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Epitaxial growth is a powerful tool for synthesizing heterostructures and integrating multiple functionalities. However, interfacial mixing can readily occur and significantly modify the properties of layered structures, particularly for those containing energy storage materials with smaller cations. Here, we show a two-step sequence involving the growth of an epitaxial LiCoO

We assess the validity of criteria based on size mismatch and thermodynamics in predicting the stability of the rare class of high-entropy alloys (HEAs) that form in the hexagonal close-packed crystal structure. We focus on nanocrystalline HEA particles composed predominantly of Mo, Tc, Ru, Rh, and Pd along with Ag, Cd, and Te, which are produced in uranium dioxide fuel under the extreme conditions of nuclear reactor operation. The constituent elements are fission products that aggregate under the combined effects of irradiation and elevated temperature as high as 1200 °C. We present the recent results on alloy nanoparticle formation in irradiated ceria, which was selected as a surrogate for uranium dioxide, to show that radiation-enhanced diffusion plays an important role in the process. This work sheds light on the initial stages of alloy nanoparticle formation from a uniform dispersion of individual metals. The remarkable chemical durability of such multiple principal element alloys presents a solution, namely, an alloy waste form, to the challenge of immobilizing Tc.

Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling complex oxides to traditional semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Essential to electrically coupling complex oxides to semiconductors is control of the physical structure of the epitaxially grown oxide, as well as the electronic structure of the interface. Here we discuss how composition of the perovskite A- and B-site cations can be manipulated to control the physical and electronic structure of semiconductor—complex oxide heterostructures. Two prototypical heterostructures, Ba1−xSrxTiO3/Ge and SrZrxTi1−xO3/Ge, will be discussed. In the case of Ba1−xSrxTiO3/Ge, we discuss how strain can be engineered through A-site composition to enable the re-orientable ferroelectric polarization of the former to be coupled to carriers in the semiconductor. In the case of SrZrxTi1−xO3/Ge we discuss how B-site composition can be exploited to control the band offset at the interface. Analogous to heterojunctions between compound semiconducting materials, control of band offsets, i.e., band-gap engineering, provides a pathway to electrically couple complex oxides to semiconductors to realize a host of functionalities.

Nonuniform and highly localized Li dendrites are known to cause deleterious and, in many cases, catastrophic effects on the performance of rechargeable Li batteries. However, the mechanisms of cathode failures upon contact with Li metal are far from clear. In this study, using in situ transmission electron microscopy, the interaction of Li metal with well-defined, epitaxial thin films of LiCoO

Hysteretic behavior was studied in a series of Fe thin films, grown by molecular beam epitaxy, having different grain sizes and grown on different substrates. Major and minor loops and first order reversal curves (FORCs) were collected to investigate magnetization mechanisms and domain behavior under different magnetic histories. The minor loop coefficient and major loop coercivity increase with decreasing grain size due to higher defect concentration resisting domain wall movement. First order reversal curves allowed estimation of the contribution of irreversible and reversible susceptibilities and switching field distribution. The differences in shape of the major loops and first order reversal curves are described using a classical Preisach model with distributions of hysterons of different switching fields, providing a powerful visualization tool to help understand the magnetization switching behavior of Fe films as manifested in various experimental magnetization measurements.

Polarization-induced weak ferromagnetism has been predicted a few years back in compounds MTiO 3 (M = Fe, Mn, Ni) (Fennie, 2008). We set out to stabilize this metastable, distorted perovskite structure by growing NiTiO 3 epitaxially on sapphire Al 2 O 3 (001) substrate, and to control the polar and magnetic properties via strain. Epitaxial Ni 1 − x Ti 1 − y O 3 films of different Ni/Ti ratios and thicknesses were deposited on Al 2 O 3 substrates by pulsed laser deposition at different temperatures, and characterized using several techniques. The effect of film thickness, deposition temperature, and film stoichiometry on lattice strain, film structure, and physical properties was investigated. Our structural data from x-ray diffraction, electron microscopy, and x-ray absorption spectroscopy shows that substrate-induced strain has a marked effect on the structure and crystalline quality of the films. Physical property measurements reveal a dependence of the Neel transition and lattice polarization on strain, and highlight our ability to control the ferroic properties in NiTiO 3 thin films by film stoichiometry and thickness.

