1. Plasma‐Enhanced Atomic Layer Deposition of Al$_{2}$O$_{3}$ on Graphene Using Monolayer hBN as Interfacial Layer
- Author
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Max C. Lemme, Harm C. M. Knoops, R. S. Sundaram, Aileen O'Mahony, Vitaliy Babenko, Stephan Hofmann, Barbara Canto, Daniel Neumaier, Martin Otto, and Michael J. Powell
- Subjects
Condensed Matter - Materials Science ,Materials science ,Graphene ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,Hexagonal boron nitride ,02 engineering and technology ,Plasma ,010402 general chemistry ,021001 nanoscience & nanotechnology ,7. Clean energy ,01 natural sciences ,Industrial and Manufacturing Engineering ,0104 chemical sciences ,law.invention ,Atomic layer deposition ,Chemical engineering ,Mechanics of Materials ,law ,Monolayer ,General Materials Science ,0210 nano-technology ,Layer (electronics) ,ddc:600 - Abstract
The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphene lattice caused by the plasma deposition. The results show that a monolayer of hBN in combination with an optimized deposition process can effectively protect graphene from damage, while significant damage was observed without an hBN layer. Electrical characterization of double gated graphene field effect devices confirms that the graphene did not degrade during the plasma deposition of Al$_2$O$_3$. The leakage current densities were consistently below 1 nA/mm for electric fields across the insulators of up to 8 MV/cm, with irreversible breakdown happening above. Such breakdown electric fields are typical for Al$_2$O$_3$ and can be seen as an indicator for high quality dielectric films.
- Published
- 2021