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Positron annihilation spectroscopy and secondary ion mass spectrometry have been applied to study the evolution of polishing-induced defects in hydrothermally grown ZnO samples depending on the annealing temperature. Annealing of the as-grown ZnO wafer at 1200–1500 °C is found to lead to Li accumulation in the sub-surface layer, and significant reduction of Li content in the bulk. Polishing is shown to introduce vacancy complexes involving both V Zn and V O . Post-polishing annealing of hydrothermally grown ZnO with removed Li layer at 800 ° C reduces the concentration of polishing-induced defects below the detection limit.

The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation. © 2017 Author(s)., V.P. and I.M. acknowledge financial support from the Academy of Finland (Project Nos. 285809 and 293932). This work has been partially supported by the Spanish MINECO under Contract No. MAT2015-71035-R.

We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 .

Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS). Defect-related PL intensity in undoped GaN grown by hydride vapor phase epitaxy increases linearly with the concentration of related defects only up to 1016 cm−3. At higher concentrations, the PL intensity associated with individual defects tends to saturate, and accordingly, does not directly correlate with the concentration of defects. For this reason, SIMS analysis, with relatively high detection limits, may not be helpful for classifying unidentified point defects in GaN. Additionally, we highlight challenges in correlating defects identified by PL with those by PAS and DLTS methods.

Positron annihilation spectroscopy has been used to study vacancy defects formed in PA-MBE grown carbondoped indium nitride. The carbon concentration of doped samples varied in the range from 1.5 × 1017 cm–3 to 2.5 × 1018 cm–3. The experimental data indicates the existence of vacancy complexes containing both In and N vacancies, with the VIn component dominant from the positron annihilation point of view. The vacancy content increases along with increasing carbon content from less than 1 × 1016 cm–3 in the undoped sample up to at least 4 × 1016 cm–3 in the doped samples. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Various nominally undoped and Si-doped (InxGa1- x)2O3 thin films were grown by pulsed laser deposition in a continuous composition spread mode on c-plane α-sapphire and (100)-oriented MgO substrates. Positron annihilation spectroscopy in the Doppler broadening mode was used as the primary characterisation technique in order to investigate the effect of alloy composition and dopant atoms on the formation of vacancy-type defects. In the undoped samples, we observe a Ga2O3-like trend for low indium concentrations changing to In2O3-like behaviour along with the increase in the indium fraction. Increasing indium concentration is found to suppress defect formation in the undoped samples at [In] > 70 at. %. Si doping leads to positron saturation trapping in VIn-like defects, suggesting a vacancy concentration of at least mid-1018 cm-3 independent of the indium content.