High quantum efficiency enhancement is found for hybrid metal-insulator photocathodes consisting of thin films of CsI deposited on Cu(1 0 0), Ag(1 0 0), Au(1 1 1) and Au films irradiated by 266 nm laser pulses. Low work functions (near or below 2 eV) are observed following ultraviolet laser activation. Work functions are reduced by roughly 3 eV from that of clean metal surfaces. We discuss various mechanisms of quantum efficiency enhancement for alkali halide/metal photocathode systems and conclude that the large change in work function, due to Cs accumulation of Cs metal at the metal–alkali halide interface, is the dominant mechanism for quantum efficiency enhancement.

Ultrathin films of barium oxide were grown on Ag(001) and Ag(111) using the evaporation of Ba metal in an O2 atmosphere by molecular beam epitaxy. Ultraviolet photoemission spectroscopy reveals that films consisting of predominantly BaO or BaO2 result in Ag(001) work function reductions of 1.74 eV and 0.64 eV, respectively. On the Ag(001) surface, Ba oxide growth is initiated by two-dimensional nucleation of epitaxial BaO, followed by a transition to three-dimensional dual-phase nucleation of epitaxial BaO and BaO2. Three-dimensional islands of primarily BaO2(111) nucleate epitaxially on the Ag(111) substrate leaving large patches of Ag uncovered. We find no indication of chemical reaction or charge transfer between the films and the Ag substrates. These data suggest that the origin of the observed work function reduction is largely due to a combination of BaO surface relaxation and an electrostatic compressive effect.

Epitaxial rutile-structured single-crystal Mn x Ti 1 − x O 2 − δ films were synthesized on rutile- (110) and -(001) substrates using pulsed laser deposition. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and aberration-corrected transmission electron microscopy (ACTEM). Under the present conditions, 400 °C and P O 2 = 20 mTorr, single crystal epitaxial thin films were grown for x = 0.13, where x is the nominal average mole fraction of Mn. In fact, arbitrarily thick films could be grown with near invariant Mn/Ti concentration profiles from the substrate/film interface to the film surface. In contrast, at x = 0.25, Mn became enriched towards the surface and a secondary nano-scale phase formed which appeared to maintain the basic rutile structure but with enhanced z-contrast in the tunnels, or interstitial sites. Ab initio thermodynamic calculations provided quantitative estimates for the destabilizing effect of expanding the β-MnO 2 lattice parameters to those of TiO 2 -rutile, the stabilizing effect of diluting Mn with increasing Ti concentration, and competing reaction pathways for surface oxide formation.

The magnetic susceptibility of synthesized magnetite (Fe3O4) microspheres was found to decline after the growth of a metal–organic framework (MOF) shell on the magnetite core. Detailed structural analysis of the core–shell particles using scanning electron microscopy, transmission electron microscopy, atom probe tomography, and57Fe–Mossbauer spectroscopy suggests that the distribution of MOF precursors inside the magnetic core resulted in the oxidation of the iron oxide core.

We show that the HF acid etch commonly used to prepare SrTiO3(001) for heteroepitaxial growth of complex oxides results in a non-negligible level of F doping within the terminal surface layer of TiO2. Using a combination of x-ray photoelectron spectroscopy and scanned angle x-ray photoelectron diffraction, we determine that on average ~ 13% of the O anions in the surface layer are replaced by F, but that F does not occupy O sites in deeper layers. Despite this perturbation to the surface, the Fermi level remains unpinned, and the surface-state density, which determines the amount of band bending, is driven by factors other than F doping. The presence of F at the STO surface is expected to result in lower electron mobilities at complex oxide heterojunctions involving STO substrates because of impurity scattering. Unintentional F doping can be substantially reduced by replacing the HF-etch step with a boil in deionized water, which in conjunction with an oxygen tube furnace anneal, leaves the surface flat and TiO2 terminated.

The flux of atomic oxygen generated in an electron cyclotron resonance microwave plasma source was quantified by two different methods. The commonly applied approach of monitoring the frequency change of a silver-coated quartz crystal microbalance (QCM) deposition rate monitor as the silver is oxidized was found to underestimate the atomic oxygen flux by an order of magnitude compared to a more direct deposition approach. In the mixed-phase Ag/Ag 2 O deposition method, silver films were deposited in the presence of atomic oxygen such that the films were partially oxidized to Ag 2 O; X-ray photoelectron spectroscopy was utilized for quantification of the oxidized fraction. The inaccuracy of the QCM oxidation method was tentatively attributed to efficient catalytic recombination of O atoms on the silver surface.

