17 results on '"Jan-Laurens van der Steen"'
Search Results
2. P-127: Dual-Gate Self-Aligned IGZO TFTs Monolithically Integrated with High-Temperature Bottom Moisture Barrier for Flexible AMOLED
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Gerwin H. Gelinck, Gerard de Haas, Wim Dehaene, Ming Hua Yeh, Jan Genoe, Hylke B. Akkerman, Joris Maas, Auke Jisk Kronemeijer, Jan-Laurens van der Steen, Shin Chuan Chiang, Pradeep Panditha, Roy Verbeek, Madelon Rovers, Raghu Pendyala, Lynn Verschueren, Thijs Bel, Karin van Diesen, Soeren Steudel, Yen Yu Huang, Manoj Nag, Joris de Riet, and Ya Ju Lu
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010302 applied physics ,Materials science ,Moisture ,business.industry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Dual gate ,01 natural sciences ,AMOLED ,Oxide semiconductor ,Flexible display ,Thin-film transistor ,Moisture barrier ,0103 physical sciences ,Optoelectronics ,Thin film ,0210 nano-technology ,business - Published
- 2018
3. High resolution photolithography for direct view active matrix organic light-emitting diode augmented reality displays
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Yen Yu Huang, Gerwin H. Gelinck, Ya Han Liu, Paul Heremans, Pawel E. Malinowski, Atsushi Nakamura, Soeren Steudel, Dieter Vander Velpen, Auke Jisk Kronemeijer, Erwin Vandenplas, Ming Hua Yeh, Jan-Laurens van der Steen, Nikolas P. Papadopoulos, Tung Huei Ke, Yu Hsien Chen, and Che Cheng Kuo
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010302 applied physics ,Materials science ,business.industry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Dot pitch ,Electronic, Optical and Magnetic Materials ,Active matrix ,law.invention ,AMOLED ,law ,0103 physical sciences ,OLED ,Optoelectronics ,Augmented reality ,Electrical and Electronic Engineering ,Photolithography ,0210 nano-technology ,business ,Pixel density ,Diode - Abstract
High-resolution RGB organic light-emitting diode frontplane is a key enabler for direct-view transparent augmented reality displays. In this paper, we demonstrate 1250 ppi passive displays and semi-transparent active displays. Organic light-emitting diode photolithography can provide pixel density above 1000 ppi while keeping effective emission area high because of high aperture ratio. Patterns with 2 μm line pitch were successfully transferred to emission layers, indicating possible further pixel density scaling. Lifetime after patterning, key parameter enabling industrialization, is above 150 h (T90 at 1000 nit).
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- 2018
4. Power saving through state retention in IGZO-TFT AMOLED displays for wearable applications
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Madelon Rovers, Joris Maas, Yen-Yu Huang, Karin van Diesen, Steve Smout, Paul Heremans, Marc Ameys, Jan Genoe, Jan-Laurens van der Steen, Manoj Nag, Tung Huei Ke, Joris de Riet, Roy Verbeek, Soeren Steudel, Florian De Roose, Shin-Chuan Chiang, Gerwin H. Gelinck, Gerard de Haas, Wim Dehaene, Thijs Bel, and Auke Jisk Kronemeijer
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010302 applied physics ,Materials science ,business.industry ,Transistor ,Electrical engineering ,02 engineering and technology ,engineering.material ,021001 nanoscience & nanotechnology ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,Polycrystalline silicon ,AMOLED ,Backplane ,law ,Thin-film transistor ,Flexible display ,0103 physical sciences ,engineering ,Electrical and Electronic Engineering ,Photolithography ,0210 nano-technology ,business ,Diode - Abstract
We present a qHD (960 × 540 with three sub-pixels) top-emitting active-matrix organic light-emitting diode display with a 340-ppi resolution using a self-aligned IGZO thin-film transistor backplane on polyimide foil with a humidity barrier. The back plane process flow is based on a seven-layer photolithography process with a CD = 4 μm. We implement a 2T1C pixel engine and use a commercial source driver IC made for low-temperature polycrystalline silicon. By using an IGZO thin-film transistor and leveraging the extremely low off current, we can switch off the power to the source and gate driver while maintaining the image unchanged for several minutes. We demonstrate that, depending on the image content, low-refresh operation yields reduction in power consumption of up to 50% compared with normal (continuous) operation. We show that with the further increase in resolution, the power saving through state retention will be even more significant.
