1. A novel hot embossing Graphene transfer process for flexible electronics
- Author
-
Francesca Frascella, Matteo Parmeggiani, Simone Luigi Marasso, Candido Pirri, Matteo Cocuzza, Alberto Ballesio, and Alessio Verna
- Subjects
Materials science ,Fabrication ,02 engineering and technology ,Substrate (electronics) ,Cyclic olefin copolymer ,01 natural sciences ,law.invention ,symbols.namesake ,chemistry.chemical_compound ,law ,Graphene transfer ,0103 physical sciences ,Deposition (phase transition) ,Electrical and Electronic Engineering ,FOIL method ,Flexible electronics ,010302 applied physics ,business.industry ,Graphene ,CVD ,Hot embossing ,G-FET ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,chemistry ,symbols ,Optoelectronics ,0210 nano-technology ,business ,Raman spectroscopy - Abstract
In this work a new Single Layer Graphene (SLG) transfer technique exploiting a hot embossing process was carried out. Flexible electrolyte gated Graphene Field Effect Transistors (G-FET) were fabricated and tested electrically. A polymeric transparent foil suitable for optics and flexible electronics, Cyclic Olefin Copolymer (COC) was used as flexible substrate. Raman characterization confirmed that the new Hot Embossing Graphene Transfer (HEGT) is suitable for the deposition of SLG and the fabrication of G-FETs. A Comparison with SLG common transfer method was carried out and proven for G-FETs fabrication. The HEGT devices showed typical characteristics and maintained the same performances when the substrate was bent. This demonstrated that the HEGT allows for efficient transfer of high quality SLG on large area thus providing the opportunity for the exploitation on a large scale production process for flexible substrates.
- Published
- 2019
- Full Text
- View/download PDF