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Bipolar switching properties and electrical conduction mechanism in Sn:SiO thin-film RRAM devices were investigated and discussed. To complete the resistive switching properties of the stannum doped into silicon oxide thin films, the RTA-treated Sn:SiO thin-film RRAM devices were investigated and discussed. In addition, the improvement qualities and electrical switching properties of the RTA-treated Sn:SiO thin-film RRAM devices were carried out XPS, FT-IR, and IV measurement. The ohmic conduction with metal-like behavior and hopping conduction dependent activation energy properties by the Arrhenius plot equation in LRS of the Sn:SiO thin films was investigated. The activation energy and hopping distance for the RTA-treated thin films were found to be 0.018 eV and 1.1 nm, respectively. For the compatibility with the IC processes, the RTA treatment was a promising method for the Sn:SiO thin-film RRAM nonvolatile memory applications. [ABSTRACT FROM AUTHOR]

In this study, the hopping conduction distance variation of Zn:SiO2 resistance random access memory (RRAM) devices with different operating compliance currents was discussed and verified. To investigate and determine the hopping conduction distance dependent activation energy characteristics, the Arrhenius plot of low resistance state of Zn:SiO2 RRAM devices was applied, from which we proposed carrier conduction model. With the increase of current compliance, more metal ions would accumulate to form precipitates with larger diameter, which in turn resulted in the shortening of hopping distance. Because of shorter hopping distance, activation energy for carrier hopping would decrease. [ABSTRACT FROM AUTHOR]