1. Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds.
- Author
-
Sochacki, T., Amilusik, M., Fijalkowski, M., Lucznik, B., Weyher, J.L., Grzegory, I., Kucharski, R., Iwinska, M., and Bockowski, M.
- Subjects
- *
CRYSTAL growth , *HYDRIDES , *VAPOR phase epitaxial growth , *GALLIUM nitride , *CRYSTAL structure , *CRYSTALLOGRAPHY - Abstract
One of the main advantages of the hydride vapor phase epitaxy (HVPE) method for crystallizing bulk gallium nitride is the crystallization of GaN with a relatively high growth rate (>100 μm/h). In this paper various growth rates in the c -direction during crystallization of GaN by HVPE on ammonothermally grown GaN crystals are determined and examined. The influence of the highest (380 μm/h) and the lowest (40 μm/h) growth rate on the structural quality and purity of the HVPE-GaN crystals is analyzed. The optimal macroscopically stable growth rate (without cracks and pits) and the way of achieving it are presented and discussed. [ABSTRACT FROM AUTHOR]
- Published
- 2014
- Full Text
- View/download PDF