1. Fabrication and characterization of low-loss TFMS on silicon substrate up to 220 GHz
- Author
-
Six, Gonzague, Prigent, Gaetan, Rius, Eric, Dambrine, Gilles, and Happy, Henri
- Subjects
Dielectric films -- Research ,Thin films -- Research ,Business ,Computers ,Electronics ,Electronics and electrical industries - Abstract
This paper presents the results of the fabrication and characterization up to 220 GHz, of thin-film microstrip (TFMS) transmission-line structures. The transmission lines are fabricated on a low-resistivity silicon substrate ([rho] = 10 [ohm] * cm). TFMS lines with a thick dielectric layer (20 [micro]m of benzocyclobutene is used here) present losses of 0.3 dB/mm at 94 GHz and 0.6 dB/mm at 220 GHz. Thus, using this technology, it will be possible to develop monolithic microwave integrated circuits on a silicon substrate. Index Terms--Dielectric film, low-resistivity silicon substrate, silicon, silicon monolithic microwave integrated circuits (MMICs), transmission lines.
- Published
- 2005