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- 2017
5. 29.4: Flexible AMOLED Display with Integrated Gate Driver Operating at Operation Speed Compatible with 4k2k
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Gerwin H. Gelinck, Paul Heremans, Abhishek Kumar, Peter Vicca, Mitsuhiro Murata, Ajay Bhoolokam, Jan Genoe, Sarah Schols, Marc Ameys, Brian Cobb, Steve Smout, Myriam Willegems, Kris Myny, Koji Obata, Jan-Laurens van der Steen, Soeren Steudel, Manoj Nag, and Ke Tung Huei
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Engineering ,business.industry ,Process (computing) ,Electrical engineering ,law.invention ,AMOLED ,Backplane ,law ,Thin-film transistor ,Flexible display ,OLED ,Gate driver ,Photolithography ,business - Abstract
We present a QVGA (320x240 with 3 sub-pixel) top-emitting AMOLED display with 250ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil with full barrier. The back plane process flow is based on a 7 layer photolithography process. The aperture ratio of the top-emitting OLEDs is approx. 80%. An integrated gate driver is shown that can be driven at operation speed equivalent to a 4k2k display at 100Hz
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- 2015
6. Integrated Line Driver for Digital Pulse-Width Modulation Driven AMOLED Displays on Flex
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Sarah Schols, Gerwin H. Gelinck, Manoj Nag, Tung Huei Ke, Joris Maas, Paul Heremans, Ashutosh Tripathi, Jan Genoe, Tim Ellis, Jan-Laurens van der Steen, Marc Ameys, Kris Myny, Soeren Steudel, and Koji Obata
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AMOLED ,Backplane ,Duty cycle ,business.industry ,Computer science ,Electrical engineering ,Electronic engineering ,OLED ,Line driver ,Electrical and Electronic Engineering ,business ,Dynamic logic (digital electronics) ,Pulse-width modulation - Abstract
An integrated scan-line driver, driving half a QQVGA flexible AMOLED display using amorphous-IGZO backplane technology on foil, has been designed and measured. A pulse-width modulation technique has been implemented, enabling to drive the OLEDs with a duty cycle up to almost 100%. The digital driving method also results in a 40% static power reduction of the display. Dynamic logic and bootstrapping techniques enabled the use of clock frequencies up to 300 kHz in unipolar amorphous-IGZO technologies on foil.
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- 2015
7. Circuits and AMOLED display with self-aligned a-IGZO TFTs on polyimide foil
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Paul Heremans, Robert Muller, Myriam Willegems, Steve Smout, Manoj Nag, Brian Cobb, Ajay Bhoolokam, Sarah Schols, Jan Genoe, Guido Groeseneken, Jan-Laurens van der Steen, Abhishek Kumar, Kris Myny, Marc Ameys, Gerwin H. Gelinck, Soeren Steudel, Yusuke Fukui, Tung Huei Ke, Peter Vicca, Koji Obata, and Tim Ellis
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Materials science ,business.industry ,Transistor ,Nanotechnology ,Ring oscillator ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Threshold voltage ,law.invention ,AMOLED ,law ,Thin-film transistor ,Parasitic element ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Sheet resistance ,Diode - Abstract
A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide foil is presented. The source/drain (S/D) region's parasitic resistance reduced during the SiN interlayer deposition step. The sheet resistivity of S/D region after exposure to SiN interlayer deposition decreased to 1.5 kΩ/□. TFTs show field-effect mobility of 12.0 cm2/(V.s), sub-threshold slope of 0.5 V/decade, and current ratio (I ON/OFF) of >107. The threshold voltage shifts of the TFTs were 0.5 V in positive (+1.0 MV/cm) bias direction and 1.5 V in negative (-1.0 MV/cm) bias direction after extended stressing time of 104 s. We achieve a stage-delay of ~19.6 ns at V-DD = 20 V measured in a 41-stage ring oscillator. A top-emitting quarter-quarter-video-graphics-array active-matrix organic light-emitting diode display with 85 ppi (pixels per inch) resolution has been realized using only five lithographic mask steps. For operation at 6 V supply voltage (V-DD), the brightness of the display exceeds 150 cd/m2. A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) is presented. TFTs show field-effect mobility of 12.0 cm2/(V.s), sub-threshold slope of 0.5 V/decade, and current ratio (I ON/OFF) of over 107. In applications, a 41-stage ring oscillator with a stage-delay of ~19.6 ns (at V-DD = 20 V) and a top-emitting quarter-quarter-video-graphics-array (QQVGA) active-matrix organic light-emitting diode (AMOLED) display with 85 ppi (pixels per inch) resolution using five lithographic mask steps have been realized on a polyimide foil. Copyright 2015 Society for Information Display.
