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1. Features of Tunneling Current in Superlattices with Electrical Domains

Author

Roland Teissier, Alexei N. Baranov, I. V. Altukhov, A. A. Usikova, Miron S. Kagan, I. A. Kohn, N. D. Il’inskaya, N. A. Khvalkovskiy, S. K. Paprotskiy, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Phonon, Superlattice, media_common.quotation_subject, 02 engineering and technology, 01 natural sciences, Asymmetry, Condensed Matter::Materials Science, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, Quantum well, Quantum tunnelling, media_common, 010302 applied physics, Radiation, Condensed matter physics, 020206 networking & telecommunications, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Electronic, Optical and Magnetic Materials, Hysteresis, Maxima, Voltage
Abstract

—The tunneling electron transport in GaAs/AlAs and InAs/AlSb superlattices with electric domains at room temperature is studied. At voltages above the threshold for the formation of domains, a series of maxima on the current–voltage characteristics, almost equidistant in voltage, and current hysteresis during direct and reverse voltage sweeps were found. An explanation is proposed relating the origin of these maxima to tunnel transitions between quantum wells in a triangular domain, assisted by the emission of optical phonons, and hysteresis with a transition between modes with a moving and static domain. The large asymmetry of the transition times between domain modes was found.

Published
2019

2. Study of resonant transport in InAs-based quantum hot electron transistors

Author

Roland Teissier, Alexei N. Baranov, M. Zaknoune, H. Nguyen Van, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), The authors thank the support of French Agence Nationale de la Recherche under the program TACHUS2 (Grant No. ANR-08-BLANC-0299), and ANR-08-BLAN-0299,TACHUS2,Transistors à électrons chauds ultra-rapide à base d'InAs(2008)

Subjects
Materials science, General Physics and Astronomy, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, 7. Clean energy, law.invention, Computer Science::Hardware Architecture, [SPI]Engineering Sciences [physics], Computer Science::Emerging Technologies, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Breakdown voltage, Quantum, Quantum tunnelling, ComputingMilieux_MISCELLANEOUS, Common emitter, 010302 applied physics, business.industry, Transistor, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Hot electron transistors, lcsh:QC1-999, Optoelectronics, Physics::Accelerator Physics, Current (fluid), 0210 nano-technology, business, lcsh:Physics
Abstract

A study of transport in a quantum hot electron transistor made of an InAs/AlSb heterostructure is reported. It exhibited that the quantum hot electron transistors with a thick emitter efficiently prevented the parasitic base currents compared with transistors with a thin emitter. The static characteristics of the fabricated devices demonstrated an enhancement of the current gain of 9 and a collector breakdown voltage of 1.5 V with thick-emitter designed transistors. In optimized devices, the current is dominated by fast resonant tunneling that is promising for their future development of as high frequency transistors.

Published
2020

3. Strong optical coupling between semiconductor microdisk lasers: From whispering gallery modes to collective modes

Author

Alexei N. Baranov, Mikhail Roiz, Roland Teissier, A. M. Monakhov, E.V. Kunitsyna, Yury P. Yakovlev, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), University of Helsinki, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Department of Chemistry

Subjects
116 Chemical sciences, General Physics and Astronomy, Physics::Optics, 02 engineering and technology, 01 natural sciences, Optical coupling, law.invention, RESONATORS, law, 0103 physical sciences, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Physics, Coupling, [PHYS]Physics [physics], business.industry, Single-mode optical fiber, Mode (statistics), Resonance, 021001 nanoscience & nanotechnology, Laser, Semiconductor, Optoelectronics, Whispering-gallery wave, 0210 nano-technology, business
Abstract

In the present paper, we investigate a special type of optical coupling between two electrically pumped semiconductor whispering gallery mode lasers. We fabricate microdisk lasers with a conjunction between the laser cavities, making the coupling stronger. Our experimental results combined with numerical calculations demonstrate a variety of mode families that exist in such systems. Furthermore, we confirm the generation of resonance modes that exist only under simultaneous pumping conditions. These modes are attributed to the collective mode family, which can lead to a single mode operation.

Published
2020

4. InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

Author

Roland Teissier, Laurent Cerutti, A. Meguekam, Michael Bahriz, Jean-Baptiste Rodriguez, Alexei N. Baranov, M. Rio-Calvo, Eric Tournié, Zeineb Loghmari, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
lcsh:Applied optics. Photonics, Materials science, Threshold current, Silicon, Computer Networks and Communications, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, 7. Clean energy, law.invention, 010309 optics, Operating temperature, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum, business.industry, lcsh:TA1501-1820, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, chemistry, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Photonics, 0210 nano-technology, business
Abstract

International audience; We present InAs/AlSb quantum cascade lasers (QCLs) monolithically integrated on an on-axis (001) Si substrate. The lasers emit near 8 μm with threshold current densities of 0.92-0.95 kA/cm 2 at 300 K for 3.6-mm-long devices and operate in pulsed mode up to 410 K. QCLs of the same design grown for comparison on a native InAs substrate demonstrated a threshold current density of 0.75 kA/cm 2 and the same maximum operating temperature. The low threshold current density of the QCLs grown on Si makes them suitable for photonic integrated sensor implementation.

Published
2020
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5. Stable and Unstable Spatial Modes in a Resonator with a Half-Disk Shape

Author

Prokhor A. Alekseev, Grigorii S. Sokolovskii, Mikhail S. Dunaevskiy, Roland Teissier, A. M. Monakhov, Richard Arinero, Alexei N. Baranov, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Work (thermodynamics), Geometrical optics, 02 engineering and technology, Visible radiation, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electromagnetic radiation, Atomic and Molecular Physics, and Optics, Electronic equipment, Electronic, Optical and Magnetic Materials, Resonator, Wavelength, Photon emission, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Atomic physics, 010306 general physics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

This work was devoted to the study of stable and unstable optical modes in segment shaped resonators. The size of the studied resonators was much larger than the wavelength of the emitted light, that allowed to use the approaches of geometric optics. It was observed, that with an increase in the δ/R deviation parameter (where δ is the deviation from the center of the half-disk) only a small number of stable spatial modes remain. The possibility of the existence of “sealed” (non-radiating modes) and “open” modes (radiating modes) in resonators of this type was also shown.

Published
2018

6. Long wavelength (λ = 10 - 18 μm) mid-IR quantum cascade lasers operating in a continuous wave at room temperature

Author

F. Barho, Hadrien Philip, Michael Bahriz, Z. Loghmari, Roland Teissier, and Alexei N. Baranov

Subjects
Range (particle radiation), Materials science, business.industry, Terahertz radiation, Physics::Optics, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, 010309 optics, Long wavelength, Wavelength, Cascade, law, 0103 physical sciences, Continuous wave, Optoelectronics, 0210 nano-technology, business, Quantum
Abstract

We report a study of quantum cascade lasers (QCL), made of InAs and AlSb, operating in the long wavelength mid-infrared range. Lasers based on a design with slightly diagonal intersubband transitions demonstrated improved performances as compared to the previously reported devices employing a vertical scheme. The fabricated lasers operated in the CW regime at 40°C up to a wavelength of 18 μm.

