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Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS2, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.

Black phosphorus (BP) is a typical two-dimensional (2D) layered material with strong in-plane anisotropy and large birefringence, making it possible to manipulate the light field with atomically controlled devices for various optoelectronic and photonic applications-for instance, atomic thickness waveplates. The twist angle in twisted black phosphorus (TBP) can be presented as a new tunable dimension to control BP's optical anisotropy. Here, we report a large and tunable optical rotation effect in TBP, the result of regulating the twist angle and BP thickness. To accurately study the optical rotation and the impact of the twist angle, we developed a new method to prepare TBP. A lab-made polarimeter microscope was used to visualize the optical rotation mapping of TBP. A large polarization-plane rotation (PORA) of 0.49° per atomic layer was observed from an air/BP/SiO2/Si Fabry-Perot cavity at 600 nm, an order of magnitude higher than the PORA of 0.05° per atomic layer reported earlier. For the same thickness, the PORA of TBP can be tuned from 0.48° to 7.75° based on the twist angle from 0° to 90°. Our work provides an efficient method to investigate the anisotropy of 2D materials and their heterojunctions. TBP could help us design novel optical and optoelectronic devices such as tunable nanoscale polarization controllers.

Achieving multifunctional van der Waals nanoelectronic devices on one structure is essential for the integration of 2D materials; however, it involves complex architectural designs and manufacturing processes. Herein, a facile, fast, and versatile laser direct write micro/nanoprocessing to fabricate diode, NPN (PNP) bipolar junction transistor (BJT) simultaneously based on a pre-fabricated black phosphorus/molybdenum disulfide heterostructure is demonstrated. The PN junctions exhibit good diode rectification behavior. Due to different carrier concentrations of BP and MoS2 , the NPN BJT, with a narrower base width, renders better performance than the PNP BJT. Furthermore, the current gain can be modulated efficiently through laser writing tunable base width WB , which is consistent with the theoretical results. The maximum gain for NPN and PNP is found to be ≈41 (@WB ≈600 nm) and ≈12 (@WB ≈600 nm), respectively. In addition, this laser write processing technique also can be utilized to realize multifunctional WSe2 /MoS2 heterostructure device. The current work demonstrates a novel, cost-effective, and universal method to fabricate multifunctional nanoelectronic devices. The proposed approach exhibits promise for large-scale integrated circuits based on 2D heterostructures.

van der Waals p-n heterostructures based on p-type black phosphorus (BP) integrated with other two-dimensional (2D) layered materials have shown potential applications in electronic and optoelectronic devices, including logic rectifiers and polarization-sensitive photodetectors. However, the engineering of carriers transport anisotropy, which is related to the linear dichroism, have not yet been investigated. Here, we demonstrate a novel van der Waals device of orientation-perpendicular BP homojunction based on the anisotropic band structures between the armchair and zigzag directions. The structure exhibits good gate-tunable diode-like rectification characteristics caused by the barrier between the two perpendicular crystal orientations. Moreover, we demonstrate that the unique mechanisms of the polarization-sensitivity properties of this junction are involved with the linear dichroism and the anisotropic carriers transport engineering. These results were verified by the scanning photocurrent images experiments. This work paves the way for 2D anisotropic layered materials for next-generation electronic and optoelectronic devices.

The substrate effect is an important issue in the properties of two-dimensional transition metal dichalcogenides (2D TMDs). Quantitatively determining the dependence of the photoluminescence (PL) emission properties and the excitonic behavior of single-layer 2D materials in a specific dielectric environment would provide helpful guidance for the rational design of substrates for high performance 2D TMD PL emission devices. Here, using a WSe2 monolayer on different substrates as a model system, it is demonstrated that the PL emission intensities can drastically change depending on the substrate effect. From the analysis of the excitonic behavior, the results reveal that the spectral weight between the neutral and charged excitons in the PL spectra is significantly modified by the substrate types, and the weight factor is dependent on the laser excitation density. The charged exciton binding energy is obviously negatively related to the substrate dielectric constant. Furthermore, the change trends of the binding energy of the monolayer WSe2 on different substrates are basically the same for the increase of the excitation density. These results suggest that the choice of the substrate plays a significant role in the modulation of the PL properties and exciton states of atomically thin WSe2; hence, substrate engineering should be carefully considered in the design of future 2D devices.