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Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds.
- Source :
-
Journal of Crystal Growth . Dec2014, Vol. 407, p52-57. 6p. - Publication Year :
- 2014
-
Abstract
- One of the main advantages of the hydride vapor phase epitaxy (HVPE) method for crystallizing bulk gallium nitride is the crystallization of GaN with a relatively high growth rate (>100 μm/h). In this paper various growth rates in the c -direction during crystallization of GaN by HVPE on ammonothermally grown GaN crystals are determined and examined. The influence of the highest (380 μm/h) and the lowest (40 μm/h) growth rate on the structural quality and purity of the HVPE-GaN crystals is analyzed. The optimal macroscopically stable growth rate (without cracks and pits) and the way of achieving it are presented and discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 407
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 98807455
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2014.09.007