1. Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application
- Author
-
Shao-Yen Chiu, King-Poul Zhu, Jung-Hui Tsai, and Ying-Cheng Chu
- Subjects
Materials science ,Input offset voltage ,Heterostructure-emitter bipolar transistor ,business.industry ,Heterojunction bipolar transistor ,Amplifier ,Transistor ,Bipolar junction transistor ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,law.invention ,Condensed Matter::Materials Science ,law ,Logic gate ,Materials Chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Common emitter - Abstract
A novel functional InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor (HBT) is fabricated and demonstrated. Due to the avalanche multiplication and discontinuous confinement effects for electrons in the InGaAs quantum well and at InGaP/GaAs heterojunction, respectively, an interesting triple-route S-shaped negative-differential-resistance switch is observed under inverted operation mode at room temperature. In addition, the excellent transistor performances including a high current gain of 220 and a low offset voltage of 60 mV are achieved under normal operation mode. Consequently, the device could be used for signal amplifier under normal operation mode and multiple-valued logic circuit application under inverted operation mode.
- Published
- 2005
- Full Text
- View/download PDF