- Published
- 2014
8. 5-3: Distinguished Paper: Power Saving through State Retention in IGZO-TFT AMOLED Displays for Wearable Applications
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Gerwin H. Gelinck, Gerard de Haas, Jan-Laurens van der Steen, Auke Jisk Kronemeijer, Joris Maas, Joris de Riet, Shin-Chuan Chiang, Yen-Yu Huang, Roy Verbeek, Steve Smout, Karin van Diesen, Thijs Bel, Tung Huei Ke, Paul Heremans, Wim Dehaene, Jan Genoe, Soeren Steudel, Florian De Roose, Marc Ameys, Manoj Nag, and Madelon Rovers
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Metal-oxide semiconductors ,Engineering ,TS - Technical Sciences ,Industrial Innovation ,business.industry ,State retention ,Electrical engineering ,HOL - Holst ,law.invention ,Power (physics) ,Flexible displays ,AMOLED ,Backplane ,Thin-film transistor ,law ,Flexible display ,Nano Technology ,Self-aligned TFT ,Electronics ,Photolithography ,business ,AND gate - Abstract
We present a qHD (960x540 with 3 sub-pixels) top-emitting AMOLED display with 340ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil with humidity barrier. The back plane process flow is based on a 7 layer photolithography process with a CD=4um. We implement a 2T1C pixel engine and use commercial source driver IC made for LTPS. By using IGZO TFT and leveraging the extremely low off-current, we can switch-off the power to the source and gate driver while maintaining the image un-changed for several minutes. We demonstrate that, depending on the image content, low-refresh operation yields reduction in power consumption of up to 50% compared to normal (continuous) operation. We show that with further increase in resolution, the power saving through state retention will be even more significant.
- Published
- 2017
9. 14-1: Large-Area Processing of Solution Type Metal-Oxide in TFT Backplanes and Integration in Highly Stable OLED Displays
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Ryo Takata, Duy Vu Pham, Joris Maas, Jan-Laurens van der Steen, Ralf Anselmann, Anita Neumann, Ilias Katsouras, Gerwin H. Gelinck, and Marko Marinkovic
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Materials science ,Large-Area Processing ,HOL - Holst ,Nanotechnology ,02 engineering and technology ,Substrate (electronics) ,01 natural sciences ,Reliability (semiconductor) ,0103 physical sciences ,OLED ,Soluble Metal-Oxide Semiconductor ,010302 applied physics ,TS - Technical Sciences ,Industrial Innovation ,business.industry ,021001 nanoscience & nanotechnology ,Active-Matrix OLED Displays ,AMOLED ,Semiconductor ,Backplane ,Thin-film transistor ,Optoelectronics ,Nano Technology ,Electronics ,0210 nano-technology ,business ,Layer (electronics) - Abstract
Solution type metal-oxide semiconductor was processed on mass-production ready equipment and integrated in a backplane with ESL architecture TFTs. Excellent thickness uniformity of the semiconductor layer was obtained over the complete Gen1 glass substrate (320 mm x 352 mm), resulting in homogeneous TFT performance and bias stress reliability. An 85-ppi QVGA AMOLED display is demonstrated.
