32 results on '"Mikhail S. Dunaevskiy"'
Search Results
2. Studying the Formation of Single-Layer Graphene on the Surface of SiC
- Author
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S. P. Lebedev, E. V. Gushchina, I. A. Eliseev, Mikhail S. Dunaevskiy, and Alexander A. Lebedev
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010302 applied physics ,Kelvin probe force microscope ,Surface (mathematics) ,Materials science ,business.industry ,Graphene ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Surfaces, Coatings and Films ,law.invention ,symbols.namesake ,law ,0103 physical sciences ,Microscopy ,symbols ,Single layer graphene ,Optoelectronics ,Thin film ,0210 nano-technology ,business ,Raman spectroscopy ,Bilayer graphene - Abstract
Regions of single-layer- and bilayer graphene on the surface of thermally processed 4H-SiC substrates are studied using Kelvin probe force microscopy and Raman spectroscopy. We establish experimentally the key parameters of the adopted graphene growth technique which enables the fraction of bilayer graphene to be reduced to a minimum, while samples with a fraction of single-layer graphene as high as 95% are obtained.
- Published
- 2019
3. High Quality Graphene Grown by Sublimation on 4H-SiC (0001)
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Joerg Pezoldt, Alexander N. Smirnov, V. Yu. Davydov, Mikhail S. Dunaevskiy, I. A. Eliseyev, E. V. Gushchina, Kirill A. Bokai, D. Yu. Usachov, Alexander A. Lebedev, and Sergey P. Lebedev
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010302 applied physics ,Electron mobility ,Materials science ,Graphene ,business.industry ,Thermal decomposition ,Crystal growth ,02 engineering and technology ,Atmospheric temperature range ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Epitaxy ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,law ,0103 physical sciences ,Optoelectronics ,Sublimation (phase transition) ,Thin film ,0210 nano-technology ,business - Abstract
The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC substrate in an argon environment have been studied by a large set of analytical techniques. It is shown that the results of a complex study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons at room temperature approached 6000 cm2/(V s).
- Published
- 2018
4. Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates
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Alexander A. Lebedev, Sergey P. Lebedev, Prokhor A. Alekseev, A. O. Mikhailov, G. E. Cirlin, A. I. Khrebtov, I. V. Ilkiv, A. D. Bouravleuv, and Mikhail S. Dunaevskiy
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010302 applied physics ,Materials science ,Graphene ,business.industry ,Schottky barrier ,Nanowire ,chemistry.chemical_element ,02 engineering and technology ,Substrate (electronics) ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Epitaxy ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,Catalysis ,chemistry ,law ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Arsenic - Abstract
The electrical properties of GaAs nanowires grown on a 6H-SiC (0001) substrate covered with graphene single layers and bilayers are studied. The nanowires are grown by molecular-beam epitaxy, with gold as a catalyst. The electrical properties are studied by measuring and analyzing the current–voltage characteristics of single nanowires vertically grown on a substrate. Numerical simulation of the experimental current–voltage curves revealed the presence of a ~0.6-V-high Schottky barrier between the nanowires and graphene. The appearance of the barrier is due to the formation of excess arsenic at the nanowire/graphene interface.
- Published
- 2018
5. Electromechanical Switch Based on InxGa1 –xAs Nanowires
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Prokhor A. Alekseev, V. A. Sharov, Rodion R. Reznik, V. L. Berkovits, Mikhail S. Dunaevskiy, and G. E. Cirlin
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0301 basic medicine ,X-ray absorption spectroscopy ,Materials science ,Orders of magnitude (temperature) ,business.industry ,Nanowire ,02 engineering and technology ,Bending ,Conductivity ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,03 medical and health sciences ,Scanning probe microscopy ,030104 developmental biology ,Modulation ,Optoelectronics ,0210 nano-technology ,business ,Surface states - Abstract
Piezoresistance effect of the InxGa1 –xAs nanowires was studied by scanning probe microscopy. The effect was investigated by measuring of the I–V curves with simultaneous bending of the nanowire by the probe. A modulation of the conductivity of In0.85Ga0.15As NWs induced by a mechanical stress exceeding three orders of magnitude was observed. For the explanation a model based on the surface states is presented. Such an observation opens new ways for the design of electromechanical switches with record parameters.
