1. Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
- Author
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Michel Pons, Michel Mermoux, Roland Madar, Jean-Marie Bluet, M Anikin, Etienne Pernot, Didier Chaussende, I. El Harrouni, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), NOVASIC, NOVASiC, Laboratoire de thermodynamique et physico-chimie métallurgiques (LTPCM), and Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)
- Subjects
010302 applied physics ,Materials science ,Photoluminescence ,business.industry ,Mechanical Engineering ,Synchrotron topography ,scanning photoluminescence ,[CHIM.MATE]Chemical Sciences/Material chemistry ,Condensed Matter Physics ,01 natural sciences ,Synchrotron ,law.invention ,010309 optics ,symbols.namesake ,Mechanics of Materials ,law ,0103 physical sciences ,Raman spectroscopy ,symbols ,Optoelectronics ,General Materials Science ,business ,Spectroscopy - Abstract
International audience; Reflection synchrotron topography, integrated photoluminescence imaging and Raman spectroscopy imaging have been performed on a 4H-SiC slice. The three methods give complementary information on the defects in the crystal. The differences between the observations are discussed.
- Published
- 2003
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