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Start Over Author "Odnoblyudov, Vladimir" Topic a3. molecular beam epitaxy
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1. InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy

Author

Ustinov, Victor M., Egorov, Anton Yu., Odnoblyudov, Vladimir A., Kryzhanovskaya, Natalya V., Musikhin, Yurii G., Tsatsul’nikov, Andrey F., and Alferov, Zhores I.

Subjects
*QUANTUM dots, *MOLECULAR beam epitaxy, *SEMICONDUCTORS
Abstract

InAs/InGaAsN quantum dots have been grown by molecular beam epitaxy on GaAs substrates. Transmission electron microscopy shows the increase in the island size as compared to the InAs/InGaAs quantum dots. Room temperature photoluminescence at 1.55 μm has been demonstrated whose intensity was comparable to that of the InGaAsN/GaAs quantum wells emitting at 1.3 μm. The effect of nitrogen concentration on the PL peak position and intensity has been studied. [Copyright &y& Elsevier]

Published
2003
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