Published
2019

7. Terahertz quantum cascade laser with non-resonant extraction

Author

Zeineb Loghmari, Alexei N. Baranov, Michael Bahriz, H. Nguyen-Van, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Terahertz radiation, Phonon, General Physics and Astronomy, Physics::Optics, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, Gallium arsenide, chemistry.chemical_compound, Operating temperature, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Laser, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, lcsh:QC1-999, chemistry, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Waveguide, lcsh:Physics
Abstract

In order to improve the maximum operating temperature of THz quantum cascade lasers (QCLs) we propose to modify the three well resonant phonon design by increasing the energy of the separation between the bottom transition levels and the ground states, which is usually adjusted to the LO-phonon energy in GaAs. The fabricated devices based on this design with non-resonant depopulation of the bottom transition level operated in pulsed mode up to 190K, which is the best-reported performance for THz QCLs with Al0.15Ga0.85As barriers based on an Au-Au double-metal waveguide. The performed analysis showed that the achieved improvement could be explained by the proposed design modification.In order to improve the maximum operating temperature of THz quantum cascade lasers (QCLs) we propose to modify the three well resonant phonon design by increasing the energy of the separation between the bottom transition levels and the ground states, which is usually adjusted to the LO-phonon energy in GaAs. The fabricated devices based on this design with non-resonant depopulation of the bottom transition level operated in pulsed mode up to 190K, which is the best-reported performance for THz QCLs with Al0.15Ga0.85As barriers based on an Au-Au double-metal waveguide. The performed analysis showed that the achieved improvement could be explained by the proposed design modification.

Published
2019

8. Antimonide-based optoelectronic devices grown on Si substrates (Conference Presentation)

Author

Alexei N. Baranov, Philippe Christol, Jean-Baptiste Rodriguez, Roland Teissier, Eric Tournié, Laurent Cerutti, Jean-Philippe Perez, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Materials science, business.industry, media_common.quotation_subject, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 010309 optics, [SPI]Engineering Sciences [physics], Presentation, 0103 physical sciences, Antimonide, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy, media_common
Abstract

International audience

Published
2019

9. Off-beam QEPAS sensor using an 11-μm DFB-QCL with an optimized acoustic resonator

Author

Michael Bahriz, Roman Rousseau, Kaim Chamassi, Alexei N. Baranov, Zeineb Loghmari, Aurore Vicet, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Detection limit, Materials science, Mems microphone, business.industry, Stray light, Photoacoustic imaging in biomedicine, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Atomic and Molecular Physics, and Optics, law.invention, 010309 optics, Resonator, [SPI]Engineering Sciences [physics], Optics, law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Quantum cascade laser, business, Photoacoustic spectroscopy, Beam (structure), ComputingMilieux_MISCELLANEOUS
Abstract

An off-beam quartz-enhanced photoacoustic spectroscopy (QEPAS) sensor was designed for ethylene detection using a distributed-feedback quantum cascade laser (QCL) operating in the mid-infrared around 11 μm. The acoustic microresonator configuration was experimentally optimized using an original open-cell photoacoustic setup with a MEMS microphone. Correction factors based on theoretical acoustic models were introduced in order to accurately describe the response of millimeter-sized acoustic resonators. The optimized QEPAS sensor exhibited a limit of detection of 60 ppb for 60 s integration, giving a NNEA of 4.8 × 10−8 W·cm−1·Hz-0.5.

Published
2019

10. Epsilon near-zero all-optical terahertz modulator

Author

Alexei N. Baranov, E. Alvear-Cabezon, Emmanuel Centeno, Stéphane Blin, R. Smaali, Roland Teissier, Thierry Taliercio, F. Gonzalez-Posada, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Clermont Auvergne [2017-2020] (UCA [2017-2020]), Institut Pascal (IP), and SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Terahertz radiation, business.industry, Attenuation, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, Amplitude modulation, Semiconductor, Transmission (telecommunications), Modulation, law, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Irradiation, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; We propose an efficient optically actuated THz modulator based on an ultrathin epsilon-near-zero (ENZ) slab photogenerated in an InAs semiconductor. We experimentally demonstrate a modulation depth of 90% at 1 THz obtained with a continuous laser at irradiation lower than 10 W cm À2. Beyond the strong attenuation of the THz transmission provided by the ENZ absorption effect, we also report a broadband modulation of the THz waves from 1 to 10 THz. In addition, our experimental results show that the cutoff frequency of 3 dB attains 2 MHz in the dynamic modulation regime.

Published
2020

11. Room temperature continuous wave operation of InAs/AlSb-based quantum cascade laser at λ ∼11 µm

Author

H. Nguyen Van, Michael Bahriz, Andrey N. Baranov, A. Meguekam, D. Díaz Thomas, Roland Teissier, Zeineb Loghmari, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 7. Clean energy, 01 natural sciences, law.invention, 010309 optics, Resonator, [SPI]Engineering Sciences [physics], Cascade, law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Continuous wave, Optoelectronics, Wafer, Electrical and Electronic Engineering, 0210 nano-technology, Quantum cascade laser, business, Current density, Quantum, ComputingMilieux_MISCELLANEOUS
Abstract

The InAs/AlSb quantum cascade lasers (QCLs) operating ∼11 µm in the continuous wave (cw) regime at room temperature are reported. The lasers with cleaved Fabry–Perot resonators demonstrated pulsed threshold current densities below 1 kA/cm2 at 300 K and operated in a cw up to 320 K that is the maximum temperature of such regime of operation for InAs-based QCLs. Distributed feedback lasers fabricated from the same wafer exhibited single frequency emission near 11 µm and operated in the cw regime up to 295 K.

Published
2018

12. Half-disk laser: insight into the internal mode structure of laser resonators

Author

Alexei N. Baranov, Vladislav V. Dudelev, A. M. Monakhov, Prokhor A. Alekseev, Richard Arinero, Mikhail S. Dunaevskiy, Grigorii S. Sokolovskii, Roland Teissier, Institut d’Electronique et des Systèmes ( IES ), Université de Montpellier ( UM ) -Centre National de la Recherche Scientifique ( CNRS ), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Geometrical optics, business.industry, Physics::Optics, Near and far field, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, Atomic and Molecular Physics, and Optics, law.invention, Resonator, [SPI]Engineering Sciences [physics], Optics, law, Optical cavity, 0103 physical sciences, [ SPI ] Engineering Sciences [physics], Disk laser, Emission spectrum, Whispering-gallery wave, 010306 general physics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

Usually electromagnetic modes inside a laser resonator are a matter of the theoretical studies. In a sense we manage "to have a look into a whispering gallery mode (WGM) resonator" and observe how the resonator modes arrange in reality. The picture occurs to be quite different from the commonly used Bessel modes in a disk resonator. A chance to explore optical modes inside a resonator appears in a WGM laser with a cleaved cavity. The flat laser facet gives an opportunity to study both far and near field patterns formed by different modes. In this research we use a high resolution technique of detection of laser emission based on an atomic force microscope, which allowed us to visualize even high Q modes normally sealed inside the resonator. This information was completed with spatially resolved emission spectra and far-field patterns measured using an infrared camera. The analysis of the obtained results using both wave and geometrical optics approaches and finite elements simulations showed that emission of the studied devices is governed by a few low order optical modes experiencing a small number of reflections from the resonator walls. These modes can be considered as counter propagating Gaussian beams and their interference at the laser facet was also observed in the experiment. This work showed that, contrary to conventional ridge or surface emitting lasers, in such deformed disk resonators outputs of different optical modes are spatially separated and can be studied individually along the cleaved facet of the laser.

