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Abstract Background Malignant femoral soft tissue tumors are occasionally resected together with the femoral nerves, but this can cause loss of knee extensor muscle activity. To the best of our knowledge, no previous reports have detailed the gait analysis of such cases in combination with electromyography. Herein, we report the gait analysis of a patient who underwent left groin synovial sarcoma and left femoral nerve resection 12 years ago. Case presentation We analyzed the gait of a 38-year-old man who was able to walk unaided after the resection of a synovial sarcoma in the left groin together with the ipsilateral femoral nerve. The muscle activities of the affected medial (MH) and lateral hamstrings (LH), and lateral heads of the gastrocnemius (GL) were increased during 50–75% of the stance phase. The hip flexion angle of the affected limb was smaller, and the ankle plantar flexion angle of the affected limb was larger than that of the non-affected limb. This means that in the affected limb, the hip and ankle angles were adjusted to prevent knee collapse, and the MH, LH, and GL muscles contributed in the mid- and late-stance phases. Moreover, we found that the hamstring and gastrocnemius of the affected limb worked together to keep the ipsilateral knee extended in the mid-stance phase and slightly flexed in the late-stance phase. Conclusions Patients capable of walking after femoral nerve resection may control their hamstrings and gastrocnemius muscles collaboratively to prevent ipsilateral knee collapse in the mid- and late-stance phases.

Extracranial metastases from intracranial meningioma involve multiple organs with repeatedly recurrence. Due to the rarity of these metastases, management remains to be established, especially in cases that are not amenable to surgery, such as postsurgical relapse and multiple metastases. We present the case of a right tentorial meningioma with multiple extracranial metastases, including postsurgical recurrent liver metastases. The intracranial meningioma was surgically resected when the patient was 53 years of age. The patient was 66 years of age when the hepatic lesion was first revealed, for which an extended right posterior sectionectomy was performed. Histopathology demonstrated a metastatic meningioma. Twelve months after liver resection, multiple local recurrences in the right hepatic lobe were revealed. Because additional surgical resection would put the patient at risk of declining residual liver function, we performed selective transarterial chemoembolization, resulting in a reduction in size and good control without relapse. Selective transarterial chemoembolization for incurable liver metastatic meningiomas could be valuable in palliating patients unsuitable for surgery.

We have investigated the formation of the locally strained Ge nanostructure with epitaxial Ge1-xSnx stressors and characterized the microscopic strain field in the Ge1-xSnx/Ge fineheterostructures by synchrotron X-ray microdiffraction and finite element method (FEM) calculations. We achieved local epitaxial growth of Ge1-xSnx with Sn contents of 2.9% and 6.5%, sandwiching the 25 nm-wide Ge fine line structure. Microdiffraction measurements revealed that out-of-plane tensile strain induced in the Ge line effectively increased with decreasing Ge width and increasing Sn content of Ge1-xSnx stressors, which is in good agreement with FEM calculations. An out-of-plane tensile strain of 0.8% along the Ge[001] direction is induced in a 25 nmwide Ge line, which corresponds to an in-plane uniaxial compressive strain of 1.4% in the Ge line sandwiched between Ge0.935Sn0.065 stressors. [ABSTRACT FROM AUTHOR]

Abstract Background Delay in fracture healing or non-union can be devastating complication. Recent studies have reported that teriparatide (TP) demonstrated effectively on callus formation and mechanical strength and zoledronate (ZA) increased the callus size and resistance at the fracture site in rat fracture model. In this study, the effects of combination therapy with low dose TP and ZA on fracture healing was evaluated. Methods From 1 week post-operation, TP (5 times a week administration) and ZA (0.1 mg/kg single administration) were administered by dividing the rats into the following five groups: TP 1 μg group {T(1): TP 1 μg/kg}, ZA group (ZA:0.1 mg/kg), TP1 μg+ZA group {T(1)+ZA: TP 1 μg/kg+ZA}, TP 10 μg+ZA group {T(10)+ZA: TP 10 μg/kg + ZA}, and control group (C: administered saline). Rt femurs were excised 7 weeks after the surgery; bone fusions were evaluated with soft X-ray images on a 4-point scale. And the histopathological examination was performed in demineralized and non-demineralized specimens. Furthermore, the Radiographic Union Scale was conducted in all specimens. Results About the bone fusions rates, C, T(1), ZA, T(1)+ZA, and T(10)+ZA groups demonstrated 20.0%, 55.6%, 70.0%, 70.0%, and 80.0%, respectively, and with 4-point scale, each group was 0.50, 1.56, 2.00, 2.60, and 2.80 points, respectively. The callus volume was significantly increased to 16.66 mm2 and 17.75 mm2 in the T(1)+ZA and T(10)+ZA groups, respectively, while 10.65 mm2 (p

Study DesignRetrospective cross-sectional study.PurposeTo investigate the relationship between ligamentum flavum (LF) hypertrophy and lumbar segmental motion.Overview of LiteratureThe pathogenesis of LF thickening is unclear and whether the thickening results from tissue hypertrophy or buckling remains controversial.Methods296 consecutive patients underwent assessment of the lumbar spine by radiographic and magnetic resonance imaging (MRI). Of these patients, 39 with normal L4–L5 disc height were selected to exclude LF buckling as one component of LF hypertrophy. The study group included 27 men and 12 women, with an average age of 61.2 years (range, 23–81 years). Disc degeneration and LF thickness were quantified on MRI. Lumbar segmental spine instability and presence of a vacuum phenomenon were identified on radiographic images.ResultsThe distribution of disc degeneration and LF thickness included grade II degeneration in 4 patients, with a mean LF thickness of 2.43±0.20 mm; grade III in 10 patients, 3.01±0.41 mm; and grade IV in 25 patients, 4.16±1.12 mm. LF thickness significantly increased with grade of disc degeneration and was significantly correlated with age (r=0.55, p