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- 2018
6. Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)
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V. Yu. Davydov, V. S. Levitskii, D. Yu. Usachov, O. Yu. Vilkov, Prokhor A. Alekseev, A. A. Lebedev, Alexander N. Smirnov, Mikhail S. Dunaevskiy, I. A. Eliseyev, Artem G. Rybkin, and Sergey P. Lebedev
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Materials science ,Absorption spectroscopy ,Photoemission spectroscopy ,02 engineering and technology ,01 natural sciences ,Electron spectroscopy ,law.invention ,Condensed Matter::Materials Science ,symbols.namesake ,law ,0103 physical sciences ,Physics::Atomic and Molecular Clusters ,Spectroscopy ,010302 applied physics ,business.industry ,Graphene ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,symbols ,Optoelectronics ,0210 nano-technology ,business ,Raman spectroscopy ,Bilayer graphene ,Graphene nanoribbons - Abstract
The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.
- Published
- 2017
7. GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells
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V. A. Sharov, Erkki Lähderanta, I. P. Soshnikov, Mikhail S. Dunaevskiy, Prokhor A. Alekseev, G. E. Cirlin, Pavel Geydt, Rodion R. Reznik, and V. V. Lysak
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010302 applied physics ,Photocurrent ,Materials science ,business.industry ,Nanowire ,02 engineering and technology ,Bending ,Deformation (meteorology) ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Piezoelectricity ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,0103 physical sciences ,Optoelectronics ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Short circuit ,Order of magnitude ,Wurtzite crystal structure - Abstract
AbstractThe properties of the hybrid energy sources “piezoelectric nanogenerator-solar cell” based on GaAs nanowires with the wurtzite crystal structure were investigated. Measurements were performed by the bending of the nanowire by the probe of the atomic force microscope with simultaneous recording of short circuit current in dark and illuminated conditions. We show that a piezoelectric current pulse of ~10 pA arises in the “nanowire-probe” circuit during the deformation of nanowire by the AFM probe. Under laser illumination, the value of the pulse increases by two orders of magnitude as a result of the piezophototronic effect. Deformation of the nanowire boosts the photocurrent by 40% up to 0.5 nA.
- Published
- 2018
8. Investigation of the stability of spatial modes in quarter-disk resonators
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Mikhail S. Dunaevskiy and Prokhor A. Alekseev
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History ,Resonator ,Optics ,Materials science ,business.industry ,business ,Stability (probability) ,Computer Science Applications ,Education ,Quarter (Canadian coin) - Abstract
In this work, the stability of short-wavelength spatial modes in quarter-disk cavities was studied. It was found that in such resonators, short-wave modes (with wavelengths λ smaller than the radius R of the quarter-disk λ<0.1 lack total internal reflection modes.
- Published
- 2020
9. Effect of the Uniaxial Compression on the GaAs Nanowire Solar Cell
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V. A. Sharov, B R Borodin, G E Cirlin, Prokhor A. Alekseev, Mikhail S. Dunaevskiy, and Rodion R. Reznik
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Materials science ,Nanowire ,02 engineering and technology ,Substrate (electronics) ,01 natural sciences ,Article ,Gallium arsenide ,law.invention ,piezoresistance ,chemistry.chemical_compound ,law ,0103 physical sciences ,Solar cell ,Electrical and Electronic Engineering ,Wurtzite crystal structure ,010302 applied physics ,polarization ,business.industry ,Mechanical Engineering ,GaAs ,piezophototronic ,Conductive atomic force microscopy ,021001 nanoscience & nanotechnology ,Piezoelectricity ,gallium arsenide ,solar cell ,Solar cell efficiency ,wurtzite ,chemistry ,Control and Systems Engineering ,nanowire ,zinc blende ,Optoelectronics ,piezoelectric ,0210 nano-technology ,business - Abstract
Research regarding ways to increase solar cell efficiency is in high demand. Mechanical deformation of a nanowire (NW) solar cell can improve its efficiency. Here, the effect of uniaxial compression on GaAs nanowire solar cells was studied via conductive atomic force microscopy (C-AFM) supported by numerical simulation. C-AFM I&ndash, V curves were measured for wurtzite p-GaAs NW grown on p-Si substrate. Numerical simulations were performed considering piezoresistance and piezoelectric effects. Solar cell efficiency reduction of 50% under a &minus, 0.5% strain was observed. The analysis demonstrated the presence of an additional fixed electrical charge at the NW/substrate interface, which was induced due to mismatch between the crystal lattices, thereby affecting the efficiency. Additionally, numerical simulations regarding the p-n GaAs NW solar cell under uniaxial compression were performed, showing that solar efficiency could be controlled by mechanical deformation and configuration of the wurtzite and zinc blende p-n segments in the NW. The relative solar efficiency was shown to be increased by 6.3% under &minus, 0.75% uniaxial compression. These findings demonstrate a way to increase efficiency of GaAs NW-based solar cells via uniaxial mechanical compression.
