1. In-situ hydrothermal growth of MoS2 absorber layer for planar heterojunction solar cells
- Author
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Shenglong Liu, Guilin Chen, Fengying Wu, Liquan Yao, Hu Li, Wenjuan Chen, Wenwei Lin, Shuiyuan Chen, Dong Wei, and Limei Lin
- Subjects
Electron mobility ,Materials science ,Renewable Energy, Sustainability and the Environment ,business.industry ,Doping ,Heterojunction ,Substrate (electronics) ,engineering.material ,law.invention ,Coating ,law ,Solar cell ,engineering ,Optoelectronics ,General Materials Science ,Thin film ,business ,Layer (electronics) - Abstract
MoS2 thin film is deposited on ITO/CdS substrate by in-situ hydrothermal method, which is expected to be a potential absorber material for planar heterojunction solar cell due to its high absorber coefficient and carrier mobility. The CdS buffer layer provides a robust template for the quasi-epitaxial growth of MoS2 with (0 0 2) preferred orientation by enjoying the analogical hexagonal structures and the shared sulfur atoms, resulting in a benign interface of CdS/MoS2. Then a device with ITO/TiO2/CdS/MoS2/Carbon-Ag structure is assembled after coating carbon-Ag electrode. The effects of the growth characteristics, morphology changes and optical properties of MoS2 on the device performance are studied systematically. Finally, a primary efficiency of 0.12% is achieved using a P-type MoS2 absorber with a thickness of 305 nm, exhibiting an outstanding stability. The one-dimensional solar cell capacitance simulator (SCAPS) is further used to reveal the bottleneck of device performance. After optimizing the doping density (1 × 1015 cm−3) and defect density (
- Published
- 2021
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