The question of stability against diffusional mixing at the prototypical LaAlO3/SrTiO3(001) interface is explored using a multi-faceted experimental and theoretical approach. We combine analytical methods with a range of sensitivities to elemental concentrations and spatial separations to investigate interfaces grown using on-axis pulsed laser deposition. We also employ computational modeling based on the density function theory as well as classical force fields to explore the energetic stability of a wide variety of intermixed atomic configurations relative to the idealized, atomically abrupt model. Statistical analysis of the calculated energies for the various configurations is used to elucidate the relative thermodynamic stability of intermixed and abrupt configurations. We find that on both experimental and theoretical fronts, the tendency toward intermixing is very strong. We have also measured and calculated key electronic properties such as the presence of electric fields and the value of the valence band discontinuity at the interface. We find no measurable electric field in either the LaAlO3 or SrTiO3, and that the valence band offset is near zero, partitioning the band discontinuity almost entirely to the conduction band edge. Moreover, we find that it is not possible to account for these electronic properties theoretically without including extensive intermixing in our physical model of the interface. The atomic configurations which give the greatest electrostatic stability are those that eliminate the interface dipole by intermixing, calling into question the conventional explanation for conductivity at this interface - electronic reconstruction. Rather, evidence is presented for La indiffusion and doping of the SrTiO3 below the interface as being the cause of the observed conductivity.

We describe the synthesis and characterization of high-performance, superparamagnetic, iron oxide nanoparticle-based, heavy metal sorbents, which demonstrate excellent affinity for the separation of heavy metals in contaminated water systems (i.e., spiked Columbia River water). The magnetic nanoparticle sorbents were prepared from an easy-to-synthesize iron oxide precursor, followed by a simple, one-step ligand exchange reaction to introduce an affinity ligand to the nanoparticle surface that is specific to a heavy metal or class of heavy metal contaminants. The engineered magnetic nanoparticle sorbents have inherently high active surface areas, allowing for increased binding capacities. To demonstrate the performance of the nanoparticle sorbents, river water was spiked with specific metals and exposed to low concentrations of the functionalized nanoparticles. In almost all cases, the nanoparticles were found to be superior to commercially available sorbent materials as well as the unfunctionalized iron oxide nanoparticles.

Antibody recognition force microscopy showed that OmcA and MtrC are expressed on the exterior surface of living Shewanella oneidensis MR-1 cells when Fe(III), including solid-phase hematite (Fe 2 O 3 ), was the terminal electron acceptor. OmcA was localized to the interface between the cell and mineral. MtrC displayed a more uniform distribution across the cell surface. Both cytochromes were associated with an extracellular polymeric substance.

Dissimilatory iron-reducing bacteria transfer electrons to solid ferric respiratory electron acceptors. Outer-membrane cytochromes expressed by these organisms are of interest in both microbial fuel cells and biofuel cells. We use optical waveguide lightmode spectroscopy (OWLS) to show that OmcA, an 85 kDa decaheme outer-membrane c-type cytochrome from Shewanella oneidensis MR-1, adsorbs to isostructural Al2O3 and Fe2O3 in similar amounts. Adsorption is ionic-strength and pH dependent (peak adsorption at pH 6.5–7.0). The thickness of the OmcA layer on Al2O3 at pH 7.0 [5.8 ± 1.1 (2σ) nm] from OWLS is similar, within error, to that observed using atomic force microscopy (4.8 ± 2 nm). The highest adsorption density observed was 334 ng cm−2 (2.4 × 1012 molecules cm−2), corresponding to a monolayer of 9.9 nm diameter spheres or submonolayer coverage by smaller molecules. Direct electrochemistry of OmcA on Fe2O3 electrodes was observed using cyclic voltammetry, with cathodic peak potentials of −380 to −320 mV versus Ag/AgCl. Variations in the cathodic peak positions are speculatively attributed to redox-linked conformation change or changes in molecular orientation. OmcA can exchange electrons with ITO electrodes at higher current densities than with Fe2O3. Overall, OmcA can bind to and exchange electrons with several oxides, and thus its utility in fuel cells is not restricted to Fe2O3.