- Published
- 2020
10. Photodegradation of surface passivated GaAs nanowires
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Prokhor A. Alekseev, V. L. Berkovits, Alexander N. Smirnov, Harri Lipsanen, V. Yu. Davydov, Mikhail S. Dunaevskiy, and Tuomas Haggren
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History ,Materials science ,Photoluminescence ,Passivation ,business.industry ,Nanowire ,Nitride ,Orders of magnitude (numbers) ,Computer Science Applications ,Education ,Optoelectronics ,Laser power scaling ,business ,Photodegradation ,Intensity (heat transfer) - Abstract
Efficiency of in situ AlGaAs and GaP and ex situ nitride surface passivation of p+ GaAs nanowires was studied. The efficiency was estimated by comparing of the photoluminescence intensity of the passivated nanowires with the unpassivated nanowire. The AlGaAs and nitride passivation lead to the increasing of the PL intensity by three orders of magnitude while the GaP passivation increases PL intensity only by one order. Photodegradation of the passivated NWs under intensive laser illumination was observed. AlGaAs, GaP and nitride passivated NWs photodegrade after one-minute exposure under laser power densities of 500, 300 and 30 kW/cm2, respectively.
- Published
- 2020
11. The effect of optical cooling of the SPM probe in the optomechanical resonator
- Author
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V. A. Sharov, Mikhail S. Dunaevskiy, Andrey N. Baranov, and Prokhor A. Alekseev
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Resonator ,Materials science ,business.industry ,Optoelectronics ,business - Abstract
Optomechanical resonators formed by the surface of an emitting semiconductor laser and the reflective surface of the probe of scanning probe microscope (SPM) were studied. The use of scanning probe microscopy techniques allowed studying the properties of such optomechanical resonators in details. The effect of optical cooling of an SPM probe in an optomechanical resonator was investigated by measuring the spectra of thermal vibrations of an SPM probe. Minimal achievable temperatures of SPM probe cooling were experimentally established.
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- 2019
12. Triboelectric current generation in InP
- Author
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Mikhail S. Dunaevskiy, Prokhor A. Alekseev, G. E. Cirlin, V. A. Sharov, and Rodion R. Reznik
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History ,Materials science ,business.industry ,Piezoelectricity ,Computer Science Applications ,Education ,chemistry.chemical_compound ,Semiconductor ,chemistry ,Indium phosphide ,Optoelectronics ,business ,Energy harvesting ,Current density ,Electrical conductor ,Triboelectric effect ,Voltage - Abstract
Energy harvesting is an area that presents the greatest potential for powering wireless low-energy electronics. Development of semiconductor-based energy harvesting is of interest. Herein we focus on studying two different energy harvesting mechanisms in indium phosphide. Piezoelectric harvesting was checked by bending vertical InP nanowires with conductive atomic force microscope (AFM) probe and simultaneously detecting current passing through the probe. No current pulses were observed that we associate with surface trapping of piezoinduced carriers. Triboelectric generation was studied by creating frictional contact between AFM tip and metal-dielectric-semiconductor (MIS) interface formed by InP layer covered with native oxide. Current peaks of 320 pA amplitude corresponding to the current density around 2.3 kA/m2 were observed under sliding reciprocating motion of the tip during AFM scanning. Achieved current density was higher than in polymer- and silicon-based triboelectric structures. The open-circuit voltage value exceeded 15 mV and the output electric power was 35 W/m2.
- Published
- 2019
13. Half-disk laser: insight into the internal mode structure of laser resonators
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Alexei N. Baranov, Vladislav V. Dudelev, A. M. Monakhov, Prokhor A. Alekseev, Richard Arinero, Mikhail S. Dunaevskiy, Grigorii S. Sokolovskii, Roland Teissier, Institut d’Electronique et des Systèmes ( IES ), Université de Montpellier ( UM ) -Centre National de la Recherche Scientifique ( CNRS ), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
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Physics ,Geometrical optics ,business.industry ,Physics::Optics ,Near and far field ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,law.invention ,Resonator ,[SPI]Engineering Sciences [physics] ,Optics ,law ,Optical cavity ,0103 physical sciences ,[ SPI ] Engineering Sciences [physics] ,Disk laser ,Emission spectrum ,Whispering-gallery wave ,010306 general physics ,0210 nano-technology ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
Usually electromagnetic modes inside a laser resonator are a matter of the theoretical studies. In a sense we manage "to have a look into a whispering gallery mode (WGM) resonator" and observe how the resonator modes arrange in reality. The picture occurs to be quite different from the commonly used Bessel modes in a disk resonator. A chance to explore optical modes inside a resonator appears in a WGM laser with a cleaved cavity. The flat laser facet gives an opportunity to study both far and near field patterns formed by different modes. In this research we use a high resolution technique of detection of laser emission based on an atomic force microscope, which allowed us to visualize even high Q modes normally sealed inside the resonator. This information was completed with spatially resolved emission spectra and far-field patterns measured using an infrared camera. The analysis of the obtained results using both wave and geometrical optics approaches and finite elements simulations showed that emission of the studied devices is governed by a few low order optical modes experiencing a small number of reflections from the resonator walls. These modes can be considered as counter propagating Gaussian beams and their interference at the laser facet was also observed in the experiment. This work showed that, contrary to conventional ridge or surface emitting lasers, in such deformed disk resonators outputs of different optical modes are spatially separated and can be studied individually along the cleaved facet of the laser.
