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Amongst various gaseous pollutants, NO2 is one of the major exhausts originating from fossil fuel and gas combustions in vehicle engines and power plants at high temperature. Under such a scenario, in situ and real-time gas detection and monitoring solutions are largely limited, which hinders the energy-efficient and resource-saving operations of these advanced energy systems. In this report, a new type of perovskite-sensitized β-Ga2O3 nanorod-array has been successfully fabricated to detect NOx at high temperature selectively and sensitively. The demonstrated gas sensors are highly sensitive to NO2 at 800 °C, with excellent reversible and reproducible response characteristics. Through the surface decoration of perovskite-type La0.8Sr0.2CoO3 (LSCO) nanoparticles, the sensitivity of β-Ga2O3 nanorod array gas sensors is enhanced by nearly an order of magnitude, along with much faster response dynamics. A remarkable selectivity toward oxidative gases was also demonstrated with the robust differentiation of NO2.

A combination of fused deposition modeling printing with atomic layer deposition (ALD) of titania was designed to achieve templated biomineralization and terminal odontogenic differentiation of dental pulp stem cells on three-dimensional (3D) printed polylactic acid (PLA) scaffolds. In the absence of the ALD-deposited titania coating, we had previously shown that both plating efficiency and differentiation are adversely impacted when scaffolds are produced by 3D printing rather than traditional polymer molding. These differences were removed when both printed and molded structures were coated with ALD of titania, which improved the outcomes regardless of the manufacturing method. In this case, on all titania-coated substrates, the plating efficiency increased, copious mineral deposition was observed, and RT-PCR indicated a significant upregulation of osteocalcin, a gene associated with mineral deposition. The influence of additional coatings of collagen, gelatin, or fibronectin on the ALD titania-coated and uncoated PLA-printed and molded scaffolds was also investigated. Upregulation of the odontogenic late-stage differentiation sibling protein, dentin sialoprotein, was observed on the collagen ALD-titania-coated scaffolds and to a lesser extent on the gelatin ALD-titania-coated scaffolds.

Recently, ultrathin metal-oxide thin film transistors (TFTs) have shown very high on-off ratio and ultra-sharp subthreshold swing, making them promising candidates for applications beyond conventional large-area electronics. While the on-off operation in typical TFTs results primarily from the modulation of charge carrier density by gate voltage, the high on-off ratio in ultrathin oxide TFTs can be associated with a large carrier mobility modulation, whose origin remains unknown. We investigate 3.5 nm-thick TiOx-based ultrathin TFTs exhibiting on-off ratio of ~106, predominantly driven by ~6-decade gate-induced mobility modulation. The power law behavior of the mobility features two regimes, with a very high exponent at low gate voltages, unprecedented for oxide TFTs. We find that this phenomenon is well explained by the presence of high-density tail states near the conduction band edge, which supports carrier transport via variable range hopping. The observed two-exponent regimes reflect the bi-exponential distribution of the density of band-tail states. This improved understanding would be significant in fabricating high-performance ultrathin oxide devices. The origin of large mobility modulation in ultrathin oxide transistors, promising for their high on-off ratio, remains mostly unknown. Here, a 106 gate-induced mobility modulation in 3.5 nm-thick TiOx transistors is explained by a high density of tail states, mediating variable range hopping of carriers.

Energy transfer (ET) from nanocrystals (NCs) has shown potential to enhance the optoelectronic performance of ultrathin semiconductor devices such as ultrathin Si solar cells, but the experimental identification of optimal device geometries for maximizing the performance enhancement is highly challenging due to a large parameter space. Here, we have demonstrated a general theoretical framework combining transfer matrix method (TMM) simulations and energy transfer (ET) calculations to reveal critical device design guidelines for developing an efficient, NC-based ET sensitization of ultrathin Si solar cells, which are otherwise infeasible to identify experimentally. The results uncover that the ET-driven NC sensitization is highly effective in enhancing the short circuit current (JSC) in sub-100 nm-thick Si layers, where, for example, the ET contribution can account for over 60% of the maximum achievable JSC in 10 nm-thick ultrathin Si. The study also reveals the limitation of the ET approach, which becomes ineffective for Si active layers thicker than 5 μm, being dominated by conventional optical coupling. The demonstrated simulation approach not only enables the development of efficient ultrathin Si solar cells but also should be applicable to precisely assessing and analyzing diverse experimental device geometries and configurations for developing new efficient ET-based ultrathin semiconductor optoelectronic devices.

