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Solid-state quantum emitters embedded in circular Bragg resonators are attractive due to their ability to emit quantum states of light with high brightness and low multi-photon probability. As for any emitter-microcavity system, fabrication imperfections limit the spatial and spectral overlap of the emitter with the cavity mode, thus limiting their coupling strength. Here, we show that an initial spectral mismatch can be corrected after device fabrication by repeated wet chemical etching steps. We demonstrate ~16 nm wavelength tuning for optical modes in AlGaAs resonators on oxide, leading to a 4-fold Purcell enhancement of the emission of single embedded GaAs quantum dots. Numerical calculations reproduce the observations and suggest that the achievable performance of the resonator is only marginally affected in the explored tuning range. We expect the method to be applicable also to circular Bragg resonators based on other material platforms, thus increasing the device yield of cavity-enhanced solid-state quantum emitters.

Quantum communication networks rely on quantum cryptographic protocols including quantum key distribution (QKD) using single photons. A critical element regarding the security of QKD protocols is the photon number coherence (PNC), i.e. the phase relation between the zero and one-photon Fock state, which critically depends on the excitation scheme. Thus, to obtain flying qubits with the desired properties, optimal pumping schemes for quantum emitters need to be selected. Semiconductor quantum dots generate on-demand single photons with high purity and indistinguishability. Exploiting two-photon excitation of a quantum dot combined with a stimulation pulse, we demonstrate the generation of high-quality single photons with a controllable degree of PNC. Our approach provides a viable route toward secure communication in quantum networks., Comment: 17 pages

Excitons in quantum dots are excellent sources of polarization-entangled photon pairs, but a quantitative understanding of their interaction with the nuclear spin bath is still missing. Here we investigate the role of hyperfine energy shifts using experimentally accessible parameters and derive an upper limit to the achievable entanglement fidelity. Our results are consistent with all available literature, indicate that spin-noise is often the dominant process limiting the entanglement in InGaAs quantum dots, and suggest routes to alleviate its effect.

Semiconductor quantum dots have emerged as an especially promising platform for the generation of polarization-entangled photon pairs. However, it was demonstrated recently that the two-photon excitation scheme employed in state-of-the-art experiments limits the achievable degree of entanglement by introducing which-path information. In this work, the combined impact of two-photon excitation and longitudinal acoustic phonons on photon pairs emitted by strongly-confining quantum dots is investigated. It is found that phonons further reduce the achievable degree of entanglement even in the limit of vanishing temperature due to phonon-induced pure dephasing and phonon-assisted one-photon processes, which increase the reexcitation probability. In addition, the degree of entanglement, as measured by the concurrence, decreases with rising temperature and/or pulse duration, even if the excitonic fine-structure splitting is absent and when higher electronic states are out of reach. Furthermore, in the case of finite fine-structure splittings, phonons enlarge the discrepancy in concurrence for different laser polarizations., Comment: 10 pages, 3 figures

Entangled photon pairs are essential for a multitude of photonic quantum applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures. To favor the widespread deployment of these sources, it is important to explore and understand their behavior at temperatures accessible with compact Stirling coolers. Here we study the polarization entanglement among photon pairs from the biexciton-exciton cascade in GaAs quantum dots at temperatures up to 65 K. We observe entanglement degradation accompanied by changes in decay dynamics, which we ascribe to thermal population and depopulation of hot and dark states in addition to the four levels relevant for photon pair generation. Detailed calculations considering the presence and characteristics of the additional states and phonon-assisted transitions support the interpretation. We expect these results to guide the optimization of quantum dots as sources of highly entangled photons at elevated temperatures., Comment: 12 pages, 3 figures, supplemental material

Two-photon resonant excitation of the biexciton-exciton cascade in a quantum dot generates highly polarization-entangled photon pairs in a near-deterministic way. However, the ultimate level of achievable entanglement is still debated. Here, we observe the impact of the laser-induced AC-Stark effect on the quantum dot emission spectra and on entanglement. For increasing pulse-duration/lifetime ratios and pump powers, decreasing values of concurrence are recorded. Nonetheless, additional contributions are still required to fully account for the observed below-unity concurrence., Comment: The first two authors contributed equally to this work. 8 pages, 4 figures

The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the optical properties of nanostructures, we determine the quantum dot morphology and the in-plane components of externally induced strain tensor at the quantum dot positions. Based on these \textsl{experimental} parameters, we calculate the strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting using a combination of eight-band ${\bf k}\cdot{\bf p}$ formalism with multiparticle corrections using the configuration interaction method. The experimental observations are quantitatively well reproduced by our calculations and deviations are discussed.