Photoemission electron microscopy (PEEM) excited by x-ray and UV sources is used to investigate epitaxial anatase thin films embedded with rutile nanocrystals, a model system for the study of heterocatalysis on mixed-phase TiO2. Both excitation sources show distinct contrast between the two TiO2 phases, however, the contrast is reversed. Rutile nanocrystals appear darker than the anatase film in X-ray PEEM images but brighter in UV-PEEM images. Topography-induced contrast is dominant X-ray PEEM imaging, whereas work function contrast, dominates for UV-PEEM. Work function contrast results from the differences in work function and surface defect state densities between the two phases near the Fermi level. This assertion is confirmed by UPS data that shows the rutile work function to be 0.2 eV lower and a greater occupied valence band density-of-states in rutile (100) than in anatase (001). Since the boundaries between rutile nanocrystals and the anatase film are clearly resolved, these results indicate that PEEM studies of excited state dynamics and heterocatalysis are possible at chemically intriguing mixed-phase TiO2 interfaces and grain boundaries.

Thermally-induced martensitic phase transformations in polycrystalline CuZnAl and thin-film NiTiCu shape memory alloys were probed using photoemission electron microscopy (PEEM). Ultra-violet photoelectron spectroscopy shows a reversible change in the apparent work function during transformation, presumably due to the contrasting surface electronic structures of the martensite and austenite phases. In situ PEEM images provide information on the spatial distribution of these phases and the evolution of the surface microstructure during transformation. PEEM offers considerable potential for improving our understanding of martensitic transformations in shape memory alloys in real time.

The thermally-induced martensitic phase transformation in a polycrystalline NiTiCu thin film shape memory alloy was probed by photoelectron emission microscopy (PEEM). In situ PEEM images reveal distinct changes in microstructure and photoemission intensity at the phase transition temperatures. In particular, images of the low temperature, martensite phase are brighter than that of the high temperature, austenite phase, due to the relatively lower work function of the martensite. Ultra-violet photoelectron spectroscopy shows that the effective work function changes by about 0.16 eV during thermal cycling. In situ PEEM images also show that the network of trenches observed on the room temperature film disappear suddenly during heating and reappear suddenly during subsequent cooling. These trenches are also characterized by atomic force microscopy at selected temperatures. We describe implications of these observations with respect to the spatial distribution of phases during thermal cycling in this thin film shape memory alloy.

Over the past five years, considerable work has been carried out in the exploration of candidate diluted oxide magnetic semiconductors with high Curie temperatures. Fueled by early experimental results and theoretical predictions, claims of ferromagnetism at and above room temperature in doped oxides have abounded. In general, neither the true nature of these materials nor the physical causes of the magnetism have been adequately determined. It is now apparent that these dilute magnetic systems are deceptively complex. We consider two well-characterizedn-type magnetically doped oxide semiconductors and explore the relationship between donor electrons and ferromagnetism.

It has recently been demonstrated that magnetically doped TiO2 and SnO2 show ferromagnetism at room temperature and Curie temperatures above room temperature. However, accurate knowledge of dopant concentrations is necessary to quantify magnetic moments in these materials. Rutherford backscattering spectrometry (RBS) is one of the powerful techniques to quantify magnetic transition-metal dopant concentrations in these materials. However, in some cases, the interference of RBS signals for different dopants and substrate elements in these materials makes analysis difficult. In this work, we demonstrate that particle induced X-ray emission (PIXE) can be successfully used to quantify the magnetic transition-element dopants in several room temperature ferromagnetic materials synthesized using three different synthesis methods: oxygen plasma-assisted molecular-beam epitaxy, ion implantation and wet chemical synthesis.