We demonstrate a simple ex-situ inorganic infiltration route for transforming standard organic resists into high-performance positive tone hybrid resist platform. A model thin film PMMA-AlOx hybrid resist system has been synthesized by hybridization of PMMA with AlOx and investigated for electron beam lithography. The approach possesses full controllability of the resist performance in terms of critical does, patterning contrast reaching up to 30 and etch resistance for plasma-based pattern transfer processes. The high selectivity Si etching capability demonstrated using a low-temperature cryo-Si etch process, based on the controlled infiltration outperforms commercial resists and typical hard mask material thermal SiO2, with estimated achievable selectivity in excess of ~300. Si nanostructures down to ~30 nm with aspect ratio up to ~17 are also transferred into the Si substrate. Easy implementation and adaptability for different inorganic infiltrations, this platform is well capable of potentially delivering the resist performance and throughput necessary for EUV lithography.

Polymer–inorganic hybrid nanocomposites exhibit enhanced material properties, combining the advantages of both their organic and inorganic subcomponents. Extensive research is being carried out to functionalize polymers towards various improved physicochemical characteristics such as electrical, optical, and mechanical properties for various applications. Vapor-phase material infiltration is an emerging hybridization route, derived from atomic layer deposition, which facilitates uniform incorporation of inorganic entities into a polymer matrix, leading to novel applications in fields such as microelectronics, energy storage, smart coatings, and smart fabrics. In this article, recent advances in employing vapor-phase material infiltration as a hybridization and nanopatterning technique for various application avenues are reviewed.

Solution-processable organic semiconductors have potentials as visible photoelectrochemical (PEC) water splitting photoelectrodes due to their tunable small band gap and electronic energy levels, but they are typically limited by poor stability and photocatalytic activity. Here, we demonstrate the direct visible PEC water oxidation on solution-processed organic semiconductor thin films with improved stability and performance by ultrathin metal oxide passivation layers. N-type fullerene-derivative thin films passivated by sub-2 nm ZnO via atomic layer deposition enabled the visible PEC water oxidation at wavelengths longer than 600 nm in harsh alkaline electrolyte environments with up to 30 μA/cm2 photocurrents at the thermodynamic water-oxidation equilibrium potential and the photoanode half-lifetime extended to ∼1000 s. The systematic investigation reveals the enhanced water oxidation catalytic activity afforded by ZnO passivation and the charge tunneling governing the hole transfer through passivation l...

Despite successful applications of solution-processed organic–inorganic hybrid perovskites (OIHPs) such as archetypical methylammonium lead iodide (MAPI) in high-performance optoelectronic devices including solar cells and light emitting diodes, their application in field-effect transistors (FETs) remains relatively limited due to the unresolved issues caused by ion migration in OIHPs, such as screening of gate electric fields, lowered device on-off ratios and field-effect mobility, and large hysteresis in the FET transfer characteristics. Here, we report improved performances of the MAPI-based FET via a polymer-additive-based grain boundary (GB) passivation approach that suppresses the ion migration. Polycaprolactone (PCL) was incorporated into the MAPI FET as a GB-passivation additive as confirmed by scanning electron and atomic force microscopies. Unlike the typical n-type behavior and large transfer hysteresis in the starting, pristine MAPI FETs, the GB passivation by PCL led to a drastically reduced hysteresis in FET transfer characteristics, while hinting at an ambipolar transport and slight improvement in mobility, indicating a reduced ion migration in the PCL-incorporated MAPI FET. The effect of PCL GB passivation in suppressing ion migration was directly confirmed by the measured, increased activation energy for ion migration in the PCL-incorporated MAPI. The results not only represent the first report of the polymer-additive-based mitigation of the ion migration in the MAPI FET but also suggest potential utilities of the approach for enabling high-performance OIHP FETs and electronic devices in general.

