1. Memory modes of ferroelectric field effect transistors
- Author
-
Hidetoshi Tsuchiya and Kentaro Ito
- Subjects
Materials science ,business.industry ,Electrical engineering ,Mode (statistics) ,Gate insulator ,Experimental Devices ,Condensed Matter Physics ,Ferroelectricity ,Electronic, Optical and Magnetic Materials ,Condensed Matter::Materials Science ,Materials Chemistry ,Optoelectronics ,Field-effect transistor ,Electrical and Electronic Engineering ,Thin film ,business ,Device parameters - Abstract
Effects of traps on the memory characteristics of ferroelectric field effect transistors with the metat-ferroelectric-insulator-semiconductor structure were theoretically analyzed. Various modes of operation, i.e. the polarization-limited mode, trap-limited mode, critical field-limited mode, MNOS mode and probability-limited mode, were derived depending on the device parameters. Experimental devices with gate insulator BaTiO3 or PLZT were fabricated by using thin film SnO2 and thin film Te. The memory characteristics of these devices were interpreted in terms of the trap-limited mode and MNOS mode, respectively.
- Published
- 1977