The growth of MoO 3 films on SrLaAlO 4 (0 0 1), a substrate lattice-matched to β-MoO 3 , by oxygen plasma assisted molecular beam epitaxy was characterized using reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy, X-ray diffraction (XRD), and atomic force and scanning tunneling microscopies (AFM and STM). It was found that the flux of reactive oxygen species to the surface was not high enough to maintain the proper stoichiometry, even at the lowest measurable deposition rates. Therefore, the films were grown by depositing Mo in small increments and then allowing the Mo to oxidize. At 675 K, the films grew epitaxially but in a three-dimensional manner. XRD of films grown under these conditions revealed a tetragonal structure that has not been previously observed in bulk MoO 3 samples. Decreasing the growth temperature to 535 K led to polycrystalline α-MoO 3 preferentially aligned with the [0 1 0] and [1 0 0] directions of the grains oriented normal to the substrate. By manipulating the initial growth conditions, relatively flat, epitaxial MoO 3 films could be grown on SrLaAlO 4 (0 0 1). In this case, the equivalent of one layer of β-MoO 3 (0 0 1) was deposited at 675 K before adding several layers of MoO 3 at 550 K. Unlike growth solely at 675 K, the MoO 3 formed in this manner did not dewet the surface when reheated to 675 K and RHEED indicated that continued MoO 3 growth at this temperature proceeded epitaxially. XRD and AFM indicated that films grown in this manner contained α-MoO 3 crystallites in addition to an epitaxial phase that accounted for most of the surface area of the film. STM images of the film that revealed step heights expected for β-MoO 3 (0 0 1), along with RHEED results that revealed in-plane lattice constants consistent with β-MoO 3 , indicated that epitaxial β-MoO 3 films can be grown and that geometric matching to the substrate can stabilize the β phase at temperatures where it is not stable in the bulk.

Interfaces between minerals and water, and minerals and microbes, are chemically complex and traditionally have been considered beyond the capabilities of surface science techniques, except for model systems under controlled laboratory conditions. We report on some advances in soft x-ray spectroscopy and imaging that make it possible to extract meaningful chemical information about interfaces of specimens that have complex histories, involving environmental exposure. These measurements utilize x-ray absorption spectroscopy, in combination with spatial resolution, in a technique called x-ray spectromicroscopy. Examples are drawn from attempts at Mn and Fe speciation of biologically produced minerals, bio-corrosion deposits and clays.

We tested a new soft‐x‐ray transmission spectromiscropy technique on the Aladdin storage ring at the Wisconsin Synchrotron Radiation Center. Transmitted x rays were converted with a photocathode into photoelectrons, which were subsequently electron‐optically processed by an x‐ray secondary electron‐emission microscope producing submicron‐resolution images. Test images demonstrated the excellent contrast due to the chemical differences between silicon features and a silicon nitride substrate. We also obtained x‐ray transmission versus photon energy curves for microscopic specimen areas.

We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO2 (anatase)/SrTiO3/Si(001) system. The valence band offsets are −2.1±0.1 eV and +0.2±0.1 eV at the SrTiO3/Si and TiO2/SrTiO3 heterojunctions, respectively. Assuming bulk band gaps for the SrTiO3 and TiO2 epitaxial films, the associated conduction band offsets are +0.1±0.1 eV and +0.1±0.1 eV. Si at the interface is in a flatband state, indicating a very low density of electronic states. These results suggest that spin-polarized electron injection from ferromagnetic Co-doped TiO2 anatase into Si should be facile.

MnBi has attracted much attention in recent years due to its potential as a rare-earth-free permanent magnet material. It is unique because its coercivity increases with increasing temperature, which makes it a good hard phase material for exchange coupling nanocomposite magnets. MnBi phase is difficult to obtain, partly because the reaction between Mn and Bi is peritectic, and partly because Mn reacts readily with oxygen. MnO formation is irreversible and harmful to magnet performance. In this paper, we report our efforts toward developing MnBi permanent magnets. To date, high purity MnBi (>90%) can be routinely produced in large quantities. The produced powder exhibits 74.6 emu g(-1) saturation magnetization at room temperature with 9 T applied field. After proper alignment, the maximum energy product (BH)max of the powder reached 11.9 MGOe, and that of the sintered bulk magnet reached 7.8 MGOe at room temperature. A comprehensive study of thermal stability shows that MnBi powder is stable up to 473 K in air.

High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications. Although CdTe is zinc blende with cubic lattice constant a = 6.482 A while ZnO is hexagonal wurtzite with a = 3.253 A and c = 5.213 A, (001)-oriented cubic zinc blende ZnO films could be stabilized epitaxially on a CdTe (001) surface in an √2 × √2 R45° configuration with a lattice mismatch of

The authors report the magnetic and structural characteristics of epitaxial NiTiO3 films grown by pulsed laser deposition that are isostructural with acentric LiNbO3 (space group R3c). Optical second harmonic generation and magnetometry demonstrate lattice polarization at room temperature and weak ferromagnetism below 250 K, respectively. These results appear to be consistent with earlier predictions from first-principles calculations of the coexistence of ferroelectricity and weak ferromagnetism in a series of transition metal titanates crystallizing in the LiNbO3 structure. This acentric form of NiTiO3 is believed to be one of the rare examples of ferroelectrics exhibiting weak ferromagnetism generated by a Dzyaloshinskii–Moriya interaction.