Published
2018

13. Intersubband polaritons at λ ∼ 2 μ m in the InAs/AlSb system

Author

L. Le Gratiet, Raffaele Colombelli, Jean-Michel Manceau, Adel Bousseksou, T. Laurent, Roland Teissier, Alexei N. Baranov, Pierre Laffaille, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, [PHYS]Physics [physics], Physics and Astronomy (miscellaneous), business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 0103 physical sciences, Polariton, Optoelectronics, 010306 general physics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

14. Epitaxial Integration of Antimonide-Based Semiconductor Lasers on Si

Author

Alexei N. Baranov, Laurent Cerutti, Jean-Baptiste Rodriguez, Roland Teissier, Eric Tournié, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-11-EQPX-0016,EXTRA,Centre d'Excellence sur les Antimoniures(2011), ANR-12-BS03-0002,OPTOSI,Intégration par épitaxie de composants optoélectroniques III-V sur Si(2012), and ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, business.industry, Nucleation, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, Epitaxy, 01 natural sciences, Semiconductor laser theory, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Antimonide, Optoelectronics, Continuous wave, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

We review the recent achievements in the epitaxial integration of III-Sb-based semiconductor lasers on Si substrates. Much work has been done on substrate preparation and III-Sb on Si nucleation, which allowed demonstrating GaInAsSb/AlGaAsSb quantum-well laser diodes operating in continuous wave above room temperature in the 1.5–2.3 μm range and InAs/AlSb quantum cascade lasers emitting near 11 μm operating up to 400 K. Although work remains to be done, in particular toward crystal defect density reduction, the wide wavelength range at reach with the III-Sb technology opens the way to the development of a large portfolio of mid-IR sensing systems.

Published
2018

15. Spatial mode structure in a half-disk cavity laser

Author

Alexei N. Baranov, Mikhail S. Dunaevskiy, A. M. Monakhov, Roland Teissier, Vladislav V. Dudelev, Grigorii S. Sokolovskii, and Prokhor A. Alekseev

Subjects
010302 applied physics, Materials science, business.industry, 02 engineering and technology, Laser pumping, Injection seeder, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, Optics, law, Quantum dot laser, 0103 physical sciences, Optoelectronics, Laser power scaling, Whispering-gallery wave, 0210 nano-technology, business, Quantum well, Tunable laser
Abstract

We experimentally and theoretically examined the mode structure of half-disk lasers fabricated by cleaving whispering gallery mode (WGM)-disk lasers. The WGM lasers with a radii R of 50–150 μm emitting near 2.2 μm were fabricated using the GaSb-based quantum well structure [1]. The cleavage usually passes not through the centre of the disk with the deviation δ/R up to 20 % (Fig. 1a). Recently we have demonstrated that in the half-disk lasers the output beam is formed by optical modes located at a distance of 5–20 μm from the disk periphery [2], whereas in the full disk the light propagates along the disk wall, much closer to its edges.

Published
2017

16. Continuous wave operation of InAs-based quantum cascade lasers at 20 μm

Author

Alexei N. Baranov, A. Meguekam, H. Nguyen Van, Roland Teissier, Z. Loghmari, Michael Bahriz, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Threshold current, Physics and Astronomy (miscellaneous), business.industry, Physics::Optics, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, Cladding (fiber optics), 7. Clean energy, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], Cascade, law, Optical cavity, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Pulsed mode, Continuous wave, Optoelectronics, 0210 nano-technology, business, Quantum
Abstract

International audience; We report low threshold continuous wave (CW) operation of InAs/AlSb quantum cascade lasers emitting around 20 lm. The laser cavity was made of a plasmon-enhanced dielectric waveguide with cladding layers made of n-InAs. The devices exhibited a threshold current density of 1.38 kA/cm 2 at the maximum temperature of CW operation of 240 K and an output power of 14 mW/facet at T ¼ 80 K. In pulsed mode, the lasers operated up to 380 K with a threshold current density of 1.15 kA/cm 2 at room temperature.

Published
2019

17. Long Wavelength (λ > 17 µm) Distributed Feedback Quantum Cascade Lasers Operating in a Continuous Wave at Room Temperature

Author

Alexei N. Baranov, Michael Bahriz, Zeineb Loghmari, Hadrien Philip, Hoang Nguyen Van, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
lcsh:Applied optics. Photonics, Materials science, Physics::Optics, quantum cascade laser, 02 engineering and technology, 01 natural sciences, law.invention, Semiconductor laser theory, 010309 optics, law, 0103 physical sciences, Radiology, Nuclear Medicine and imaging, Instrumentation, Quantum, long wavelength infrared, business.industry, Single-mode optical fiber, lcsh:TA1501-1820, distributed feedback, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Wavelength, Cascade, molecular spectroscopy, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Continuous wave, Optoelectronics, 0210 nano-technology, Quantum cascade laser, business
Abstract

International audience; The extension of the available spectral range covered by quantum cascade lasers (QCL) would allow one to address new molecular spectroscopy applications, in particular in the long wavelength domain of the mid-infrared. We report in this paper the realization of distributed feedback (DFB) QCLs, made of InAs and AlSb, that demonstrated a continuous wave (CW) and a single mode emission at a wavelength of 17.7 µm, with output powers in the mW range. This is the longest wavelength for DFB QCLs, and for any QCLs or semiconductor lasers in general, operating in a CW at room temperature.

Published
2019

18. Room temperature continuous wave operation of InAs-based quantum cascade lasers at 15 micron

Author

Alexei N. Baranov, Michael Bahriz, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Semiconductor laser theory, law.invention, 010309 optics, Condensed Matter::Materials Science, [SPI]Engineering Sciences [physics], Optics, Far infrared, law, 0103 physical sciences, Quantum well, business.industry, Doping, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Magnetic field, Cascade, Optoelectronics, Continuous wave, 0210 nano-technology, business
Abstract

International audience; We report low threshold InAs/AlSb quantum cascade lasers emitting near 15 micron. The devices are based on a vertical design similar to those employed previously in far infrared InAs-based QCLs, whereas the doping level of the active core is considerably decreased. The lasers exhibit a threshold current density as low as 730 A/cm(2) in pulsed mode at room temperature and can operate in this regime up to 410K. The continuous wave regime of operation has been achieved in these devices at temperatures up to 20 degrees C. The cw regime is demonstrated for InAs-based QCLs for the first time at room temperature.

Published
2016

19. AFM visualization of half-disk WGM laser modes

Author

Mikhail S. Dunaevskiy, Grigorii S. Sokolovskii, A. M. Monakhov, Alexei N. Baranov, Vladislav V. Dudelev, Prokhor A. Alekseev, and Roland Teissier

Subjects
010302 applied physics, Materials science, business.industry, Physics::Optics, Cleavage (crystal), 02 engineering and technology, Laser pumping, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, Visualization, Optics, law, 0103 physical sciences, Microscopy, Physics::Atomic Physics, Laser power scaling, Whispering-gallery wave, 0210 nano-technology, business, Tunable laser
Abstract

By means of atomic force microscopy (AFM) the spatial mapping of the laser intensity was performed on the cleavage of the whispering gallery modes (WGM) half-disk laser. The study was carried out in the near- and far-field regime. It showed a strong spatial divergence of different modes in the laser.

Published
2016

20. Apertureless SPM method of light detection

Author

A. Dontsov, Philippe Girard, Prokhor A. Alekseev, Alexei N. Baranov, Roland Teissier, A. M. Monakhov, Richard Arinero, Mikhail S. Dunaevskiy, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Microscope, Infrared, Astrophysics::Cosmology and Extragalactic Astrophysics, 02 engineering and technology, 01 natural sciences, Electromagnetic radiation, law.invention, Scanning probe microscopy, Optics, law, 0103 physical sciences, Mechanical resonance, Astrophysics::Galaxy Astrophysics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], business.industry, Resonance, 021001 nanoscience & nanotechnology, Laser, Optoelectronics, Astrophysics::Earth and Planetary Astrophysics, 0210 nano-technology, business, Lasing threshold
Abstract

We demonstrate the effect of infrared (IR) illumination on mechanical resonance frequency of scanning probe microscope (SPM) probe. The analytical estimations permit to relate the observed effect with the SPM-probe heating by IR-radiation. This effect can be used for the SPM mapping of IR-radiation spatial distribution on the emitting surfaces. The proposed method demonstrates high sensitivity to the infrared radiation and lateral resolution in the sub-micron range. It was applied to visualize complex spatial structure of lasing modes on the mirror of whispering-gallery mode GaSb/GaAlAsSb/GaInAsSb laser.

