1. Effects of Ambient/Carrier Gas on Amorphous InGaZnO-Based Thin-Film Transistors Using Ultrasonic Spray Pyrolysis Deposition
- Author
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Wei-Chou Hsu, Ching-Sung Lee, Teng-Yuan Chang, Han-Yin Liu, Shun-Cheng Shih, Wei-Ting Chen, Pei-Huang Hsu, and Che-Lun Chang
- Subjects
010302 applied physics ,Materials science ,business.industry ,Oxide ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Indium tin oxide ,Amorphous solid ,chemistry.chemical_compound ,Crystallinity ,chemistry ,Sputtering ,Thin-film transistor ,0103 physical sciences ,Deposition (phase transition) ,Optoelectronics ,Electrical and Electronic Engineering ,Thin film ,business - Abstract
This study investigates how ambient/carrier gases affect the material characteristics of amorphous indium–gallium–zinc oxide (a-InGaZnO) thin films deposited using the ultrasonic spray pyrolysis deposition (USPD) method. Nitrogen and air are used as the ambient/carrier gases in this study. The crystallinity, oxygen deficiency, energy bandgap, and trap level in the a-InGaZnO thin films are analyzed. The performance of the thin-film transistors (TFTs) based on a-InGaZnO with different ambient/carrier gases is investigated as well. It is found that oxygen deficiency is suppressed when air is used as the ambient/carrier gas. When nitrogen is used as the ambient/carrier gas to deposit a-InGaZnO thin film, the TFT shows higher field-effect mobility and saturation mobility. However, when the a-InGaZnO thin film is deposited with air as the ambient/carrier gas, the subthreshold swing, ON-/ OFF-current ratio, interface trap density, and stability of the TFT are improved. This study demonstrates how ambient/carrier gases in the USPD system affect the performance of a-InGaZnO TFT.
- Published
- 2021