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- 2018
14. Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density
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T. V. Lvova, Mikhail S. Dunaevskiy, Prokhor A. Alekseev, D. O. Filatov, Alexey V. Nezhdanov, Aleksander I. Mashin, V. L. Berkovits, and Vladimir P. Ulin
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Materials science ,Photoluminescence ,Passivation ,business.industry ,Mechanical Engineering ,Nanowire ,Bioengineering ,Nanotechnology ,General Chemistry ,Conductive atomic force microscopy ,Nitride ,Conductivity ,Condensed Matter Physics ,Microscopy ,Optoelectronics ,General Materials Science ,Luminescence ,business - Abstract
Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.
- Published
- 2014
15. Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires
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Erkki Lähderanta, Pavel Geydt, and Mikhail S. Dunaevskiy
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010302 applied physics ,Materials science ,business.industry ,Nanowire ,Scanning gate microscopy ,Nanotechnology ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Scanning probe microscopy ,Semiconductor ,0103 physical sciences ,0210 nano-technology ,business - Published
- 2017
16. Spatial mode structure in a half-disk cavity laser
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Alexei N. Baranov, Mikhail S. Dunaevskiy, A. M. Monakhov, Roland Teissier, Vladislav V. Dudelev, Grigorii S. Sokolovskii, and Prokhor A. Alekseev
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010302 applied physics ,Materials science ,business.industry ,02 engineering and technology ,Laser pumping ,Injection seeder ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,law.invention ,Optics ,law ,Quantum dot laser ,0103 physical sciences ,Optoelectronics ,Laser power scaling ,Whispering-gallery wave ,0210 nano-technology ,business ,Quantum well ,Tunable laser - Abstract
We experimentally and theoretically examined the mode structure of half-disk lasers fabricated by cleaving whispering gallery mode (WGM)-disk lasers. The WGM lasers with a radii R of 50–150 μm emitting near 2.2 μm were fabricated using the GaSb-based quantum well structure [1]. The cleavage usually passes not through the centre of the disk with the deviation δ/R up to 20 % (Fig. 1a). Recently we have demonstrated that in the half-disk lasers the output beam is formed by optical modes located at a distance of 5–20 μm from the disk periphery [2], whereas in the full disk the light propagates along the disk wall, much closer to its edges.
- Published
- 2017
17. Direct measurement of elastic modulus of InP nanowires with Scanning Probe Microscopy in PeakForce QNM mode
- Author
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Erkki Lähderanta, Tuomas Haggren, Prokhor A. Alekseev, Mikhail S. Dunaevskiy, Harri Lipsanen, J. P. Kakko, Pavel Geydt, LUT University, St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO), Russian Academy of Sciences, Department of Micro and Nanosciences, Department of Electronics and Nanoengineering, Aalto-yliopisto, and Aalto University
- Subjects
010302 applied physics ,History ,Materials science ,business.industry ,Nanowire ,Modulus ,Nanotechnology ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Computer Science Applications ,Education ,Scanning probe microscopy ,0103 physical sciences ,Optoelectronics ,Elasticity (economics) ,0210 nano-technology ,business ,Elastic modulus ,Wurtzite crystal structure - Abstract
In this manuscript, we present the study of elastic properties of InP nanowires with help of scanning probe microscope in advanced PeakForce Tapping® regime. The measuring method was developed in order to investigate the Young's modulus of these cone-shaped structures with significant accuracy. The difference in InP elasticity for wurtzite phase and zinc- blende phase was revealed. It was shown that elastic modulus of InP nanowires significantly increases from 60 GPa to more than 100 GPa when diameter of a nanowire is reduced below 50 nm. The core-shell model for InP nanowire was used for the explanation of this effect.