Published
2016

21. Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasers

Author

Christophe Gatel, Julien Nicolai, Anne Ponchet, Alexei N. Baranov, Bénédicte Warot-Fonrose, César Magén, Roland Teissier, Surfaces, Interfaces et Nano-Objets (CEMES-SINanO), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), University of Zaragoza - Universidad de Zaragoza [Zaragoza], ANR-11-BS10-0017,NAIADE,Nanocaractérisation et modélisation d'Antimoniures d'éléments III : Interfaces et Analyse des Déformations d'Epitaxie(2011), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Dark field microscopy, [SPI.TRON]Engineering Sciences [physics]/Electronics, Transmission electron microscopy, 0103 physical sciences, Microscopy, Scanning transmission electron microscopy, 0210 nano-technology, High-resolution transmission electron microscopy, ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy
Abstract

InAs/AlSb multilayers similar to those used in quantum cascade lasers have been grown by molecular beam epitaxy on (001) InAs substrates. Elastic strain is investigated by high resolution transmission electron microscopy. Thin interfacial regions with lattice distortions significantly different from the strain of the AlSb layers themselves are revealed from the geometrical phase analysis. Strain profiles are qualitatively compared to the chemical contrast of high angle annular dark field images obtained by scanning transmission electron microscopy. The strain and chemical profiles are correlated with the growth sequences used to form the interfaces. Tensile strained AlAs-like interfaces tend to form predominantly due to the high thermal stability of AlAs. Strongly asymmetric interfaces, AlAs-rich and (Al, In)Sb, respectively, can also be achieved by using appropriate growth sequences.

Published
2016

22. Frequency-tuned semiconductor whispering-gallery-mode laser (λ = 2.35 µm) operating at room temperature

Author

A. P. Astakhova, Andrey N. Baranov, A. M. Monakhov, M. A. Sipovskaya, Guilhem Boissier, K. V. Kalinina, A. N. Imenkov, V. V. Sherstnev, E. A. Grebenshchikova, Roland Teissier, Yu. P. Yakovlev, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), business.industry, Laser, 01 natural sciences, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, 010309 optics, Wavelength, Semiconductor, Optics, law, 0103 physical sciences, Optoelectronics, Whispering-gallery wave, Current (fluid), business, ComputingMilieux_MISCELLANEOUS
Abstract

Frequency tuning in a whispering gallery mode (WGM) semiconductor laser (λ = 2.35 µm) with a sector (half-disk) cavity has been studied. Pumping by current pulses with a duration of up to 1.2 µs is accompanied by smooth tuning of the main WGM toward longer wavelengths by 30 A at room temperature, which is 1.4 times the intermode distance.

Published
2009

23. QUANTUM EFFICIENCY OF A 2-LEVEL <font>InAs/AlSb</font> QUANTUM CASCADE STRUCTURE

Author

Clément Faugeras, D. Barate, Aaron Wade, Alexei N. Baranov, J. Devenson, A. Leuliet, Georgy Fedorov, Dmitry Smirnov, Angela Vasanelli, Roland Teissier, Carlo Sirtori, Laboratoire Matériaux et Phénomènes Quantiques (MPQ (UMR_7162)), Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), National High Magnetic Field Laboratory (NHMFL), Florida State University [Tallahassee] (FSU), Laboratoire National des Champs Magnétiques Pulsés (LNCMP), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratoire des champs magnétiques intenses (LCMI-GHMFL), Centre National de la Recherche Scientifique (CNRS), Thales Research and Technology [Palaiseau], THALES, Aquatic Environments Research Centre, University of Reading (UOR), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS), and THALES [France]

Subjects
magneto-phonon resonance, 02 engineering and technology, Electron, Inelastic scattering, 7. Clean energy, 01 natural sciences, Effective mass (solid-state physics), 0103 physical sciences, Radiative transfer, 010306 general physics, ComputingMilieux_MISCELLANEOUS, Physics, Condensed matter physics, Scattering, Quantum cascade, InAs/AlSb, Statistical and Nonlinear Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Magnetic field, Excited state, Quantum efficiency, Atomic physics, 0210 nano-technology
Abstract

International audience; The quantum efficiency of an electroluminescent intersubband emitter based on InAs/AlSb has been measured as a function of the magnetic field up to 20T. Two series of oscillations periodic in 1/B are observed, corresponding to the elastic and inelastic scattering of electrons of the upper state of the radiative transitions. Experimental results are accurately reproduced by a calculation of the excited state lifetime as a function of the applied magnetic field. The interpretation of these data gives an exact measure of the relative weight of the scattering mechanisms and allows the extraction of material parameters such as the energy dependent electron effective mass and the optical phonon energy

Published
2007

24. Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

Author

César Magén, Alexei N. Baranov, Julien Nicolai, Christophe Gatel, Bénédicte Warot-Fonrose, Roland Teissier, Anne Ponchet, Surfaces, Interfaces et Nano-Objets (CEMES-SINanO), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), University of Zaragoza - Universidad de Zaragoza [Zaragoza], ANR-11-BS10-0017,NAIADE,Nanocaractérisation et modélisation d'Antimoniures d'éléments III : Interfaces et Analyse des Déformations d'Epitaxie(2011), European Project: 312483, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie de Toulouse (ICT-FR 2599), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, business.industry, Resolution (electron density), Analytical chemistry, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, PACS numbers: 68.60.Bs , 68.37.Lp , 68.35.Ct , 68.65.Fg, Annular dark-field imaging, Transmission electron microscopy, law, 0103 physical sciences, Microscopy, Optoelectronics, numbers: 6860Bs, Thermal stability, Electron microscope, 0210 nano-technology, business, PACS: 68.60.Bs , 68.37.Lp , 68.35.Ct , 68.65.Fg, Molecular beam epitaxy
Abstract

International audience; Structural and chemical properties of InAs/AlSb interfaces have been studied by transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam epitaxy with different growth sequences at interfaces. The out-of-plane strain, determined using high resolution microscopy and geometrical phase analysis, has been related to the chemical composition of the interfaces analyzed by High Angle Annular Dark Field imaging. Considering the local strain and chemistry, we estimated the interface composition and discussed the mechanisms of interface formation for the different growth sequences. In particular, we found that the formation of the tensile AlAs-type interface is spontaneously favored due to its high thermal stability compared to the InSb-type interface. We also showed that the interface composition could be tuned using an appropriate growth sequence.

Published
2015

25. Micro and nanostructured substrates for DNA fibers combing by forced dewetting

Author

Benoit Charlot, Etienne Schwob, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Matériaux, MicroCapteurs et Acoustique (M2A), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Institut de Génétique Moléculaire de Montpellier (IGMM), and Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)

Subjects
Materials science, [SDV.BIO]Life Sciences [q-bio]/Biotechnology, Capillary action, Substrate (chemistry), Nanotechnology, 02 engineering and technology, Combing, engineering.material, Flat glass, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Coating, engineering, Deposition (phase transition), A-DNA, Dewetting, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

Deposition of elongated DNA fibers can be made by forced dewetting of a DNA solution droplet over a substrate. This technique, called molecular combing allows uncoiling and deposition of DNA fragments on flat glass substrates with the need of a physicochemical anchoring of molecule ends through specific coating of the substrate. Capillary force from a receding meniscus, acting on the coiled part of the molecule allows the elongation of the latter. The use of micro or nanostructured substrates within the same dewetting procedure allows to guide the deposition or to initiate, through a liquid pinning effect to uncoil the molecule without any physicochemical binding.