Combining highly coherent spin control with efficient light-matter coupling offers great opportunities for quantum communication and networks, as well as quantum computing. Optically active semiconductor quantum dots have unparalleled photonic properties, but also modest spin coherence limited by their resident nuclei. Here, we demonstrate that eliminating strain inhomogeneity using lattice-matched GaAs-AlGaAs quantum dot devices prolongs the electron spin coherence by nearly two orders of magnitude, beyond 0.113(3) ms. To do this, we leverage the 99.30(5)% fidelity of our optical pi-pulse gates to implement dynamical decoupling. We vary the number of decoupling pulses up to N = 81 and find a coherence time scaling of N^{0.75(2)}. This scaling manifests an ideal refocusing of strong interactions between the electron and the nuclear-spin ensemble, holding the promise of lifetime-limited spin coherence. Our findings demonstrate that the most punishing material science challenge for such quantum-dot devices has a remedy, and constitute the basis for highly coherent spin-photon interfaces.

Entangled photon pairs are key to many novel applications in quantum technologies. Semiconductor quantum dots can be used as sources of on-demand, highly entangled photons. The fidelity to a fixed maximally entangled state is limited by the excitonic fine-structure splitting. This work demonstrates that, even if this splitting is absent, the degree of entanglement cannot reach unity when the excitation pulse in a two-photon resonance scheme has a finite duration. The degradation of the entanglement has its origin in a dynamically induced splitting of the exciton states caused by the laser pulse itself. Hence, in the setting explored here, the excitation process limits the achievable concurrence for entangled photons generated in an optically excited four-level quantum emitter., Comment: 7 pages, 3 figures, supplemental material

Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of less than 100 nm. This demands a surface passivation scheme, which could be useful to lower the density of surface states. To address this issue, sulphur passivation with dielectric overlayer as an encapsulation is used for surface to QD distances of 40 nm, which results in the partial recovery of emission linewidths to bulk values as well as in the increase of the photoluminescence intensity., Comment: 24 pages, 8 figures

This paper presents an overview and perspectives on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate the recent achievements regarding the generation of single photons and polarization entangled photon pairs and the use of these sources in applications of central importance in quantum communication, such as entanglement swapping and quantum key distribution.

Entanglement-based quantum key distribution promises enhanced robustness against eavesdropping and compatibility with future quantum networks. Among other sources, semiconductor quantum dots can generate polarization-entangled photon pairs with near-unity entanglement fidelity and a multi-photon emission probability close to zero even at maximum brightness. These properties have been demonstrated under resonant two-photon excitation (TPE) and at operation temperatures between 4 and 8 K. However, source blinking is often reported under TPE conditions, limiting the maximum achievable photon rate. In addition, operation temperatures reachable with compact cryo-coolers could facilitate the widespread deployment of quantum dots, e.g. in satellite-based quantum communication. Here we demonstrate blinking-free emission of highly entangled photon pairs from GaAs quantum dots embedded in a p-i-n diode. High fidelity entanglement persists at temperatures of at least 20 K, which we use to implement fiber-based quantum key distribution between two building with an average key rate of 55 bits/s and a qubit error rate of 8.4%. We are confident that by combining electrical control with already demonstrated photonic and strain engineering, quantum dots will keep approaching the ideal source of entangled photons for real world applications.

The realization of a functional quantum repeater is one of the major research goals in long-distance quantum communication. Among the different approaches that are being followed, the one relying on quantum memories interfaced with deterministic quantum emitters is considered as among one of the most promising solutions. In this work, we focus on memory-based quantum-repeater schemes that rely on semiconductor quantum dots for the generation of polarization entangled photons. Going through the most relevant figures of merit related to efficiency of the photon source, we select significant developments in fabrication, processing and tuning techniques aimed at combining high degree of entanglement with on-demand pair generation, with a special focus on the progress achieved in the representative case of the GaAs system. We proceed to offer a perspective on integration with quantum memories, both highlighting preliminary works on natural-artificial atomic interfaces and commenting a wide choice of currently available and potentially viable memory solutions in terms of wavelength, bandwidth and noise-requirements. To complete the overview, we also present recent implementations of entanglement-based quantum communication protocols with quantum dots and highlight the next challenges ahead for the implementation of practical quantum networks.

