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Hafnium zirconium oxide (HZO) has been studied intensively due to its potential application to memory and logic devices based on its outstanding dielectric and ferroelectric properties. Because many process factors can significantly impact the properties of HZO thin film, an optimized process or post‐treatment is necessary to ensure its performance. Herein, the effect of hydrogen on HZO thin film can make the film degraded. Analysis of the polarization–voltage hysteresis loops and I–V measurements indicate a leaky behavior in the film. To address this issue, post‐oxygen‐plasma treatment is performed on the film, which results in the decrease in hydrogen ions inside the film and consequently reduces the leakage current density. This finding can provide new insight into the effect of hydrogen incorporation for HZO thin films and methodology to remove leaky components inside ferroelectric films using O2 plasma treatment. [ABSTRACT FROM AUTHOR]

The authors describe the atomic layer deposition (ALD) of titanium oxysulfide films (TiO2−xSx). A new ALD chemistry of tetrakis(dimethylamido)titanium and hydrogen sulfide is proposed for fabricating amorphous titanium sulfide layers. They found that the resulting films subsequently underwent oxidation upon reactions under the ambient condition, resulting in TiO2−xSx. The resultant structures were analyzed by using x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy, indicative of the formation of TiO2−xSx. A combined study of Hall effect measurements and Mott–Schottky analysis showed n-type semiconductor behaviors possessing a good conductivity. Optical properties testify that the present system has a moderate bandgap in between the related binary end compounds such as TiS2 and TiO2. [ABSTRACT FROM AUTHOR]

We describe a fabrication strategy for preparing yttria-stabilized zirconia nanotube (YSZ-NT) arrays embedded in porous alumina membranes by means of template-directed atomic layer deposition (ALD) technique. The individual YSZ-NTs have a high aspect-ratio of well over 120, about ~ 110 nm in diameter, and ~ 14 µm in length. Interfacing the tube arrays with porous Pt was also introduced on the basis of partial etching technique in order to construct Pt/YSZ-NTs/Pt membrane electrode assembly (MEA) structures. The resulting YSZ-NTs MEAs show a 7 mm in diameter with a roughness factor of ~ 2. Area specific resistance was measured up to 1.84 Ω cm at 400 °C using H as fuel. [ABSTRACT FROM AUTHOR]

Atomic layer deposition (ALD) not only presents a direct way to prepare nanomaterials when combined with templates, but also allows surface engineering to fine-tune the properties of the material. Here, we review recent progress in the field of nanostructured materials and devices that have been fabricated by ALD. Various materials, including semiconducting, magnetic, noble metallic, and insulating materials, can be used to form three-dimensional (3D), complex nanostructures with controlled composition and physical properties. We begin this review with ALD nanomaterials that can be prepared from porous templates with a 2D pore arrangement, such as anodic aluminum oxide, and advance toward opal structures with a 3D pore arrangement. We also discuss surface engineering by ALD on existing nanowires/nanotubes, devices, and chemical patterns that has the potential for application in high-performance transistors, sensors, and green energy conversion. Finally, we provide perspectives for future device applications that could arise from ALD nanomaterials. [ABSTRACT FROM AUTHOR]

Nanostructured electrodes and their flexible integrated systems have great potential for many applications, including electrochemical energy storage, electrocatalysis and solid-state memory devices, given their ability to improve faradaic reaction sites by large surface area. Although many processing techniques have been employed to fabricate nanostructured electrodes onto flexible substrates, these present limitations in terms of achieving flexible electrodes with high mechanical stability. In this study, the adhesion, mechanical properties and flexibility of TiN nanotube arrays on a Pt substrate were improved using a Ti interlayer. Highly ordered and well-aligned TiN nanotube arrays were fabricated on a Pt substrate using a template-assisted method with an anodic aluminum oxide (AAO) template and atomic layer deposition (ALD) system. We show that with the use of a Ti interlayer between the TiN nanotube arrays and Pt substrate, the TiN nanotube arrays could perfectly attach to the Pt substrate without delamination and faceted phenomena. Furthermore, the I-V curve measurements confirmed that the electric contact between the TiN nanotube arrays and substrate for use as an electrode was excellent, and its flexibility was also good for use in flexible electronic devices. Future efforts will be directed toward the fabrication of embedded electrodes in flexible plastic substrates by employing the concepts demonstrated in this study. [ABSTRACT FROM AUTHOR]

In the photoelectrochemical (PEC) water splitting (WS) reactions, a photon is absorbed by a semiconductor, generating electron-hole pairs which are transferred across the semiconductor/electrolyte interface to reduce or oxidize water into oxygen or hydrogen. Catalytic junctions are commonly combined with semiconductor absorbers, providing electrochemically active sites for charge transfer across the interface and increasing the surface band bending to improve the PEC performance. In this review, we focus on transition metal (di)chalcogenide [TM(D)C] catalysts in conjunction with silicon photoelectrode as Earth-abundant materials systems. Surprisingly, there is a limited number of reports in Si/TM(D)C for PEC WS in the literature. We provide almost a complete survey on both layered TMDC and non-layered transition metal dichalcogenides (TMC) co-catalysts on Si photoelectrodes, mainly photocathodes. The mechanisms of the photovoltaic power conversion of silicon devices are summarized with emphasis on the exact role of catalysts. Diverse approaches to the improved PEC performance and the proposed synergetic functions of catalysts on the underlying Si are reviewed. Atomic layer deposition of TM(D)C materials as a new methodology for directly growing them and its implication for low-temperature growth on defect chemistry are featured. The multi-phase TM(D)C overlayers on Si and the operation principles are highlighted. Finally, challenges and directions regarding future research for achieving the theoretical PEC performance of Si-based photoelectrodes are provided. [ABSTRACT FROM AUTHOR]