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A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor
- Source :
- The Fourth International Workshop on Junction Technology, 2004. IWJT '04..
- Publication Year :
- 2004
- Publisher :
- IEEE, 2004.
-
Abstract
- A functional InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor (HBT) is fabricated and demonstrated. Due to the avalanche multiplication and discontinuous confinement effects for electrons at InGaP/GaAs heterojunction and InGaAs quantum well, an interesting triple-route S-shaped negative-differential-resistance switch is observed under inverted operation mode at room temperature. In addition, the excellent transistor performances including a high current gain of 220 and a low offset voltage of 60 mV are achieved under normal operation mode. Consequently, the excellent switching characteristic and transistor action of the studied HBT provides a promise for amplifier and multiple-valued logic circuit applications.
Details
- Database :
- OpenAIRE
- Journal :
- The Fourth International Workshop on Junction Technology, 2004. IWJT '04.
- Accession number :
- edsair.doi...........83b0e63652068c4c7c9b5402e94d8b96
- Full Text :
- https://doi.org/10.1109/iwjt.2004.1306800