Published
2015

26. Apertureless scanning microscope probe as a detector of semiconductor laser emission

Author

Alexander Titkov, Paul Girard, Richard Arinero, Anton Dontsov, Mikhail S. Dunaevskiy, Roland Teissier, Alexei N. Baranov, Prokhor A. Alekseev, Andrei Monakhov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Médialab (Sciences Po) (Médialab), and Sciences Po (Sciences Po)

Subjects
010302 applied physics, Scanning Hall probe microscope, Distributed feedback laser, Physics and Astronomy (miscellaneous), Chemistry, business.industry, Far-infrared laser, Physics::Optics, Near and far field, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, Semiconductor laser theory, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Scanning probe microscopy, Optics, law, 0103 physical sciences, Microscopy, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

An operating semiconductor laser has been studied using a scanning probe microscope. A shift of the resonance frequency of probe that is due to its heating by laser radiation has been analyzed. The observed shift is proportional to the absorbed radiation and can be used to measure the laser near field or its output power. A periodical dependence of the measured signal has been observed as a function of distance between the probe and the surface of the laser due to the interference of the outgoing and cantilever-reflected waves. Due to the multiple reflections resulting in the interference, the light absorption by the probe cantilever is greatly enhanced compared with a single pass case. Interaction of infrared emission of a diode laser with different probes has been studied.

Published
2015

27. InAs/AlSb quantum cascade lasers operating near 20 µm

Author

Alexei N. Baranov, G. Lollia, Roland Teissier, Michael Bahriz, P. Laffaille, ONERA - The French Aerospace Lab [Châtillon], ONERA-Université Paris Saclay (COmUE), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Waveguide (electromagnetism), Threshold current, Materials science, business.industry, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, Cascade, law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Pulsed mode, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Current density, Quantum, ComputingMilieux_MISCELLANEOUS
Abstract

InAs-based quantum cascade lasers (QCLs) operating near 20 µm are demonstrated. A double metal waveguide fabricated by transfer of the laser active region onto a host InAs substrate has been employed in these devices. The threshold current density of 1.6 kA/cm2 at 80 K is lower than that of InP-based QCLs emitting in the same spectral region. The lasers operated in pulsed mode up to 170 K.

Published
2013

28. Submicrometer Process and RF Operation of InAs Quantum Hot-Electron Transistors

Author

Mohammed Zaknoune, Roland Teissier, J. C. Moreno, A. N. Baranov, H. van Nguyen, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[PHYS]Physics [physics], 010302 applied physics, Fabrication, Materials science, business.industry, Superlattice, Transistor, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Temperature measurement, Electronic, Optical and Magnetic Materials, law.invention, law, 0103 physical sciences, Parasitic element, Optoelectronics, Radio frequency, Electrical and Electronic Engineering, 0210 nano-technology, business, Common emitter
Abstract

The fabrication process of a hot-electron unipolar transistor with vertical transport based on InAs material is reported. Devices with an emitter width of 0.3 μm are fabricated and characterized. This submicrometer geometry allowed suppressing parasitic resistances and achieving high-current densities required for high-frequency operation. For the first time, for a hot-electron transistor, RF performances were achieved at room temperature. Cutoff frequencies of ft = 75 GHz and fmax = 88 GHz were obtained on devices transferred on an insulating substrate.

Published
2012

29. High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers

Author

Raffaele Colombelli, François H. Julien, Adel Bousseksou, Roland Teissier, Alexei N. Baranov, G. Lollia, Michael Bahriz, D. Chastanet, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ONERA - The French Aerospace Lab [Châtillon], ONERA-Université Paris Saclay (COmUE), Laboratoire Ecologie Fonctionnelle et Environnement (ECOLAB), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut Ecologie et Environnement (INEE), Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Observatoire Midi-Pyrénées (OMP), Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Infrared, Physics::Optics, 02 engineering and technology, 7. Clean energy, 01 natural sciences, law.invention, 010309 optics, Optics, Fiber Bragg grating, law, 0103 physical sciences, ComputingMilieux_MISCELLANEOUS, business.industry, Single-mode optical fiber, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Laser, [SPI.TRON]Engineering Sciences [physics]/Electronics, Wavelength, Cascade, Optoelectronics, 0210 nano-technology, business, Current density
Abstract

We demonstrate quantum cascade lasers in the InAs/AlSb material system which operate up to 333 K (in pulsed regime) at λ = 17.8 μm. They employ metal-metal optical waveguides and the threshold current density is 1.6 kA/cm2 at 78 K. We also report distributed-feedback devices obtained using the same laser material via a 1st-order Bragg grating inscribed in the sole top metallic contact. Spectral single mode operation with more than 20 dB side mode suppression ratio is achieved at a temperature of 300 K. Large wavelength tuning rates, of the order of 1.5 nm/K, are demonstrated. A wavelength coverage of 0.38 μm is achieved in single-mode regime over a temperature range of 255 K.

Published
2014

30. Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission

Author

Gilles Patriarche, J Ramos, G. Le Roux, Roland Teissier, Guillaume Saint-Girons, Ludovic Largeau, E.V.K Rao, Jean-Christophe Harmand, G Ungaro, Max-Planck-Institut für Astronomie (MPIA), Max-Planck-Gesellschaft, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Ecologie Fonctionnelle et Environnement (ECOLAB), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut Ecologie et Environnement (INEE), Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Observatoire Midi-Pyrénées (OMP), Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Photoluminescence, Annealing (metallurgy), Alloy, Mineralogy, 02 engineering and technology, engineering.material, Epitaxy, 01 natural sciences, Semiconductor laser theory, Inorganic Chemistry, 0103 physical sciences, Materials Chemistry, Thin film, ComputingMilieux_MISCELLANEOUS, Quantum well, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], engineering, Optoelectronics, 0210 nano-technology, business, Molecular beam epitaxy
Abstract

We investigated the molecular-beam epitaxy and the properties of GaAsSbN compound with a low N content in quantum well structures on GaAs. This alloy appears to be an interesting alternative for GaAs-based devices emitting in the 1.3–1.55mm wavelength range. Favorable comparison with the GaInAsN alloy is presented in terms of emission at longer wavelengths. Photoluminescence and annealing studies of GaAsSbN showed characteristics comparable to those already reported for GaInAsN. Carrier recombinations are dominated by extrinsic transitions in as-grown samples. Thermal anneal drastically improves the photoluminescence properties. # 2001 Elsevier Science B.V. All rights reserved.

Published
2001

31. Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices

Author

S. K. Paprotskiy, A. A. Usikova, I. V. Altukhov, Miron S. Kagan, Roland Teissier, N. D. Il’inskaya, Alexei N. Baranov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Condensed Matter::Quantum Gases, 010302 applied physics, Materials science, Condensed matter physics, Superlattice, Physics::Optics, Heterojunction, Purcell effect, Conductivity, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Condensed Matter::Materials Science, Tunnel effect, law, Atomic electron transition, Optical cavity, 0103 physical sciences, 010306 general physics, Quantum well, ComputingMilieux_MISCELLANEOUS
Abstract

Vertical transport in short-period InAs/AlSb superlattices with type-II heterojunctions is studied at room temperature. It is found that negative differential conductivity appears in the miniband-conduction mode upon the overlapping of quantum-confined states in a periodic system of quantum wells. In the nonresonant-tunneling mode, equidistant peaks appear on the current-voltage characteristic of these superlattices. These peaks are attributed to the influence of the optical cavity on optical electron transitions in quantum wells (Purcell effect).

