1. Surface passivation and oxide encapsulation to improve optical properties of a single GaAs quantum dot close to the surface
- Author
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Christian Schimpf, Santanu Manna, Barbara Lehner, Michele B. Rota, Rinaldo Trotta, Huiying Huang, Saimon Filipe Covre da Silva, Armando Rastelli, and Marcus Reindl
- Subjects
Photoluminescence ,Photon ,Materials science ,Passivation ,Nanophotonics ,General Physics and Astronomy ,Physics::Optics ,FOS: Physical sciences ,02 engineering and technology ,Applied Physics (physics.app-ph) ,010402 general chemistry ,Epitaxy ,01 natural sciences ,Overlayer ,Condensed Matter::Materials Science ,Surface states ,Quantum Physics ,business.industry ,Physics - Applied Physics ,Surfaces and Interfaces ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,3. Good health ,0104 chemical sciences ,Surfaces, Coatings and Films ,Quantum dot ,Optoelectronics ,0210 nano-technology ,business ,Quantum Physics (quant-ph) - Abstract
Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of less than 100 nm. This demands a surface passivation scheme, which could be useful to lower the density of surface states. To address this issue, sulphur passivation with dielectric overlayer as an encapsulation is used for surface to QD distances of 40 nm, which results in the partial recovery of emission linewidths to bulk values as well as in the increase of the photoluminescence intensity., Comment: 24 pages, 8 figures
- Published
- 2022
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