1. Epitaxial growth of BaHfO buffer layer and its structure degeneration analysed by Raman spectrum.
- Author
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Zheng, Jiahui, Fan, Feng, Yan, Xiangfa, Lu, Yuming, Liang, Yu, Bai, Chuanyi, Liu, Zhiyong, Guo, Yanqun, and Cai, Chuanbing
- Subjects
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EPITAXY , *BARIUM compounds , *RAMAN spectra , *X-ray diffraction , *CRYSTAL structure - Abstract
BaHfO (BHO) has been proposed as a new cap layer material for YBaCuO (YBCO) coated conductors. Highly c-axis oriented BHO cap layer has been deposited on ion-beam assisted deposition-MgO buffered Hastelloy tapes by direct-current-magnetron sputtering method. The epi-growth of BHO films combined with its properties is investigated in details. The degenerated cubic crystal structure of BHO film is confirmed by Raman spectrum analysis. XRD θ-2θ scan, φ-scan and ω-scan reveal an excellent c-axis alignment with good in-plane and out-of-plane textures for BHO cap layers. SEM and AFM investigations show BHO cap layer a dense and crack-free morphology. Subsequently pure c-axis orientation YBCO film was epitaxial grown on such BHO cap layer successfully, shown BaHfO a potential cap layer material for coated conductors. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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