The generation and long-haul transmission of highly entangled photon pairs is a cornerstone of emerging photonic quantum technologies, with key applications such as quantum key distribution and distributed quantum computing. However, a natural limit for the maximum transmission distance is inevitably set by attenuation in the medium. A network of quantum repeaters containing multiple sources of entangled photons would allow to overcome this limit. For this purpose, the requirements on the source's brightness and the photon pairs' degree of entanglement and indistinguishability are stringent. Despite the impressive progress made so far, a definitive scalable photon source fulfilling such requirements is still being sought for. Semiconductor quantum dots excel in this context as sub-poissonian sources of polarization entangled photon pairs. In this work we present the state-of-the-art set by GaAs based quantum dots and use them as a benchmark to discuss the challenges to overcome towards the realization of practical quantum networks.

State-of-the-art quantum key distribution systems are based on the BB84 protocol and single photons generated by lasers. These implementations suffer from range limitations and security loopholes, which require expensive adaptation. The use of polarization entangled photon pairs substantially alleviates the security threads while allowing for basically arbitrary transmission distances when embedded in quantum repeater schemes. Semiconductor quantum dots are capable of emitting highly entangled photon pairs with ultra-low multi-pair emission probability even at maximum brightness. Here we report on the first implementation of the BBM92 protocol using a quantum dot source with an entanglement fidelity as high as 0.97(1). For a proof of principle, the key generation is performed between two buildings, connected by 350 metre long fiber, resulting in an average key rate of 135 bits/s and a qubit error rate of 0.019 over a time span of 13 hours, without resorting to time- or frequency-filtering techniques. Our work demonstrates the viability of quantum dots as light sources for entanglement-based quantum key distribution and quantum networks. By embedding them in state-of-the-art photonic structures, key generation rates in the Gbit/s range are at reach., Comment: 7 pages, 2 figures

Light emission from solid-state quantum emitters is inherently prone to environmental decoherence, which results in an inhomogeneous line broadening and in the deterioration of photon indistinguishability. Here we employ photon correlation Fourier spectroscopy (PCFS) to study the temporal evolution of such a broadening for the biexciton and exciton emission in resonantly driven GaAs quantum dots. Differently from previous experiments, the time scales we probe range from a few nanoseconds to milliseconds and, simultaneously, the spectral resolution we achieve can be as small as 2 $\mu$eV. We find pronounced differences in the temporal evolution of the two lines, which we attribute to differences in their homogeneous linewidth and sensitivity to charge noise. We then analyze the effect of irradiation with additional white light, which reduces blinking at the cost of enhanced charge noise. Due to its robustness against experimental imperfections and its high temporal resolution and bandwidth, PCFS outperforms established spectroscopy techniques, such as Michelson interferometry. We discuss its practical implementation, its limitations, and the possibility to use it to estimate the indistinguishability of consecutively emitted single photons for applications in quantum communication and photonic-based quantum information processing.

Semiconductor quantum dots are converging towards the demanding requirements of photonic quantum technologies. Among different systems, quantum dots with dimensions exceeding the free-exciton Bohr radius are appealing because of their high oscillator strengths. While this property has received much attention in the context of cavity quantum electrodynamics, little is known about the degree of indistinguishability of single photons consecutively emitted by such dots and on the proper excitation schemes to achieve high indistinguishability. A prominent example is represented by GaAs quantum dots obtained by local droplet etching, which recently outperformed other systems as triggered sources of entangled photon pairs. On these dots, we compare different single-photon excitation mechanisms, and we find (i) a "phonon bottleneck" and poor indistinguishability for conventional excitation via excited states and (ii) photon indistinguishablilities above 90% for both strictly resonant and for incoherent acoustic- and optical-phonon-assisted excitation. Among the excitation schemes, optical phonon-assisted excitation enables straightforward laser rejection without a compromise on the source brightness together with a high photon indistinguishability.

Photonic entanglement swapping, the procedure of entangling photons without any direct interaction, is a fundamental test of quantum mechanics and an essential resource to the realization of quantum networks. Probabilistic sources of non-classical light can be used for entanglement swapping, but quantum communication technologies with device-independent functionalities demand for push-button operation that, in principle, can be implemented using single quantum emitters. This, however, turned out to be an extraordinary challenge due to the stringent requirements on the efficiency and purity of generation of entangled states. Here we tackle this challenge and show that pairs of polarization-entangled photons generated on-demand by a GaAs quantum dot can be used to successfully demonstrate all-photonic entanglement swapping. Moreover, we develop a theoretical model that provides quantitative insight on the critical figures of merit for the performance of the swapping procedure. This work shows that solid-state quantum emitters are mature for quantum networking and indicates a path for scaling up., Comment: The first four authors contributed equally to this work. 17 pages, 3 figures

Entangled photon generation from semiconductor quantum dots via the biexciton-exciton cascade underlies various decoherence mechanisms related to the solid-state nature of the quantum emitters. So far, this has prevented the demonstration of nearly-maximally entangled photons without the aid of inefficient and complex post-selection techniques that are hardly suitable for quantum communication technologies. Here, we tackle this challenge using strain-tunable GaAs quantum dots driven under two-photon resonant excitation and with strictly-degenerate exciton states. We demonstrate experimentally that our on-demand source generates polarization-entangled photons with fidelity of 0.978(5) and concurrence of 0.97(1) without resorting to post-selection techniques. Moreover, we show that the remaining decoherence mechanisms can be overcome using a modest Purcell enhancement so as to achieve a degree of entanglement >0.99. Our results highlight that GaAs quantum dots can be readily used in advanced communication protocols relying on the non-local properties of quantum entanglement.