The present work proposes the shear type body force dipole (BFD) in addition to the normal type to simulate residual stress fields more properly. Expressions for the displacements and stresses induced by the BFD are derived and formulated in the boundary integral equations which govern the elastic field. In the first step of the numerical approach, the sensitivity matrix is constructed to correlate the BFD distributions with the boundary stresses, and is transformed into the generalized inverse matrix by the singular value decomposition technique. Then the generalized inverse matrix is operated on the boundary stresses so that the unknown BFD distributions are evaluated. Based on the study for the effect of the shear type BFD on stress and displacement, discussions are focused to the accuracy of the inverse analysis and the influencing factors such as the number of stress data. The use of the boundary displacement besides the stress data is not important to improve the accuracy in the present problem. It is also suggested that the accuracy of the evaluated BFD distribution can be improved by the following iteration of forward stress analysis so as to minimize the stress error norm at the boundary.

The electrical and optical material properties of epitaxial Ge1−xSnx and SiyGe1−x−ySnx are of high interest for novel device applications. However, the limited Sn solubility in Ge makes the epitaxial growth of Ge1−xSnx and SiyGe1−x−ySnx challenging. Most of the literature describing the epitaxial growth is for Ge2H6 and SnCl4 as Ge and Sn precursors, respectively. A more recent publication deals with the epitaxial growth of high-quality Ge1−xSnx with the more conventional GeH4. In this manuscript, we compare the structural and optical material quality of Ge1−xSnx, epitaxially grown on Ge virtual substrates as a function of growth pressure, growth temperature, the choice of the carrier gas (H2 or N2) and the choice of the Ge precursor (GeH4 versus Ge2H6). The best material quality in terms of surface morphology and photoluminescence characteristics is obtained if GeH4 is used as a Ge precursor. For Ge1−xSnx grown with Ge2H6 and at atmospheric pressure, pyramidical defects can be seen and there is a risk for uncontrolled local Sn agglomeration. The pyramidical defects are not observed on Ge1−xSnx layers grown at reduced pressure, but the highest achievable substitutional Sn concentration is lower. No pyramidical defects are found for Ge1−xSnx layers grown with GeH4 and the issue of uncontrolled local Sn agglomeration does not appear. [ABSTRACT FROM AUTHOR]

We report the metal-organic chemical vapor deposition method for epitaxy of n+-Ge and Ge1−xSnx layer with an electron concentration as high as 2 × 1019 cm−3 by in situ phosphorus (P) doping. In this study, we examined MO precursors of tertiary-butyl-germane (t-BGe), tri-butyl-vinyl-tin (TBVSn), and two kinds of P precursors of tri-ethyl-phosphine (TEP) and tertiary-butyl-phosphine (t-BP). We have investigated crystalline and electrical characteristics of P-doped Ge and Ge1−xSnx layers. In the case of using TEP, the P-doped Ge0.98Sn0.02 epitaxial layer grown at 320 °C on virtual Ge substrate was demonstrated, in which the chemical P-incorporation as high as 1 × 1019 cm−3 and the full electrical activation of P. By using t-BP instead of TEP, the chemical P-incorporation as high as 8.1 × 1019 cm−3 was achieved for Ge epitaxial layer grown at 300 °C. It is found that the activation energy of the growth rate of Ge and P with t-BGe, TEP, and t-BP was estimated to be 1.0−1.2, 2.1, and 1.1 eV, respectively. The precursor combination of t-BGe and t-BP has a wider temperature window for a lower growth temperature. In situ P-doping with t-BP enables us to grow the Ge0.975Sn0.025 epitaxial layer with an electron concentration as high as 1.7 × 1019 cm−3 at the temperature as low as 300 °C. For both cases of TEP and t-BP, we observed that increasing Sn content significantly reduces the P-incorporation, which is not common phenomenon in a conventional CVD growth. [ABSTRACT FROM AUTHOR]

We have investigated the structural and electrical properties of n-type doped Si1−xGex epitaxial layers (x = 24–26%) grown by chemical vapor deposition with conventional [SiH2Cl2 (DCS)/GeH4] and high-order (Si2H6/Ge2H6) precursor combinations. X-ray diffraction, atomic force microscopy, and deep-level transient spectroscopy (DLTS) measurements were performed for characterization. The crystalline properties and surface morphology of the Si1−xGex layer with Si2H6/Ge2H6 grown at temperatures as low as 550 °C show good structural quality similar to that with DCS/GeH4 grown at 615 °C. On the other hand, in terms of electrical properties, the DLTS measurement reveals the existence of vacancy-related complexes in the as-grown layer with Si2H6/Ge2H6. We found that post-deposition annealing at 200 °C for the Si1−xGex epitaxial layer is effective for annihilating vacancy-related defects with densities down to as low as that of conventional precursors. [ABSTRACT FROM AUTHOR]