- Published
- 2017
10. 44-1: Invited Paper: Photolithography as Enabler of AMOLED Displays Beyond 1000 ppi
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Yu Iwai, Paul Heremans, Yoshitaka Kamochi, Pawel E. Malinowski, Marc Ameys, Jan-Laurens van der Steen, Tung Huei Ke, Peter Vicca, Auke Jisk Kronemeijer, S. Steudel, Gerwin H. Gelinck, and Atsushi Nakamura
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Photolithography ,Fabrication ,Materials science ,Computational lithography ,High resolution ,HOL - Holst ,010402 general chemistry ,01 natural sciences ,Virtual reality ,law.invention ,law ,OLED ,Ultra-high resolution ,Electronics ,Organic light emitting diode ,TS - Technical Sciences ,Industrial Innovation ,Pixel ,010405 organic chemistry ,business.industry ,0104 chemical sciences ,AMOLED ,Optoelectronics ,Nano Technology ,AMOLED displays ,business - Abstract
This paper describes the potential of hi-res display fabrication using OLED photolithography. We demonstrate 1250 ppi multicolor arrays, pixel scaling down to 3 μm pitch, integration in active displays, and improving lifetime after patterning (200 hours T75, smOLEDs). Photolithography can enable low-cost, high resolution displays for the 8K – VR era.
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- 2017
11. 32.2:Invited Paper: Integration of Flexible AMOLED Displays Using Oxide Semiconductor TFT Backplanes
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Gerwin H. Gelinck, Flora Li, Kris Myny, Jan-Laurens van der Steen, Tim Ellis, Edsger C. P. Smits, de Gerard Haas, Paul Heremans, Marc Ameys, Linda van Leuken, Sarah Schols, and Ashutosh Tripathi
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Materials science ,business.industry ,Electrical engineering ,Oxide ,Oxide thin-film transistor ,chemistry.chemical_compound ,Reliability (semiconductor) ,AMOLED ,Backplane ,chemistry ,Flexible display ,Thin-film transistor ,Process integration ,Optoelectronics ,business - Abstract
AMOLED displays using oxide TFTs and high-quality moisture barrier were fabricated on ultrathin, flexible plastic substrates to give maximum mechanical flexibility. Total display thickness is below 150μm, and repeated rollability at 1 cm roll radius has been demonstrated. Electrical/Mechanical characteristics and reliability of the flexible displays will be presented. cop. 2014 Society for Information Display.
- Published
- 2014
12. 20.1: Flexible AMOLED Display and Gate-driver with Self-aligned IGZO TFT on Plastic Foil
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Tim Ellis, Myriam Willegems, Peter Vicca, Yusuke Fukui, Brian Cobb, Tung Huei Ke, Gerwin H. Gelinck, Manoj Nag, Paul Heremans, Abhishek Kumar, Jan-Laurens van der Steen, Koji Obata, Soeren Steudel, Sarah Schols, Robert Muller, Marc Ameys, Steve Smout, Ajay Bhoolokam, Jan Genoe, and Kris Myny
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Materials science ,business.industry ,Display device ,law.invention ,AMOLED ,Backplane ,Thin-film transistor ,law ,Flexible display ,OLED ,Optoelectronics ,Photolithography ,business ,Layer (electronics) - Abstract
We present a QQVGA (160times120 with 3 sub-pixel) top-emitting AMOLED display with 85ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil. The back plane process flow is based on a 5 layer photolithography process. The aperture ratio of the top-emitting OLEDs is approx. 25%. For operation at 6 V supply voltage (VDD), the brightness of the display exceeds 150cd/m2. On the same substrate a 160 stage gate-driver was measured at FHD rate. cop. 2014 Society for Information Display.
