical losses. Performance simulation results show that the added optical loss is not compensated by the cooling effect. However, this effect can increase the lifetime of a PV module such that in certain locations, the overall performance effect is positive. [ABSTRACT FROM AUTHOR]

Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc‐SiOx:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc‐SiOx:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc‐SiOx:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure. A theoretical analysis of charge carrier transport mechanisms in silicon heterojunction (SHJ) solar cells with wide band gap layers is then presented. Afterwards, the authors focus on the recent developments in the implementation of nc‐SiOx:H and hydrogenated amorphous silicon oxide (a‐SiOx:H) films for SHJ, passivating contacts, and perovskite/silicon tandem devices. [ABSTRACT FROM AUTHOR]

Reducing indium consumption in transparent conductive oxide (TCO) layers is crucial for mass production of silicon heterojunction (SHJ) solar cells. In this contribution, optical simulation‐assisted design and optimization of SHJ solar cells featuring MoOx hole collectors with ultra‐thin TCO layers is performed. Firstly, bifacial SHJ solar cells with MoOx as the hole transport layer (HTL) and three types of n‐contact as electron transport layer (ETL) are fabricated with 50 nm thick ITO on both sides. It is found that bilayer (nc‐Si:H/a‐Si:H) and trilayer (nc‐SiOx:H/nc‐Si:H/a‐Si:H) as n‐contacts performed electronically and optically better than monolayer (a‐Si:H) in bifacial SHJ cells, respectively. Then, as suggested by optical simulations, the same stack of tungsten‐doped indium oxide (IWO) and optimized MgF2 layers are applied on both sides of front/back‐contacted SHJ solar cells. Devices endowed with 10 nm thick IWO and bilayer n‐contact exhibit a certified efficiency of 21.66% and 20.66% when measured from MoOx and n‐contact side, respectively. Specifically, when illuminating from the MoOx side, the short‐circuit current density and the fill factor remain well above 40 mA cm−2 and 77%, respectively. Compared to standard front/rear TCO thicknesses (75 nm/150 nm) deployed in monofacial SHJ solar cells, this represents over 90% TCO reduction. As for bifacial cells featuring 50 nm thick IWO layers, a champion device with a bilayer n‐contact as ETL is obtained, which exhibits certified conversion efficiency of 23.25% and 22.75% when characterized from the MoOx side and the n‐layer side, respectively, with a bifaciality factor of 0.98. In general, by utilizing a n‐type bilayer stack, bifaciality factor is above 0.96 and it can be further enhanced up to 0.99 by switching to a n‐type trilayer stack. Again, compared to the aforementioned standard front/rear TCO thicknesses, this translates to a TCO reduction of more than 67%. [ABSTRACT FROM AUTHOR]

Since single junction c-Si solar cells are reaching their practical efficiency limit. Perovskite/c-Si tandem solar cells hold the promise of achieving greater than 30% efficiencies. In this regard, optical simulations can deliver guidelines for reducing the parasitic absorption losses and increasing the photocurrent density of the tandem solar cells. In this work, an optical study of 2, 3 and 4 terminal perovskite/c-Si tandem solar cells with c-Si solar bottom cells passivated by high thermal-budget poly-Si, poly-SiOx and poly-SiCx is performed to evaluate their optical performance with respect to the conventional tandem solar cells employing silicon heterojunction bottom cells. The parasitic absorption in these carrier selective passivating contacts has been quantified. It is shown that they enable greater than 20 mA/cm2 matched implied photocurrent density in un-encapsulated 2T tandem architecture along with being compatible with high temperature production processes. For studying the performance of such tandem devices in real-world irradiance conditions and for different locations of the world, the effect of solar spectrum and angle of incidence on their optical performance is studied. Passing from mono-facial to bi-facial tandem solar cells, the photocurrent density in the bottom cell can be increased, requiring again optical optimization. Here, we analyse the effect of albedo, perovskite thickness and band gap as well as geographical location on the optical performance of these bi-facial perovskite/c-Si tandem solar cells. Our optical study shows that bi-facial 2T tandems, that also convert light incident from the rear, require radically thicker perovskite layers to match the additional current from the c-Si bottom cell. For typical perovskite bandgap and albedo values, even doubling the perovskite thickness is not sufficient. In this respect, lower bandgap perovskites are very interesting for application not only in bi-facial 2T tandems but also in related 3T and 4T tandems.

Nowadays, an increasing share of photovoltaic (PV) systems makes use of module‐ or submodule‐level power electronics (PE). Furthermore, PE is used in stand‐alone devices powered by PV‐storage solutions. One way to facilitate further implementation of PE in PV applications is to integrate PE components into crystalline silicon PV cells. Herein, the COSMOS device is introduced, denoting COmbined Solar cell and metal‐oxide‐semiconductor field‐effect transistor (MOSFET). Specifically, the combined manufacturing of lateral power MOSFETs and interdigitated back contact solar cells with tunnel‐oxide passivated contacts (TOPCon) on a single wafer is reported. Many steps of the proposed process flow are used for the fabrication of both devices, enabling cost‐effective integration of the MOSFET. Both n‐type solar cells with integrated p‐channel MOSFETs (PMOS) and p‐type solar cells with integrated n‐channel MOSFETs (NMOS) are successfully manufactured. NMOS devices perform better in achieving low on‐resistance, while PMOS devices exhibit lower leakage currents. Furthermore, the study reveals integration challenges where off‐state leakage currents of the MOSFET can increase due to illumination and specific configurations of monolithic interconnections between the MOSFET and the solar cell. Nevertheless, for both n‐type and p‐type solar cells, efficiencies exceeding 20% are achieved, highlighting the potential of the proposed process for COSMOS devices. [ABSTRACT FROM AUTHOR]