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We propose an alignment-free and polarization-selective bidirectional absorber composed of a one-dimensional bilayer Au grating array buried in a silicon nitride spacer. The absorptivity of the designed structure is more than 95% (77%) under normal forward (backward) TM-polarized light incidence, and is more than 80% (70%) within a forward (backward) incident angle up to 30&deg, The great bidirectional absorption performance is illustrated by the resonance coupling of the surface plasmon polaritons (SPPs) resonance, the propagating surface plasmon (PSP) resonance and the localized surface plasmon (LSP) resonance under TM-polarized wave illumination. Moreover, the excitation of the Fano-like resonance mode of the proposed metasurface can produce two significantly different peaks in the absorption spectrum under the oblique TM-polarized incidence, which is beneficial for the plasmon-sensing application. Therefore, the proposed bidirectional metasurface absorber can be a candidate in the application of optical camouflage, thermal radiation, solar cells and optical sensing.

Three-dimensional numerical simulation technology was used to investigate the influence of structural and material parameters on the modulation transfer function (MTF) of lattice matched InGaAs/InP planar small pitch arrays. We found that extending depletion zone through increasing depth of diffusion junction and reducing the doping concentration in the absorption layer plays a critical role in optimizing the MTF of arrays. And it is highly worth noting that the very optimization effects become even more pronounced in smaller pitch arrays, which offers valuable references to restrain crosstalk in highly dense array and strengthen the imaging ability of large format photodetector system in future. However, the inevitable cost of deteriorating the specific detectivity should not be ignored. And hence, junction depth and doping concentration of the absorption layer need to be balanced in actual preparation. In addition, the effects of lattice temperature on MTF and crosstalk in arrays were also discussed. The inter-pixel crosstalk deteriorates seriously as rising lattice temperature. A stronger impact of lattice temperature on MTF of larger pitch arrays has been confirmed. This work offers important reference to suppress inter-pixel crosstalk in obtaining the high-resolution imaging for InGaAs photodetector focal plane array.

The electronic band structure of conventional InAs/GaSb superlattices (SLs), N- and M-structure were investigated by 8-band k·p method. A good agreement between the theoretical calculation and experimental results was obtained. Compared with the conventional structure, the band gap and effective mass of N- and M-structure both increased with the thickness of AlSb layers raising. The splitting energy between first heavy hole band (HH1) and first light hole band (LH1) increased in N-structure, but firstly raised and then reduced in M-structure. The impact of changing the position of AlSb barrier in M-structure is also studied. By altering the position of the barrier layer, the wave function overlaps can be controlled at the InAs/GaSb or GaSb/InAs interface in PN junction. By comparing the three type SLs, we found that N- and M-structure can obviously suppress dark current and enhance wave function overlap. Besides, M-structure can be more alternative in structure design.

We fabricated an acousto-optic semiconductor hybrid device for strong optomechanical coupling of individual quantum emitters and a surface acoustic wave. Our device comprises a surface acoustic wave chip made from highly piezoelectric LiNbO$_3$ and a GaAs-based semiconductor membrane with an embedded layer of quantum dots. Employing multi-harmonic transducers, we generated sound waves on LiNbO$_3$ over a wide range of radio frequencies. We monitored their coupling to and propagation across the semiconductor membrane both in the electrical and optical domain. We demonstrate enhanced optomechanical tuning of the embedded quantum dots with increasing frequencies. This effect was verified by finite element modelling of our device geometry and attributed to an increased localization of the acoustic field within the semiconductor membrane. For moderately high acoustic frequencies, our simulations predict strong optomechanical coupling making our hybrid device ideally suited for applications in semiconductor based quantum acoustics., Comment: revised manuscript. unit conversion error fixed