- Published
- 2016
18. MoSe2/graphene/6H-SiC heterojunctions: energy band diagram and photodegradation
- Author
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Mikhail S. Dunaevskiy, V. A. Sharov, Prokhor A. Alekseev, Alexander N. Smirnov, Erkki Lähderanta, V. Yu. Davydov, F. A. Benimetskiy, Alexander A. Lebedev, S. P. Lebedev, and B R Borodin
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Materials science ,business.industry ,Graphene ,Heterojunction ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,law.invention ,law ,Band diagram ,Materials Chemistry ,Optoelectronics ,Water splitting ,Electrical and Electronic Engineering ,business ,Photodegradation - Published
- 2019
19. Scanning probe microscopy of AlGaAs/GaAs diode after partial electrical breakdown
- Author
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Prokhor A. Alekseev, A A Podoskin, Mikhail S. Dunaevskiy, A O Mikhaylov, and Sergey O. Slipchenko
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History ,Materials science ,business.industry ,education ,Electrical breakdown ,Oxide ,Computer Science Applications ,Education ,Scanning probe microscopy ,Algaas gaas ,chemistry.chemical_compound ,chemistry ,Optoelectronics ,Breakdown voltage ,business ,Voltage ,Semiconductor heterostructures ,Diode - Abstract
Scanning probe microscopy allows to study surface processes in semiconductor heterostructures. This work shows the investigation of topography and surface potential distribution in AlGaAs/GaAs p-n diode after applied reverse voltage. Formation of oxide on the surface in the area of p-n junction was found due to increasing of the applied reverse voltage. Formed oxide increases a breakdown voltage by 20%.
- Published
- 2018
20. Kelvin probe microscopy of MoSe2 monolayers on graphene
- Author
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S. P. Lebedev, Prokhor A. Alekseev, Mikhail S. Dunaevskiy, Alexander A. Lebedev, B R Borodin, and F. A. Benimetskiy
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010302 applied physics ,Kelvin probe force microscope ,History ,Materials science ,Thin layers ,business.industry ,Graphene ,Doping ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Computer Science Applications ,Education ,law.invention ,Scanning probe microscopy ,law ,0103 physical sciences ,Monolayer ,Optoelectronics ,Work function ,0210 nano-technology ,business ,Electronic band structure - Abstract
This work presents the results of an investigation of thin layers of MoSe2 on graphene by Scanning Probe Microscopy (SPM) methods. Dependences of the surface potential and work function on the number of monolayers of the structure are presented. The dependence of the surface potential on air humidity is shown. The band structure and doping of the MoSe2 monolayer on graphene was determined. These data can be important for detecting of the number of MoSe2 layers and for designing nanodevices, because the surface potential has a strong influence on the operation of such devices.
- Published
- 2018
21. AFM visualization of half-disk WGM laser modes
- Author
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Mikhail S. Dunaevskiy, Grigorii S. Sokolovskii, A. M. Monakhov, Alexei N. Baranov, Vladislav V. Dudelev, Prokhor A. Alekseev, and Roland Teissier
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010302 applied physics ,Materials science ,business.industry ,Physics::Optics ,Cleavage (crystal) ,02 engineering and technology ,Laser pumping ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,law.invention ,Visualization ,Optics ,law ,0103 physical sciences ,Microscopy ,Physics::Atomic Physics ,Laser power scaling ,Whispering-gallery wave ,0210 nano-technology ,business ,Tunable laser - Abstract
By means of atomic force microscopy (AFM) the spatial mapping of the laser intensity was performed on the cleavage of the whispering gallery modes (WGM) half-disk laser. The study was carried out in the near- and far-field regime. It showed a strong spatial divergence of different modes in the laser.
- Published
- 2016
22. Apertureless SPM method of light detection
- Author
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A. Dontsov, Philippe Girard, Prokhor A. Alekseev, Alexei N. Baranov, Roland Teissier, A. M. Monakhov, Richard Arinero, Mikhail S. Dunaevskiy, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
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Materials science ,Microscope ,Infrared ,Astrophysics::Cosmology and Extragalactic Astrophysics ,02 engineering and technology ,01 natural sciences ,Electromagnetic radiation ,law.invention ,Scanning probe microscopy ,Optics ,law ,0103 physical sciences ,Mechanical resonance ,Astrophysics::Galaxy Astrophysics ,ComputingMilieux_MISCELLANEOUS ,010302 applied physics ,[PHYS]Physics [physics] ,business.industry ,Resonance ,021001 nanoscience & nanotechnology ,Laser ,Optoelectronics ,Astrophysics::Earth and Planetary Astrophysics ,0210 nano-technology ,business ,Lasing threshold - Abstract
We demonstrate the effect of infrared (IR) illumination on mechanical resonance frequency of scanning probe microscope (SPM) probe. The analytical estimations permit to relate the observed effect with the SPM-probe heating by IR-radiation. This effect can be used for the SPM mapping of IR-radiation spatial distribution on the emitting surfaces. The proposed method demonstrates high sensitivity to the infrared radiation and lateral resolution in the sub-micron range. It was applied to visualize complex spatial structure of lasing modes on the mirror of whispering-gallery mode GaSb/GaAlAsSb/GaInAsSb laser.
