1. Fast excited state diffusion in a-As2Se3 chalcogenide films.
- Author
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Regmi, Abhishesh, Ganjoo, Ashtosh, Zhao, Donghui, Jain, Himanshu, and Biaggio, Ivan
- Subjects
CHALCOGENIDE films ,BAND gaps ,AMORPHOUS substances ,MICROMETERS ,REFRACTIVE index measurement ,TIME-of-flight measurements - Abstract
Transient grating experiments after optical band-gap pulsed illumination of amorphous a-As
2 Se3 thin films reveal the existence of a well defined transport process occurring on length- and time-scales of the order of micrometers and microseconds, respectively. We tentatively assign this fast process, corresponding to a mobility of 0.04 ± 0.005 cm2 V-1 s-1 , to the diffusion of photoexcited charge carriers with microsecond lifetime. [ABSTRACT FROM AUTHOR]- Published
- 2012
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