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- 2014
13. Paper No 19.3: Back-Channel-Etch Process Flow for a-IGZO TFTs
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Myriam Willegems, Sarah Schols, Karin Tempelaars, Jan-Laurens van der Steen, Peter Vicca, Adrian Chasin, Kris Myny, Steve Smout, Maarten Rockele, Marc Ameys, David Cheyns, Ajay Bhoolokam, Manoj Nag, Soeren Steudel, Jan Genoe, Paul Heremans, and Guido Groeseneken
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AMOLED ,Materials science ,business.industry ,Thin-film transistor ,Electrical engineering ,Optoelectronics ,Dry etching ,business ,Polyethylene naphthalate ,FOIL method ,Amorphous solid ,Diode ,Electronic circuit - Abstract
In this study, the authors report high-quality amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) fabricated using a new back-channel-etch (BCE) process flow on Polyethylene Naphthalate (PEN) foil. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related circuits. The maximum processing temperature was limited to less than 165oC in order to ensure good overlay accuracy (< 1µm) on foil. The presented process flow differs from to previously reported by defining the Mo S/D contacts by dry etch prior to a-IGZO patterning. The TFTs show good electrical performance, including field-effect mobilities in the range of 15.0cm2/(V.s), sub-threshold slopes of 0.3V/decade and off-currents
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- 2013
14. 18.4L:Late-News Paper: Full Color Flexible Top-emission AMOLED Display on Polyethylene Naphthalate (PEN) Foil with Metal Oxide TFTs Backplane
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Paul Heremans, Kenji Okumoto, Gerwin H. Gelinck, Kris Myny, Iryna Yakimets, Flora Li, Karin Tempelaars, Soeren Steudel, Sarah Schols, Ashutosh Tripathi, Masaomi Shibata, Jan-Laurens van der Steen, Yusuke Fukui, Linda van Leuken, Kiyoyuki Morita, Myriam Willegems, Keiichi Otake, Bas van der Putten, Jan Genoe, Yuji Tanaka, and Steve Smout
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Atomic layer deposition ,AMOLED ,Materials science ,Passivation ,business.industry ,Thin-film transistor ,Optoelectronics ,Polyethylene naphthalate ,business ,Layer (electronics) ,FOIL method ,Display device - Abstract
We have developed a full color flexible top-emission AMOLED display with 80 ppi resolution using In-Ga-Zn-O TFT backplane on PEN foil under the maximum process temperature of 150 oC. Notwithstanding the low processing temperature, the TFTs with SiOx passivation layer show high reliability with VTH shift of less than 0.2 V at 10,000 seconds under bias-stress of -10 V. cop. 2013 Society for Information Display.
- Published
- 2013
15. Solving the technology barriers in flexible AMOLED displays
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Kris Myny, S. Steudel, Jan-Laurens van der Steen, Paul Heremans, Joris Maas, Sarah Schols, Gerwin H. Gelinck, Jan Genoe, Pawel E. Malinowski, Linda van Leuken, Manoj Nag, Edsger C. P. Smits, Tim Ellis, Hylke B. Akkerman, Ashutosh Tripathi, Tung Huei Ke, Flora Li, Madelon Rovers, and Marc Ameys
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Materials science ,Science ,Bent molecular geometry ,HOL - Holst ,High resolution ,Driving method ,Flexible plastics ,Mechanics, Materials and Structures ,OLED ,TS - Technical Sciences ,Flat panel displays ,Industrial Innovation ,Pixel ,business.industry ,Technology barriers ,Process (computing) ,Thin film transistors ,Flexible displays ,Process temperature ,OLED displays ,Organic light emitting diodes (OLED) ,Technology challenges ,AMOLED ,Flexible display ,Thin-film transistor ,Self-aligned ,Optoelectronics ,business - Abstract
In this paper, we present some of the technology challenges and process temperature trade-offs when realizing AM OLED displays on thin flexible plastic films that can be mechanically bent to a roll radius of ∼1 cm. We furthermore present complementary approaches to realize low-power, high resolution OLED displays using self-aligned IGZO TFT architecture; a novel driving method using a compact 2T-1C pixel engine. cop. 2014 JSAP.