- Published
- 2016
23. Optical and electrical properties of the MoSe2/graphene heterostructures
- Author
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Prokhor A. Alekseev, V. Yu. Davydov, F. A. Benimetskiy, Alexander N. Smirnov, Mikhail S. Dunaevskiy, Alexander A. Lebedev, S. P. Lebedev, and B R Borodin
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010302 applied physics ,Kelvin probe force microscope ,History ,Photoluminescence ,Materials science ,business.industry ,Graphene ,Schottky barrier ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Computer Science Applications ,Education ,law.invention ,Scanning probe microscopy ,law ,0103 physical sciences ,Monolayer ,Optoelectronics ,Work function ,0210 nano-technology ,business ,Bilayer graphene - Abstract
Optical and electrical properties of MoSe2 monolayer transferred to graphene/SiC substrate are studied by scanning probe microscopy and photoluminescence spectroscopy. By Kelvin probe microscopy it was measured a work function of the MoSe2 monolayer (4.3 eV) and it was revealed the n-type of doping. With the increasing of MoSe2 layers quantity the work function also increases which leads to the reducing of the Schottky barrier height between the SPM probe and the layers. Monolayer graphene quenches photoluminescence of the MoSe2 monolayer while the bilayer graphene does not perturb the photoluminescence.
- Published
- 2018
24. Piezoelectric Current Generation in Wurtzite GaAs Nanowires
- Author
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Erkki Lähderanta, V. A. Sharov, Prokhor A. Alekseev, A. I. Khrebtov, Mikhail S. Dunaevskiy, I. P. Soshnikov, G. E. Cirlin, Pavel Geydt, Volodymyr V. Lysak, and Rodion R. Reznik
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Current generation ,Materials science ,business.industry ,Atomic force microscopy ,Nanogenerator ,Nanowire ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Piezoelectricity ,0104 chemical sciences ,Optoelectronics ,General Materials Science ,0210 nano-technology ,business ,Wurtzite crystal structure - Published
- 2017
25. Apertureless scanning microscope probe as a detector of semiconductor laser emission
- Author
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Alexander Titkov, Paul Girard, Richard Arinero, Anton Dontsov, Mikhail S. Dunaevskiy, Roland Teissier, Alexei N. Baranov, Prokhor A. Alekseev, Andrei Monakhov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Médialab (Sciences Po) (Médialab), and Sciences Po (Sciences Po)
- Subjects
010302 applied physics ,Scanning Hall probe microscope ,Distributed feedback laser ,Physics and Astronomy (miscellaneous) ,Chemistry ,business.industry ,Far-infrared laser ,Physics::Optics ,Near and far field ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,Semiconductor laser theory ,law.invention ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,Scanning probe microscopy ,Optics ,law ,0103 physical sciences ,Microscopy ,Optoelectronics ,0210 nano-technology ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
An operating semiconductor laser has been studied using a scanning probe microscope. A shift of the resonance frequency of probe that is due to its heating by laser radiation has been analyzed. The observed shift is proportional to the absorbed radiation and can be used to measure the laser near field or its output power. A periodical dependence of the measured signal has been observed as a function of distance between the probe and the surface of the laser due to the interference of the outgoing and cantilever-reflected waves. Due to the multiple reflections resulting in the interference, the light absorption by the probe cantilever is greatly enhanced compared with a single pass case. Interaction of infrared emission of a diode laser with different probes has been studied.
- Published
- 2015
26. Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope
- Author
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Erkki Lähderanta, Harri Lipsanen, J. P. Kakko, Tuomas Haggren, Mikhail S. Dunaevskiy, Prokhor A. Alekseev, Pavel Geydt, Department of Micro and Nanosciences, Aalto-yliopisto, and Aalto University
- Subjects
History ,Materials science ,Passivation ,business.industry ,Schottky barrier ,Nanowire ,Nanotechnology ,Computer Science Applications ,Education ,Hysteresis ,Semiconductor ,Electrical resistivity and conductivity ,Optoelectronics ,Vapor–liquid–solid method ,business ,Layer (electronics) - Abstract
In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOx layer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.