Thin films of CsBr and KBr were deposited on Cu(100) to investigate photoemission properties of these potential photocathode materials. After prolonged laser ultraviolet irradiation photoemission, quantum efficiency increases by factors of 26 and 77 for KBr/Cu(100) and CsBr/Cu(100) photocathodes, respectively. Immediately following thin film deposition, a decrease in work function is observed, compared to bare Cu, in both cases. Quantum efficiency enhancements are attributed to the decrease in photocathode work function, and photo-induced processes that introduce defect states into the alkali halide bandgap. Our results suggest that KBr, a relatively stable alkali-halide, also has potential for photocathode applications.

Complex oxides exhibit a wide range of crystal structures, chemical compositions and physical properties. The underlying drivers determining the complicated structure–composition–property phase diagrams are the relative positions and orbital overlaps between the metal cations and the oxygen anions. Here we report a combined experimental and theoretical investigation of the structure and bonding in a series of lanthanum chromium oxides prepared by molecular beam epitaxy. Of particular interest is the charge state and local coordination of the Cr. We have stabilized LaCrO3, LaCrO4 and La2CrO6 films by controlling the three elemental fluxes during deposition, and have carried out X-ray diffraction, X-ray photoemission, and X-ray absorption spectroscopy, as well as first-principles calculations, to determine structure, charge state, chemical bonding, and electronic structure. Significant changes in bonding character and orbital interaction are revealed with decreasing ligand symmetry from octahedral to tetrahedral Cr coordination. Both LaCrO4 and La2CrO6 with tetrahedrally coordinated Cr show strong pre-edge features in the Cr K-edge near-edge structure whereas LaCrO3 with octahedrally coordinated Cr exhibits very weak pre-edge features. The origin of these pre-edge features is discussed based on various selection rules and ligand symmetry. We also demonstrate an increase in cation–anion orbital hybridization and a decrease in long-range ligand coupling induced by this symmetry reduction. These in turn result in dramatic modifications of the macroscopic optical and magnetic properties.

Growth of Ga-doped ZnO by pulsed laser deposition at 200 °C in an ambient of Ar and H2 produces a resistivity of 1.5 × 10−4 Ω-cm, stable to 500 °C. The resistivity can be further reduced to 1.2 × 10−4 Ω-cm by annealing on Zn foil, which reduces the compensating Zn-vacancy acceptor concentration NA to 5 × 1019 cm−3, only 3% of the Ga-donor concentration ND of 1.6 × 1021 cm−3, with ND and NA determined from a degenerate mobility theory. The plasmon-resonance wavelength is only 1060 nm, further bridging the gap between metals and semiconductors.

ZnO/Sn:In2O3 (ITO) heterojunctions were fabricated by pulsed laser deposition. Ex situ x-ray photoelectron spectroscopy (XPS) was utilized to examine the band structure and band alignments of ITO films and ZnO/ITO heterojunctions. The apparent bandgap of ITO films was found to be sensitive to oxygen plasma exposure, with an observed bandgap ∼3 eV. Type II band alignments were found for oxygen plasma treated ZnO/ITO heterojunctions with either pure ZnO, Al:ZnO, or Ga:ZnO overlayers. The conduction band offsets were in the range of −0.5 to −0.7 eV, which is a larger magnitude than desired for efficient devices. A strong effect of processing treatment, either exposure to the oxygen plasma or gentle heating in vacuum, was found for the band alignments; under some conditions, the conduction band offset reversed sign. Tuning of the processing parameters in photovoltaic or electronic devices may lead to an improvement in the ZnO/ITO alignment.

Band alignments were measured by x-ray photoelectron spectroscopy for thin films of ZnO on polycrystalline Sn:In2O3 (ITO) and single crystal CdTe. Hybrid density functional theory calculations of epitaxial zinc blende ZnO(001) on CdTe(001) were performed to compare with experiment. A conduction band (CB) offset of −0.6 eV was measured for ZnO/ITO, which is larger than desired for efficient electron injection. For ZnO/CdTe, the experimental conduction band offset of 0.25 eV is smaller than the calculated value of 0.67 eV, possibly due to the TeOx layer at the ZnO/CdTe interface. The measured conduction band offset for ZnO/CdTe is favorable for photovoltaic devices.