Published
2013

32. Infrared whispering-gallery-mode lasers (λ= 2.4 μm) with convex disk cavity operating at room temperature

Author

Roland Teissier, A. P. Astakhova, N. D. Il’inskaya, E. A. Grebenshchikova, Guilhem Boissier, V. V. Sherstnev, A. M. Monakhov, Yu. P. Yakovlev, Andrey N. Baranov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Range (particle radiation), Materials science, Physics and Astronomy (miscellaneous), Infrared, business.industry, Regular polygon, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, Optics, Semiconductor, law, Etching (microfabrication), 0103 physical sciences, Optoelectronics, Emission spectrum, Whispering-gallery wave, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

A whispering gallery mode (WGM) semiconductor laser with a convex disk cavity operating at room temperature in the middle-IR range (λ = 2.4 μm) has been created for the first time. The convex cavity was formed by etching in a specially selected CrO3-HF-H2O mixture. The room-temperature emission spectra have been measured. The laser generates WGMs at room temperature in a pulsed regime.

Published
2008

33. Highly strained AlAs-type interfaces in InAs/AlSb heterostructures

Author

Maxime Vallet, Alexei N. Baranov, Bénédicte Warot-Fonrose, Christophe Gatel, César Magén, Yann Claveau, Roland Teissier, Anne Ponchet, Nicolas Combe, Julien Nicolaï, Surfaces, Interfaces et Nano-Objets (CEMES-SINanO), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Interférométrie, In situ et Instrumentation pour la Microscopie Electronique (CEMES-I3EM), Universidad de Zaragossa, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-11-BS10-0017,NAIADE,Nanocaractérisation et modélisation d'Antimoniures d'éléments III : Interfaces et Analyse des Déformations d'Epitaxie(2011), European Project: 312483,EC:FP7:INFRA,FP7-INFRASTRUCTURES-2012-1,ESTEEM 2(2012), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Bond length, Condensed Matter::Materials Science, Crystallography, Transmission electron microscopy, 0103 physical sciences, Scanning transmission electron microscopy, Microscopy, 0210 nano-technology, Order of magnitude, Molecular beam epitaxy
Abstract

International audience; Spontaneously formed Al-As type interfaces of the InAs/AlSb system grown by molecular beam epitaxy for quantum cascade lasers were investigated by atomic resolution scanning transmission electron microscopy. Experimental strain profiles were compared to those coming from a model structure. High negative out-of-plane strains with the same order of magnitude as perfect Al-As interfaces were observed. The effects of the geometrical phase analysis used for strain determination were evidenced and discussed in the case of abrupt and huge variations of both atomic composition and bond length as observed in these interfaces. Intensity profiles performed on the same images confirmed that changes of chemical composition are the source of high strain fields at interfaces. The results show that spontaneously assembled interfaces are not perfect but extend over 2 or 3 monolayers.

Published
2016

34. High temperature operation of short wavelength InAs-based quantum cascade lasers

Author

J. C. Moreno, Michael Bahriz, Alexei N. Baranov, Roland Teissier, P. Laffaille, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, General Physics and Astronomy, 02 engineering and technology, engineering.material, 7. Clean energy, 01 natural sciences, law.invention, Optics, Coating, law, 0103 physical sciences, Quantum, Quantum well, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Laser, lcsh:QC1-999, [SPI.TRON]Engineering Sciences [physics]/Electronics, Wavelength, Reflection (mathematics), Cascade, engineering, Optoelectronics, Pulse mode, 0210 nano-technology, business, lcsh:Physics
Abstract

International audience; InAs/AlSb quantum cascade lasers emitting at 3.06 and 3.22μm at room temperature has been studied. The lasers with high reflection coating on back facets operated in pulse mode up to 400 and 423 K, respectively. The obtained results showedno dramatic performance degradation of the InAs-based QCLs with decreasing emission wave length down to 3μm

Published
2012

35. Highly tunable whispering gallery mode semiconductor lasers with controlled absorber

Author

Roland Teissier, Yu. P. Yakovlev, A. M. Monakhov, Guilhem Boissier, Victor V. Sherstnev, M. I. Larchenkov, Andrey N. Baranov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Physics::Optics, 02 engineering and technology, 01 natural sciences, law.invention, Semiconductor laser theory, 020210 optoelectronics & photonics, Optics, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Quantum well, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Heterojunction, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Laser, [SPI.TRON]Engineering Sciences [physics]/Electronics, Wavelength, Quantum dot laser, Optoelectronics, Whispering-gallery wave, business, Tunable laser
Abstract

Tunable semiconductor lasers with controlled absorber based on GaInAsSb/GaAlAsSb quantum well heterostructure was fabricated and experimentally studied. The emission wavelength of these lasers shifts from 2.24 to 2.28 μm when the bias on the control contact decreases from the voltage equal to that on the main electrode to 0 V when the control contact is grounded. The principle of operation of such a device is given.

Published
2012

36. Sub-micron quantum cascade transistor

Author

Alexei N. Baranov, Mohammed Zaknoune, H. Nguyen Van, J. C. Moreno, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Fabrication, Materials science, Terahertz radiation, business.industry, Transistor, Process (computing), 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, Cascade, law, 0103 physical sciences, Optoelectronics, High current, 0210 nano-technology, business, Current density, Quantum
Abstract

A sub-micron process for the fabrication of an original unipolar vertical transport transistor is reported. This allowed suppressing parasitic resistances and achieving high current densities required for THz frequency operation.

Published
2011

37. Optical phonon scattering of cavity polaritons in an electroluminescent device

Author

Aymeric Delteil, J. C. Moreno, Roland Teissier, Alexei N. Baranov, Angela Vasanelli, Carlo Sirtori, Pierre Jouy, D. Barate, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Hôpital Erasme [Bruxelles] (ULB), Faculté de Médecine [Bruxelles] (ULB), Université libre de Bruxelles (ULB)-Université libre de Bruxelles (ULB), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux et Phénomènes Quantiques (MPQ (UMR_7162)), Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Hôpital Erasme, Université Libre de Bruxelles (ULB), and Université Libre de Bruxelles [Bruxelles] (ULB)

Subjects
Physics, Condensed matter physics, Phonon scattering, Condensed Matter - Mesoscale and Nanoscale Physics, Phonon, Scattering, Condensed Matter::Other, FOS: Physical sciences, Physics::Optics, Electroluminescence, Condensed Matter Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, Signal, 010305 fluids & plasmas, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, Condensed Matter::Materials Science, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Polariton, Longitudinal optical, 010306 general physics, ComputingMilieux_MISCELLANEOUS
Abstract

A signature of the scattering between microcavity polaritons and longitudinal optical phonons has been observed in the electroluminescence spectrum of an intersubband device operating in the light-matter strong-coupling regime. By electrical pumping we resonantly populate the upper polariton branch at different energies as a function of the applied bias. The electroluminescent signal arising from these states is seconded by a phonon replica from the lower branch.

Published
2011

38. Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure

Author

Alexei N. Baranov, Stanko Tomić, Roland Teissier, Alfred R. Adams, Igor P. Marko, Stephen J. Sweeney, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Condensed matter physics, Phonon scattering, Carrier scattering, business.industry, Chemistry, Hydrostatic pressure, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Laser, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Semiconductor laser theory, [SPI.TRON]Engineering Sciences [physics]/Electronics, Wavelength, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Quantum cascade laser, Quantum well, ComputingMilieux_MISCELLANEOUS
Abstract

To investigate carrier scattering processes in short wavelength InAs/AlSb quantum cascade lasers we carried out experimental and theoretical studies of the threshold current, I th , as a function of high hydrostatic pressure and temperature. Using the calculated pressure dependence of the optical phonon scattering current, I ph , and the estimated pressure dependence of leakage current, I leak , we show that carrier leakage from the upper laser levels into the indirect L-valley of the conduction band in InAs quantum wells is negligible in the 3.3 μm QCLs at RT leading to their superior temperature performance. In the shorter wavelength devices emitting at 2.9 μm, this loss mechanism is more important and accounts for up to 13% of I th at 190 K.

