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Your search keyword '"wet annealing"' showing total 2 results
Start Over Descriptor "wet annealing" Topic amorphous oxide semiconductors
2 results on '"wet annealing"'

1. P‐193: Late‐News Poster: Low Temperature Solution Processed InZnO TFT Annealed in Wet Ambient.

Author

Jallorina, Michael Paul A., Bermundo, Juan Paolo S., Fujii, Mami N., Ishikawa, Yasuaki, and Uraoka, Yukiharu

Subjects
LOW temperatures, THIN film transistors, POSTERS, AMORPHOUS semiconductors, TRANSISTORS
Abstract

In this work, we show that utilizing a low temperature wet annealing ambient can greatly improve the electrical characteristics of a solution processed oxide thin‐film transistor (TFT). Compared to atmospheric annealed devices (∼0.74 cm2/Vs), characteristics such as mobility can be 4 times higher for the wet annealed devices (∼2.99 cm2/Vs). [ABSTRACT FROM AUTHOR]

Published
2019
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