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Your search keyword '"Ji, XueQiang"' showing total 2 results
Start Over Author "Ji, XueQiang" Topic band gaps
2 results on '"Ji, XueQiang"'

1. Investigation and Comparison of the Performance for β-Ga 2 O 3 Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate.

Author

Yan, Zuyong, Li, Shan, Liu, Zeng, Yue, Jianying, Ji, Xueqiang, Wang, Jinjin, Hou, Shanglin, Wu, Gang, Lei, Jingli, Sun, Guobin, Li, Peigang, and Tang, Weihua

Subjects
EPITAXIAL layers, SUBSTRATES (Materials science), EPITAXY, BAND gaps, PHOTODETECTORS
Abstract

Ga2O3, with its large band gap, is a promising material suitable for utilization in solar-blind photodetection. Sapphire with a higher lattice match with Ga2O3 was used as the substrate for epitaxial growth of Ga2O3. Here, the epitaxial layers of Ga2O3 were deposited by MOCVD on patterned sapphire substrates. The structure of epitaxial Ga2O3 layers on patterned substrates has been identified by X-ray diffractometry. To investigate the influence of the patterned substrates on the formation of epitaxial layers, thin Ga2O3 layers were grown on a flat sapphire substrate under the same conditions. Both types of samples were β-phase. However, no improvement in the layers' crystalline quality was discovered when utilizing patterned sapphire substrates. In addition, the performance of the obtained two types of Ga2O3 photodetectors was compared. The photoelectric properties, such as responsivity, response speed, and detection capability, were different in the case of flat samples. [ABSTRACT FROM AUTHOR]

Published
2024
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2. A review of gallium oxide-based power Schottky barrier diodes.

Author

Ji, Xueqiang, Lu, Chao, Yan, Zuyong, Shan, Li, Yan, Xu, Wang, Jinjin, Yue, Jianying, Qi, Xiaohui, Liu, Zeng, Tang, Weihua, and Li, Peigang

Subjects
*SCHOTTKY barrier diodes, *GALLIUM, *ELECTRIC breakdown, *ELECTRONIC equipment, *BAND gaps, *PERMITTIVITY
Abstract

Gallium oxide (Ga2O3) is a representative of ultra-wide bandgap semiconductors, with a band gap of about 4.9 eV. In addition to a large dielectric constant and excellent physical and chemical stability, Ga2O3 has a theoretical breakdown electric field strength of more than 8 MV cmâˆ'1, which is 27 times more than that of Si and about twice as large as that of SiC and GaN. It is guaranteed that Ga2O3 has irreplaceable applications in ultra-high-power (1â€"10 kW) electronic devices. Unfortunately, due to the difficulty of p-type doping of Ga2O3, the full Ga2O3-based bipolar devices face more difficulties, and the unipolar Ga2O3 power Schottky diodes are feasible, but substantial progress has been made in recent years. In this article, we review the advanced progress and important achievements of the state-of-the-art Ga2O3-based power Schottky barrier diodes, and provide staged guidance for the further development of Ga2O3 power devices. Multiple types of device architectures, including basic structure, edge terminal processing, field-plated, trench and heterojunction pâ€"n structure, will be discussed in detail. [ABSTRACT FROM AUTHOR]

Published
2022
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