Little is currently known about the effects of gamma-ray irradiation on oxide magnet materials. In particular, the effect of particle size on radiationsusceptibility was investigated. Two commercial powders of BaFe12O19 were thoroughly characterized, then exposed to 1 MGy of gamma radiation from a 60Co source. ACsusceptibility and DC magnetometry and Mossbauer spectroscopy were performed after irradiation and compared to pre-irradiated measurements. DC magnetization and ACsusceptibility decreased for both samples with the relative change of DC magnetization being larger for the micrometer-sized particles and the relative change of the ACsusceptibility being larger for the nanometer-sized particles. Mossbauer spectroscopy indicated a decrease in both the hyperfine fields and in their distribution for each Fe site, particularly in the larger particle sample. Decreases in susceptibility are believed to be due to radiation-induced amorphization at the particle surfaces as well as amorphization and nucleation of new crystallites at internal crystallite boundaries, resulting in overall reduction in the particle magnetic moment. This radiation damage mechanism is different than that seen in previous studies of neutron and heavy ion irradiation of BaFe12O19.

Inequivalent angular distributions have been found for La and Al in the ablation plume from LaAlO3 single crystal targets using a KrF laser during pulsed laser deposition. Angular distributions and stoichiometries in the condensate were measured and reveal decidedly nonstoichiometric transfer from target to substrate over most of the angular range. Composition varied dramatically for plume angles parallel to the long axis of the laser spot with the on-axis position exhibiting a peak in the La/Al atom ratio at ∼1.5. The distributions were more diffuse in the perpendicular direction. Stoichiometric LaAlO3 was found in the condensate only at an extreme off-axis position.

Stoichiometric epitaxial LaAlO(3) grown on TiO(2)-terminated SrTiO(3)(001) by off-axis pulsed laser deposition is shown to exhibit strong cation intermixing. This result is corroborated by classical and quantum mechanical calculations of the relative stabilities of abrupt and intermixed interface configurations. The valence band offset was measured to be 0.16 ± 0.10 eV, and this value cannot be accounted for theoretically without including intermixing in the physical description of the interface.

The electrical resistivity values for a series of pure and doped (Co, Mn, Al) ZnO epitaxial films grown by pulsed laser deposition were measured with equipment designed for determining the direct current resistivity of high resistance samples. Room-temperature resistances ranging from 7 x 10(1) to 4 x 10(8) Omega/sq were measured on vacuum-reduced cobalt-doped ZnO, (Al,Co) co-doped ZnO, pure cobalt-doped ZnO, Mn-doped ZnO, and undoped ZnO. Using a four-point collinear geometry with gold spring-loaded contacts, resistivities were measured from 295 to 5 K for resistances of < approximately 10(12) Omega/sq. In addition, magnetoresistance and Hall effect were measured as a function of temperature for select samples. Throughout the investigation, samples were also measured on commercially available instrumentation with good agreement. The challenges of transport measurements on high resistivity samples are discussed, along with some offered solutions to those challenges.

We examine the crystal structure and electrical and optical properties of ZnO epitaxial films grown by pulsed laser deposition in a H2 or D2 ambient. n-type electrical conductivity is enhanced by three orders of magnitude as a result of growing in H2 (D2) compared to ZnO films grown in O2. Hall effect measurements reveal very small carrier activation energies and carrier concentrations in the mid-1018 cm−3 range. Optical absorption measurements show that the enhanced conductivity is not a result of ZnO reduction and interstitial Zn formation. Photoluminescence spectra suggest excitonic emission associated with exciton-hydrogen donor complex formation and show no evidence for midgap emission resulting from defects. We have modeled the transport properties of H (D) doped ZnO films using variable range hopping and surface layer conductivity models, but our data do not fit well with these models. Rather, it appears that growth in H2 (D2) promotes the formation of an exceedingly shallow donor state not seen in...

ZnO epitaxial films grown by pulsed laser deposition in an ambient of H2 or D2 exhibit qualitatively different electronic properties compared to films grown in vacuum or O2 or bulk single crystals annealed in H2. These include temperature-independent resistivities of ∼0.1Ωcm, carrier (electron) concentrations in the 1018cm−3 range, mobilities of 20–40cm2∕Vs, and negligible (a few meV) activation energies for conduction. These transport properties are consistent with H (D) forming an ultrashallow donor or conduction band states not achievable by postgrowth annealing in H2.