1. Rapid Characterization of SiC Crystals by Full-wafer Photoluminescence Imaging under Below-gap Excitation
- Author
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H. Isono, Norihiro Hoshino, Hiroki Sugimoto, and Michio Tajima
- Subjects
Materials science ,Photoluminescence ,business.industry ,Mechanical Engineering ,Dislocations ,Below-gap excitation ,Condensed Matter Physics ,Characterization (materials science) ,Imaging ,Optics ,Mapping ,Mechanics of Materials ,Full-wafer inspection ,Optoelectronics ,General Materials Science ,Wafer ,Photoluminescence excitation ,Dislocation ,business ,Structural defects ,Excitation ,Diode ,Visible spectrum - Abstract
We demonstrated the rapid and nondestructive observation of structural defects in SiC wafers by full-wafer photoluminescence (PL) imaging under below-gap excitation. The use of visible light emitting diode arrays as an excitation source is essential to the simplification of an optical system and the light excitation covering the whole wafer. We were able to observe the defect-related intensity patterns similar to those obtained by conventional laser-scanning PL mapping. The measurement time of the PL imaging was more than fifty times faster than that of the PL mapping.
- Published
- 2009