Published
2009

39. Experimental observation of whispering gallery modes in sector disk lasers

Author

Andrey N. Baranov, Roland Teissier, A. P. Astakhova, Guilhem Boissier, Victor V. Sherstnev, Yu. P. Yakovlev, A. M. Monakhov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics and Astronomy (miscellaneous), Physics::Optics, 02 engineering and technology, Laser pumping, 01 natural sciences, Semiconductor laser theory, law.invention, Resonator, Optics, law, 0103 physical sciences, Emission spectrum, Astrophysics::Galaxy Astrophysics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Physics, business.industry, 021001 nanoscience & nanotechnology, Laser, [SPI.TRON]Engineering Sciences [physics]/Electronics, Continuous wave, Optoelectronics, Astrophysics::Earth and Planetary Astrophysics, Whispering-gallery wave, 0210 nano-technology, business, Tunable laser
Abstract

The existence of the whispering gallery modes in a sector disk resonator has been demonstrated theoretically and experimentally observed in a disk, half-disk, and quarter-disk semiconductor lasers. The half-disk and quarter-disk lasers are fabricated from 285μm diameter disks emitted near 2.13μm at room temperature with continuous wave threshold currents of 55–60mA. Mode spacing in emission spectra of the half-disk lasers was the same as for the whole disk and doubled for the quarter disk as expected from the theoretical analysis. Half-disk lasers emit two parallel beams from the cleaved facet, while the two output beams are perpendicular in quarter-disk devices.

Published
2009

40. InAs-based distributed feedback quantum cascade lasers

Author

Alexei N. Baranov, J. Devenson, Roland Teissier, O. Cathabard, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, 7. Clean energy, law.invention, Semiconductor laser theory, [SPI.TRON]Engineering Sciences [physics]/Electronics, Wavelength, Optics, law, Cascade, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Quantum cascade laser, Quantum, Tunable laser, Quantum well, ComputingMilieux_MISCELLANEOUS
Abstract

InAs/AlSb distributed feedback quantum cascade lasers are presented. The lasers can operate in the single frequency regime at 3.34-3.38 mum in the 0-100degC temperature range in pulse mode. The wavelength tuning rate of the lasers is 0.27 nm/K and continuous tuning range up to 10 nm can be achieved.

Published
2009

41. The effect of hydrostatic pressure on the operation of quantum cascade lasers

Author

Alexei N. Baranov, Igor P. Marko, Stephen J. Sweeney, Alfred R. Adams, Stanko Tomić, Roland Teissier, Advanced Technology Institute, University of Surrey (UNIS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Condensed matter physics, business.industry, Chemistry, Carrier scattering, Scattering, Hydrostatic pressure, 01 natural sciences, law.invention, Semiconductor laser theory, [SPI.TRON]Engineering Sciences [physics]/Electronics, 010309 optics, chemistry.chemical_compound, Operating temperature, Cascade, law, 0103 physical sciences, Optoelectronics, Indium arsenide, business, Quantum cascade laser, ComputingMilieux_MISCELLANEOUS
Abstract

Quantum Cascade Lasers (QCLs) have been very successful at long wavelengths, >4μm, and there is now considerable effort to develop QCLs for short wavelength (2-3μm) applications. To optimise both interband and QC lasers it is important to understand the role of radiative and non-radiative processes and their variation with wavelength and temperature. We use high hydrostatic pressure to manipulate the band structure of lasers to identify the dominant efficiency limiting processes. We describe how hydrostatic pressure may also be used to vary the separation between the Γ, Χ and L bands, allowing one to investigate the role of inter-valley carrier scattering on the properties of QCLs. We will describe an example of how pressure can be used to investigate the properties of 2.9-3.3μm InAs/AlSb QCLs. We find that while the threshold current of the 3.3μm devices shows little pressure variation even at room temperature, for the 2.9μm devices the threshold current increases by ~20% over 4kbar at 190K consistent with carrier scattering into the L-minima. Based on our high pressure studies, we conclude that the maximum operating temperature of InAs/AlSb QCLs decreases with decreasing wavelength due to increased carrier scattering into the L-minima of InAs.

Published
2009

42. Conception and Fabrication of InAs-based Hot Electron Transistor

Author

Luca Varani, Alexei N. Baranov, G. Boissier, Roland Teissier, T. Daoud, G. Sabatini, J. Devenson, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Eric, Dauverchain

Subjects
Fabrication, Materials science, Heterojunction bipolar transistor, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, chemistry.chemical_compound, law, Etching, 0103 physical sciences, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Doping, Transistor, Heterojunction, 021001 nanoscience & nanotechnology, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, Indium phosphide, Optoelectronics, 0210 nano-technology, business, Indium gallium arsenide
Abstract

An innovative hot electron transistor based on InAs/AlSb heterostructures is proposed and studied. First fabricated devices demonstrated static current gain of 5 at room temperature. The potential of this device for high frequency operation is also discussed.

Published
2008

43. Relaxation and dephasing of the intersubband transitions in n-type InAs/AlSb multi quantum wells

Author

Dmitry G. Revin, S. Menzel, E. A. Zibik, Alexei N. Baranov, Roland Teissier, J. Devenson, John W. Cockburn, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Physics and Astronomy (miscellaneous), Condensed matter physics, business.industry, Chemistry, Dephasing, Relaxation (NMR), Heterojunction, Electron, Laser, 01 natural sciences, 7. Clean energy, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Brillouin zone, law, 0103 physical sciences, Optoelectronics, 010306 general physics, business, Quantum well, Light-emitting diode
Abstract

DOI: 10.1063/1.2769948The InAs/AlSb heterostructure has attracted consider-able interest since it provides unique physical properties. Thelow effective electron mass in InAs provides excellent mo-bility, long electron relaxation time, and a high intersubbandoptical matrix element, while the high conduction band off-set 2.1 eV at the -point of the Brillouin zone provides avery good electron confinement. These favorable propertieshave led to the adoption of this material system for the real-ization of high-performance quantum cascade lasers QCLsat the short wavelength limit of the midinfrared spectrum.Laser emission from InAs/AlSb QCLs has been demon-strated at wavelengths as short as 2.95 m, while spontane-ous intersubband emission from QC light emitting diodes hasbeen observed down to 2.5 m.

Published
2007

44. High temperature operation of λ≈3.3 µm quantum cascade lasers

Author

Alexei N. Baranov, J. Devenson, Roland Teissier, O. Cathabard, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Physics and Astronomy (miscellaneous), business.industry, Chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 7. Clean energy, 01 natural sciences, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Wavelength, Cascade, law, Quantum dot laser, 0103 physical sciences, Thermal, Optoelectronics, 0210 nano-technology, business, Quantum, Tunable laser, Quantum well, ComputingMilieux_MISCELLANEOUS
Abstract

We report quantum cascade lasers emitting at a wavelength near 3.3μm up to a temperature of 400K in pulsed mode. A fine tuning of the InAs∕AlSb active region design allowed to maintain efficient electron injection and to reduce thermal backfilling at high temperatures. The threshold current density is 3kA∕cm2 at 300K with characteristic temperature T0 of 175K. The lasers emitted up to 1W peak power in a single lateral mode at room temperature.