- Published
- 2015
27. I–V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide
- Author
-
Harri Lipsanen, J. P. Kakko, Prokhor A. Alekseev, Tuomas Haggren, Erkki Lähderanta, Mikhail S. Dunaevskiy, Pavel Geydt, Ioffe Institute, LUT University, Department of Micro and Nanosciences, Department of Electronics and Nanoengineering, Aalto-yliopisto, and Aalto University
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,ta221 ,Nanowire ,Oxide ,Nanotechnology ,02 engineering and technology ,01 natural sciences ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,Electrical resistivity and conductivity ,0103 physical sciences ,010302 applied physics ,Resistive touchscreen ,ta213 ,business.industry ,Doping ,technology, industry, and agriculture ,Conductive atomic force microscopy ,021001 nanoscience & nanotechnology ,Hysteresis ,chemistry ,Optoelectronics ,Charge carrier ,0210 nano-technology ,business - Abstract
The control of nanowire-based device performance requires knowledge about the transport of charge carriers and its limiting factors. We present the experimental and modeled results of a study of electrical properties of GaAs nanowires (NWs), considering their native oxide cover. Measurements of individual vertical NWs were performed by conductive atomic force microscopy (C-AFM). Experimental C-AFM observations with numerical simulations revealed the complex resistive behavior of NWs. A hysteresis of current-voltage characteristics of the p-doped NWs as-grown on substrates with different types of doping was registered. The emergence of hysteresis was explained by the trapping of majority carriers in the surface oxide layer near the reverse-biased barriers under the source-drain current. It was found that the accumulation of charge increases the current for highly doped p+-NWs on n+-substrates, while for moderately doped p-NWs on p+-substrates, charge accumulation decreases the current due to blocking of the conductive channel of NWs.
- Published
- 2017
28. Light absorption by an atomic force microscope probe
- Author
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Yu. S. Polubavkina, N. V. Kryzhanovskaya, V. A. Sharov, Mikhail S. Dunaevskiy, and Prokhor A. Alekseev
- Subjects
History ,Scanning Hall probe microscope ,Microscope ,Atomic de Broglie microscope ,Materials science ,business.industry ,Physics::Optics ,Atomic force acoustic microscopy ,Scanning capacitance microscopy ,Computer Science Applications ,Education ,law.invention ,Scanning probe microscopy ,Optics ,law ,Magnetic force microscope ,business ,Non-contact atomic force microscopy - Abstract
In this paper a probe of an atomic force microscope (AFM) served as a detector of optical radiation. We investigated absorption of optical radiation in the visible range by commercially available Si and Si3N4 probes. It has been shown that the radiation in the far field is mainly absorbed in the probe tip. By scanning a laser beam with a diameter of ~ 0.7 microns by the AFM probe, a lateral resolution of ~ 1.5 microns was demonstrated. Numerical modeling of evanescent wave absorption by AFM probes showed enhancement of the absorption in the probes as compared with a flat surface. A Si3N4 probe more effectively absorbs the evanescent radiation.
- Published
- 2017
29. New scanning probe microscopy near-field imaging method for laser radiation intensity mapping
- Author
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Mikhail S. Dunaevskiy, Paul Girard, Alexei N. Baranov, A. N. Titkov, A. M. Monahov, Roland Teissier, and Prokhor A. Alekseev
- Subjects
Distributed feedback laser ,Materials science ,business.industry ,Far-infrared laser ,Physics::Optics ,Near and far field ,Scanning capacitance microscopy ,Laser ,law.invention ,X-ray laser ,Scanning probe microscopy ,Optics ,law ,Optoelectronics ,business ,Vibrational analysis with scanning probe microscopy - Abstract
Novel scanning probe microscopy method of near field imaging of laser radiation is proposed. The method providing a submicron spatial resolution is based on detection of a shift of the probe resonance related to its heating by absorbed radiation. The method has been realized with a conventional silicon probe and has been employed for visualization of infrared emission from a half-disk semiconductor whispering gallery mode laser. Keywords— scanning probe microscopy; near field; laser radiation
- Published
- 2014
30. Measurements of current‐voltage characteristics of separate single GaAs nanowhiskers
- Author
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Vyacheslav Egorov, G. E. Cirlin, Alexander Titkov, Petr Dementyev, Mikhail S. Dunaevskiy, Nikolay E. Polyakov, and Yuri Samsonenko
- Subjects
Materials science ,business.industry ,Schottky barrier ,Nanotechnology ,Heterojunction ,Substrate (electronics) ,Condensed Matter Physics ,Acceptor ,Semiconductor ,Electrode ,Optoelectronics ,business ,Layer (electronics) ,Electrical conductor - Abstract
