Liao, Yaqiang, Chen, Tao, Wang, Jia, Cai, Wentao, Ando, Yuto, Yang, Xu, Watanabe, Hirotaka, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Chen, Kevin J., and Amano, Hiroshi
In this work, a deliberate etching-based top-down approach is proposed to fabricate the GaN nanorod (NR) Schottky barrier diode (SBD). As a key step during the fabrication, the impact of the wet-etching process on device performance is systematically studied. By virtue of the reduced surface states at the sidewall, the performance of NR SBD with the wet-etching process is substantially improved, delivering a forward turn-on voltage of 0.65 V, a current density of ∼10 kA/cm2 at 3 V, an ideality factor of 1.03, an ON/OFF current ratio of ∼1010, and no severe current collapse, along with a reverse breakdown voltage of 772 V. [ABSTRACT FROM AUTHOR]