- Published
- 2014
16. 30.2 Digital PWM-driven AMOLED display on flex reducing static power consumption
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Ashutosh Tripathi, Kris Myny, Paul Heremans, Soeren Steudel, Tim Ellis, Tung Huei Ke, Manoj Nag, Jan-Laurens van der Steen, Koji Obata, Sarah Schols, Jan Genoe, Joris Maas, Marc Ameys, and Gerwin H. Gelinck
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Reference currents ,Brightness ,Engineering ,Battery lifetime ,HOL - Holst ,Static power reduction ,Active matrix OLED ,Pixels ,Pulse width modulation ,law.invention ,Pixel intensity variations ,law ,Color depth ,OLED ,Mechanics, Materials and Structures ,TS - Technical Sciences ,Shift registers ,Industrial Innovation ,Pixel ,business.industry ,Transistor ,Electrical engineering ,Transistor parameters ,Active matrix ,Organic light emitting diodes (OLED) ,AMOLED ,Design and implementations ,Luminance ,Electronics ,business ,Pulse-width modulation ,Static power consumption - Abstract
The efficiency of small-molecule OLED devices increased substantially in recent years, creating opportunities for power-efficient displays, as only light is generated proportional to the subpixel intensity. However, current active matrix OLED (AMOLED) displays on foil do not validate this power-efficient advantage, as too much power is lost in the AM backplane. AMOLED displays use the analog voltage on the gate of a drive transistor (e.g. M1 in Fig. 30.2.1) to control the pixel current and hence the pixel brightness. Accurate and uniform pixel currents can only be obtained when transistor M1 is driven is saturation. In highresolution technologies on foil, transistor parameters W, L and the mobility μ are limited by technology, imposing a minimal V GS-VT to obtain sufficient current, i.e. V GS-VT > 4V for a-IGZO on foil [1]. Subsequently, to obtain saturation, VDS > 4V, which translates in a static backplane power loss surpassing the OLED power consumption (see red stars in Fig 30.2.1). However, when the OLED pixel impedance around a specific reference current can be matched along a display column line, the accurate pixel current control can be imposed by current DACs implemented in external silicon display column drivers. In this work, we operate M1 as a switch and pixel intensity variations are obtained using Pulse Width Modulation (PWM) of a predefined pixel current, i.e. 2μA/pixel [80*80μm2] (which corresponds in our OLED technology to a light output of 2000Cd/m2). When, in a future implementation the external DACs are calibrated at 0.2μA/pixel, the full brightness would correspond to the typical display brightness of a portable PC, i.e. 200Cd/m2. This concept enables us to reduce the display power voltage at full brightness from 8.2V in a classical AMOLED display on foil configuration to 5V (measured) and for future implementations even down to 4V (see Fig. 30.2.1). As the OLED current load remains equal, a corresponding static power reduction of the display (and increased battery lifetime) is obtained. Digital driving methods of AMOLED displays have been shown before. However, ΔΣ techniques [2] still integrate charge packets on the gate of M1 and hence do not solve the power issue on foil. Other PWM techniques [3] activate only a single active line in the linedriver yielding difficulties to obtain color depths above 6 bits. When multiple independent linedrivers are implemented and their output is multiplexed to alternately drive a single select line, a higher color depth can be obtained [4]. This leads however to a bulky linedriver, which is hard to get within an e.g. 80μm pitch. The design and implementation of a compact integrated linedriver on foil enabling multiple alternating active signals through a single shift register is demonstrated here. © 2014 IEEE.
- Published
- 2014
17. Design and realization of a flexible QQVGA AMOLED display with organic TFTs
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Jan-Laurens van der Steen, Sarah Schols, Jan Genoe, Martin Van Neer, Olaf R. Hild, Paul Heremans, Ashutosh Tripathi, Soeren Steudel, Kris Myny, Steve Smout, Gerwin H. Gelinck, Peter Vicca, Pieter Van Lieshout, Marcel Van Mil, Bas van der Putten, Erik van Veenendaal, Falk Schütze, and Publica
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Brightness ,Materials science ,HOL - Holst ,OTFT ,law.invention ,Biomaterials ,law ,AMOLED ,Materials Chemistry ,OLED ,Electrical and Electronic Engineering ,TS - Technical Sciences ,Industrial Innovation ,business.industry ,General Chemistry ,Mechatronics, Mechanics & Materials ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Flexible display ,Backplane ,Thin-film transistor ,Optoelectronics ,Photolithography ,Electronics ,business ,Voltage - Abstract
We present a QQVGA top emitting monochrome AMOLED display with 85dpi resolution using an organic TFT backplane on low temperature PEN-foil. The backplane process flow is based on a 7 layer photolithography process that yields a final mobility of the OTFT of ∼0.4 cm2/Vs. The aperture ratio of the top-emitting OLEDs is over 75%. For operation at 10 V supply voltage (VDD), the brightness of the display using red and green OLEDs exceeds 200 cd/m2.
- Published
- 2012
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