In this work a method is proposed for measurements of current-voltage (I-V) characteristics for individual semiconductor nanowhiskers (NWs) standing on the growth surface. It is shown that conductive probe of atomic force microscope (AFM) can be placed at the top of nanowhiskers with a great precision and used as a stable local electrode. For that, a fixation of NWs is necessary to avoid lateral bending of NWs under pressure of AFM probe. In the present work we have studied current-voltage characteristics of NWs with radial heterostructure GaAs/AlGaAs grown under Au droplets on GaAs substrate. For fixation, NWs were partially overgrown with GaAs layer. The current-voltage characteristics measurements on the fixed NWs permitted to investigate the Si-doping of GaAlAs/GaAs NWs. They were found to be Schottky barrier p-type curves, what shows that Si-atoms incorporate into GaAs NWs with a formation of acceptor centres contrary to the case of bulk GaAs. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Published
- 2009
31. Near field imaging of a semiconductor laser by scanning probe microscopy without a photodetector
- Author
-
Andrey N. Baranov, Roland Teissier, Mikhail S. Dunaevskiy, Pascal Girard, A. N. Titkov, A. M. Monakhov, Prokhor A. Alekseev, Richard Arinero, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique Nucléaire d'Orsay (IPNO), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,Physics::Optics ,Atomic force acoustic microscopy ,Scanning gate microscopy ,02 engineering and technology ,Scanning capacitance microscopy ,01 natural sciences ,law.invention ,Scanning probe microscopy ,Optics ,law ,0103 physical sciences ,Microscopy ,ComputingMilieux_MISCELLANEOUS ,Astrophysics::Galaxy Astrophysics ,010302 applied physics ,business.industry ,021001 nanoscience & nanotechnology ,Laser ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,Optoelectronics ,0210 nano-technology ,business ,Vibrational analysis with scanning probe microscopy ,Photoconductive atomic force microscopy - Abstract
We propose an experimental method of near field optical imaging by scanning probe microscopy in which the probe itself serves as an infrared photodetector. The method providing a submicron spatial resolution is based on detection of a shift of the probe resonance related to its heating by absorbed IR radiation. The method does not require an apertured probe and can be realized with a conventional silicon probe used in atomic force microscopy. The method has been employed for visualization of infrared emission from a half-disk semiconductor whispering gallery mode laser.
- Published
- 2013
32. INFLUENCE OF SURFACE PASSIVATION ON ELECTRIC PROPERTIES OF INDIVIDUAL GaAs NANOWIRES STUDIED BY CURRENT-VOLTAGE AFM MEASUREMENTS
- Author
-
Prokhor A. Alekseev, Pavel Geydt, Tuomas Haggren, Erkki Lähderanta, Harri Lipsanen, J. P. Kakko, and Mikhail S. Dunaevskiy
- Subjects
010302 applied physics ,Materials science ,Passivation ,Silicon ,business.industry ,Nanowire ,General Physics and Astronomy ,chemistry.chemical_element ,Nanotechnology ,02 engineering and technology ,Conductive atomic force microscopy ,021001 nanoscience & nanotechnology ,01 natural sciences ,Threshold voltage ,chemistry ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,Absorption (electromagnetic radiation) ,business ,Layer (electronics) ,Surface states - Abstract
Current–voltage (I–V) characteristics of vertical p-GaAs nanowires (NWs) covered by different surface passivation materials were experimentally measured by conductive atomic force microscopy (C-AFM). The obtained I–V curves for individual NWs with a diameter of 100 nm covered with AlGaAs, GaN, GaP or InP shell layers were compared to analyse the influence of surface passivation on the density of surface states and choose the most beneficial passivating material for technological applications. We have found the absence of a Schottky barrier between the golden catalytic cap on the top of a NW and the nanowire situated below and covered with an ultrathin GaP passivating layer. It was suggested that passivating material can arrange the heterostructure configuration with the GaAs NW near the Au cap. The latter mechanism was proposed to explain a strong energy barrier found in nanowires covered with InP passivation. AlGaAs passivation affected the forward threshold voltage of nanowires for NWs, which was measured simultaneously with the resistivity of each individual vertical structure from an array by means of AFM in the regime of measuring the I–V curves and onefold calculations. We made an attempt to develop the methodology of measurement and characterization of electric properties of passivated NWs.
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