The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary quantum dots. Future research directions and prospects are discussed., Comment: review manuscript, 78 pages, 27 figures

The optical selection rules in epitaxial quantum dots are strongly influenced by the orientation of their natural quantization axis, which is usually parallel to the growth direction. This configuration is well suited for vertically emitting devices, but not for planar photonic circuits because of the poorly controlled orientation of the transition dipoles in the growth plane. Here we show that the quantization axis of gallium arsenide dots can be flipped into the growth plane via moderate in plane uniaxial stress. By using piezoelectric strain actuators featuring strain-amplification we study the evolution of the selection rules and excitonic fine-structure in a regime, in which quantum confinement can be regarded as a perturbation compared to strain in determining the symmetry properties of the system. The experimental and computational results suggest that uniaxial stress, may be the right tool to obtain quantum light sources with ideally oriented transition dipoles and enhanced oscillator strengths for integrated quantum photonics., Comment: 44 pages, 17 figures (including supplementary information)

Photonic quantum technologies are on the verge of finding applications in everyday life with quantum cryptography and the quantum internet on the horizon. Extensive research has been carried out to determine suitable quantum emitters and single epitaxial quantum dots are emerging as near-optimal sources of bright, on-demand, highly indistinguishable single photons and entangled photon pairs. In order to build up quantum networks, it is now essential to interface remote quantum emitters. However, this is still an outstanding challenge, as the quantum states of dissimilar 'artificial atoms' have to be prepared on-demand with high fidelity, and the generated photons have to be made indistinguishable in all possible degrees of freedom. Here, we overcome this major obstacle and show an unprecedented two-photon interference (visibility of 51+/-5%) from remote strain-tunable GaAs quantum dots, emitting on-demand photon-pairs. We achieve this result by exploiting for the first time the full potential of the novel phonon-assisted two-photon excitation scheme, which allows for the generation of highly indistinguishable (visibility of 71+/-9%) entangled photon-pairs (fidelity of 90+/-2%), it enables push-to button biexciton state preparation (fidelity of 80+/-2%) and it outperforms conventional resonant two-photon excitation schemes in terms of robustness against environmental decoherence. Our results mark an important milestone for the practical realization of quantum repeaters and complex multi-photon entanglement experiments involving dissimilar artificial atoms.

Strain engineering allows the physical properties of materials and devices to be widely tailored, as paradigmatically demonstrated by strained transistors and semiconductor lasers employed in consumer electronics. For this reason, its potential impact on our society has been compared to that of chemical alloying. Although significant progress has been made in the last years on strained nanomaterials, strain fields (which are of tensorial nature, with six independent components) are still mostly used in a "scalar" and/or static fashion. Here we present a new class of strain actuators which allow the three components of the in-plane stress tensor in a nanomembrane to be independently and reversibly controlled. The actuators are based on monolithic piezoelectric substrates, which are micro-machined via femtosecond-laser processing. Their functionality is demonstrated by "programming" arbitrary stress states in a semiconductor layer, whose light emission is used as a local and sensitive strain gauge. The results shown in this work open a new route to investigate and make use of strain effects in materials and devices., Comment: 16 pages, 4 figures

The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled-photons. Semiconductor quantum dots are arguably the most attractive. They can generate indistinguishable entangled-photons deterministically, and are compatible with current photonic-integration technologies, a set of properties not shared by any other entanglement resource. However, as no two quantum dots are identical, they emit entangled-photons with random energies. This hinders their exploitation in communication protocols requiring entangled-states with well-defined energies. Here, we introduce scalable quantum-dot-based sources of polarization-entangled-photons whose energy can be controlled via dynamic strain-engineering without degrading the degree of entanglement of the source. As a test-bench, we interface quantum dots with clouds of atomic vapours, and we demonstrate slow-entangled-photons from a single quantum emitter. These results pave the way towards the implementation of hybrid quantum networks where entanglement is distributed among distant parties using scalable optoelectronic devices.