Published
2007

45. InAs/AlSb quantum cascade lasers emitting below 3 μm

Author

Roland Teissier, Alexei N. Baranov, J. Devenson, O. Cathabard, Institut d’Electronique et des Systèmes (IES), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, III-V semiconductors, Physics and Astronomy (miscellaneous), stimulated emission, Physics::Optics, 02 engineering and technology, Laser pumping, 01 natural sciences, 7. Clean energy, Semiconductor laser theory, law.invention, Condensed Matter::Materials Science, Optics, law, 0103 physical sciences, Physics::Atomic Physics, laser modes, Quantum well, 010302 applied physics, Blue laser, quantum cascade lasers, business.industry, Far-infrared laser, aluminium compounds, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Laser, [SPI.TRON]Engineering Sciences [physics]/Electronics, indium compounds, Quantum dot laser, Optoelectronics, 0210 nano-technology, business, Tunable laser
Abstract

International audience; Quantum cascade lasers emitting below 3 μm are demonstrated. The lasers based on the InAs/AlSb material system emit at 2.95-2.97 μm in pulsed mode with threshold current densities near 3 kA/cm2 at 84 K and operate up to room temperature. No degradation has been observed in laser performances compared with InAs/AlSb quantum cascade lasers emitting at 3.14-3.35 μm. The obtained results show no influence of the L valley in InAs on operation of these short wavelength quantum cascade lasers

Published
2007

46. Giant intersubband polariton splitting in InAs/AlSb microcavities

Author

D. Barate, Alessandro Tredicucci, J. Devenson, Alexei N. Baranov, Roland Teissier, Aji A. Anappara, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Anappara, Aa, Barate, D, Tredicucci, Alessandro, Devenson, J, Teissier, R, and Baranov, A.

Subjects
Photon, Intersubband transitions, intersubband, Polaritons, Intersubband polariton, 02 engineering and technology, 01 natural sciences, law.invention, law, InAs, 0103 physical sciences, Materials Chemistry, Polariton, InA, PHOTONIC CRYSTAL, 010306 general physics, Quantum well, Polariton, intersubband, InAs, microcavities, Total internal reflection, Condensed matter physics, Optical properties, business.industry, Liquid helium, Chemistry, Condensed Matter::Other, NANOCAVITY, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, microcavities, [SPI.TRON]Engineering Sciences [physics]/Electronics, Semiconductor, Semiconductors, 0210 nano-technology, business, Excitation
Abstract

The optical response of the intersubband excitation of multiple InAs/AlSb quantum wells embedded in a planar semiconductor microcavity has been studied through angle-dependent reflectance measurements. Using a resonator based on total internal reflection, a strong coupling is demonstrated between the intersubband optical transition and the cavity photon, with the attendant formation of intersubband polaritons. A giant vacuum-Rabi splitting 2 Ω R was observed both at liquid helium temperatures ( 2 Ω R = 33 meV ) as well as at 300 K ( 2 Ω R = 32 meV ), for a transition energy ω 12 = 123 meV . The observed ratio Ω r ω 12 is a record high value (14%) for any strongly-coupled systems, and demonstrates the huge potential of this material for the achievement of the ultra-strong coupling regime predicted theoretically.

Published
2007

47. Radiative quantum efficiency in anInAs∕AlSbintersubband transition

Author

Aaron Wade, A. Leuliet, Alexei N. Baranov, Roland Teissier, Angela Vasanelli, Georgy Fedorov, Clément Faugeras, D. Barate, J. Devenson, Dmitry Smirnov, and Carlo Sirtori

Subjects
Physics, Condensed matter physics, Scattering, 02 engineering and technology, Electron, Inelastic scattering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 7. Clean energy, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Magnetic field, Effective mass (solid-state physics), law, 0103 physical sciences, Radiative transfer, Quantum efficiency, 010306 general physics, 0210 nano-technology, Quantum cascade laser
Abstract

The quantum efficiency of an electroluminescent intersubband emitter based on $\mathrm{In}\mathrm{As}∕\mathrm{Al}\mathrm{Sb}$ has been measured as a function of the magnetic field up to $20\phantom{\rule{0.3em}{0ex}}\mathrm{T}$. Two series of oscillations periodic in $1∕B$ are observed, corresponding to the elastic and inelastic scattering of electrons of the upper state of the radiative transitions. Experimental results are accurately reproduced by a calculation of the excited-state lifetime as a function of the applied magnetic field. The interpretation of these data gives an exact measure of the relative weight of the scattering mechanisms and allows the extraction of material parameters such as the energy-dependent electron effective mass and the optical phonon energy.

Published
2006

48. Room temperature operation of InAs/AlSb quantum cascade lasers

Author

Dmitry G. Revin, C. Alibert, Carlo Sirtori, Michel Garcia, Xavier Marcadet, Alexei N. Baranov, Charles Renard, D. Barate, John W. Cockburn, Aurore Vicet, Roland Teissier, Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), and Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)

Subjects
current density, Materials science, III-V semiconductors, Physics and Astronomy (miscellaneous), Physics::Optics, molecular beam epitaxial growth, 02 engineering and technology, 01 natural sciences, law.invention, Semiconductor laser theory, Condensed Matter::Materials Science, law, 0103 physical sciences, Plasmon, Quantum well, 010302 applied physics, quantum cascade lasers, business.industry, surface plasmons, aluminium compounds, waveguide lasers, 021001 nanoscience & nanotechnology, Laser, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, semiconductor growth, [SPI.TRON]Engineering Sciences [physics]/Electronics, indium compounds, Cascade, Quantum dot laser, Optoelectronics, 0210 nano-technology, business, Tunable laser, Molecular beam epitaxy
Abstract

International audience; The room temperature operation of InAs/AlSb quantum cascade lasers is reported. The structure, grown by molecular beam epitaxy on an InAs substrate, is based on a vertical transition design and a low loss n+-InAs plasmon enhanced waveguide. The lasers emitting near 4.5 μm operate in pulse regime up to 300 K. The threshold current density of 3.18-mm-long lasers is 1.5 kA/cm2 at 83 K and 9 kA/cm2 at 300 K.

Published
2004

49. Failure analysis of a quantum cascade laser structure by electrostatic force microscopy

Author

André Joullié, Roland Teissier, M. Azize, Alexei N. Baranov, Pascal Girard, Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), and Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Kelvin probe force microscope, Materials science, business.industry, Electrostatic force microscope, General Engineering, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Condensed Matter::Materials Science, law, Cascade, 0103 physical sciences, Breakdown voltage, Optoelectronics, 0210 nano-technology, Quantum cascade laser, business, Non-contact atomic force microscopy, Photoconductive atomic force microscopy
Abstract

International audience; Noncontact mode electrostatic force microscopy was employed to investigate cleaved sections of a GaSb-based quantum cascade laser structure. The technique enabled us to determine the surface potential distribution, at equilibrium and under applied external field, and to locate precisely the zone which is at the origin of failure in laser characteristics when a breakdown voltage is applied to the device

Published
2003

50. Experimental study of hot-electron inelastic scattering rate inp-type InGaAs

Author

D. Sicault, Jean-Luc Pelouard, Roland Teissier, F. Mollot, Fabrice Pardo, Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Physics, Attenuation, Relaxation (NMR), 02 engineering and technology, Electron, Inelastic scattering, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI.TRON]Engineering Sciences [physics]/Electronics, Ballistic conduction, Scattering rate, 0103 physical sciences, Atomic physics, 010306 general physics, 0210 nano-technology, Spectroscopy, Energy (signal processing)
Abstract

The inelastic scattering rates of electrically injected minority hot electrons measured using a continuous-wave spatially resolved electroluminescence spectroscopy are reported. To our knowledge, this constitutes direct experimental determination of this parameter related to the individual inelastic interactions. The evolution of the electron relaxation rate with increasing majority hole density is explored. Remarkably, an attenuation of the scattering rate is measured for p-doping levels higher than $2\ifmmode\times\else\texttimes\fi{}{10}^{19} {\mathrm{cm}}^{\ensuremath{-}3}.$ Additionally, the measured hot-electron energy distributions further indicate that the relaxation mechanisms are dominated by LO phonon-plasmons coupled modes in the range ${10}^{18}$ to ${10}^{19} {\mathrm{cm}}^{\ensuremath{-}3}$ hole density. Finally, the temperature dependence of inelastic scattering rate is also measured to learn on the potential implication of ballistic transport in RT operating hot-electron devices.

Published
2002

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