Patterning materials efficiently at the smallest length scales is a longstanding challenge in nanotechnology. Electron-beam lithography (EBL) is the primary method for patterning arbitrary features, but EBL has not reliably provided sub-4 nm patterns. The few competing techniques that have achieved this resolution are orders of magnitude slower than EBL. In this work, we employed an aberration-corrected scanning transmission electron microscope for lithography to achieve unprecedented resolution. Here we show aberration-corrected EBL at the one nanometer length scale using poly(methyl methacrylate) (PMMA) and have produced both the smallest isolated feature in any conventional resist (1.7 ± 0.5 nm) and the highest density patterns in PMMA (10.7 nm pitch for negative-tone and 17.5 nm pitch for positive-tone PMMA). We also demonstrate pattern transfer from the resist to semiconductor and metallic materials at the sub-5 nm scale. These results indicate that polymer-based nanofabrication can achieve feature sizes comparable to the Kuhn length of PMMA and ten times smaller than its radius of gyration. Use of aberration-corrected EBL will increase the resolution, speed, and complexity in nanomaterial fabrication.

Atomically thin two-dimensional (2D) semiconductors boast numerous intriguing enhanced material properties for various potential electronic device applications. For optoelectronic devices, such as photodetectors and photovoltaics, an efficient light harvesting is highly demanded, and the relatively low absolute optical absorption of 2D semiconductors can, therefore, limit associated device performances, including photodetector responsivity and solar cell power conversion efficiency. Recently, the sensitization by quantum dots (QDs) has shown promises for improving the optical absorption in 2D semiconductors. In this talk, I will highlight our recent efforts towards utilizing QD sensitization for improving the photo-response of 2D semiconductor field-effect transistor (FET) photodetectors. The first example demonstrates a 500% enhancement in photocurrent response by the application of energy transfer from CdSe/ZnS core/shell QDs in 2D SnS2, a model 2D system with indirect band gap nature. Also detailed is the case of 2D MoS2, where we show that the light-intensity-dependent photo-response characterized by scanning photocurrent microscopy (SPCM) can distinguish two fundamental modes of interfacial interaction between QDs and 2D materials, namely energy and charge transfers, which are extremely difficult to distinguish under typically optical interrogation methods. I will try to discuss the potential implication of these two modes towards the optoelectronic application of QD-2D hybrid materials.

In this work, we have used synchrotron-based grazing incidence X-ray scattering to measure the molecular orientation and morphology of nanostructured thin films of blended poly(3-hexylthiophene)/[6,6]-phenyl C61-butyric acid methyl ester blends patterned with nanoimprint lithography. Imprinting the blend films at 150 °C results in significant polymer chain orientational anisotropy, in contrast to patterning the film at only 100 °C. The temperature-dependent evolution of the X-ray scattering data reveals that the imprint-induced polymer reorientation remains at high temperatures even after the patterned topographic features vanish upon melting. Photovoltaic devices fabricated from the blend films imprinted at 150 °C exhibit a ∼21% improvement in power conversion efficiency compared to those imprinted at 100 °C, consistent with a polymer chain configuration better suited to charge carrier collection.

Inverted polymer:fullerene bulk heterojunction solar cells employing a conjugated polyelectrolyte electron transfer layer display light soaking effects as the oxygen adsorbed on indium tin oxide (ITO) during an ambient air device processing induces interface charge trap states in the conjugated polyelectrolyte layer and reduces its interface dipole. The light soaking populates the trap states with photoexcited electrons and reinstates the electric dipole, leading to a recovery of efficient charge extraction and normal illuminated current–voltage characteristics consequently. The identified effect of adsorbed oxygen not only enables a remedy of the light soaking issue of the inverted solar cells via hydrogen plasma treatment of ITO but also suggests the importance of properly handling adsorbed oxygen species on ITO for achieving high performance organic devices based on ITO substrates in general.

We incorporated a thin but structurally dense TiO2 layer prepared by atomic layer deposition (ALD) as an efficient hole blocking layer in the TiO2 nanofiber based solid-state dye sensitized solar cell (ss-DSSC). The nanofiber ss-DSSCs having ALD TiO2 layers displayed increased open circuit voltage, short circuit current density, and power conversion efficiency compared to control devices with blocking layers prepared by spin-coating liquid TiO2 precursor. We attribute the improved photovoltaic device performance to the structural integrity of ALD-coated TiO2 layer and consequently enhanced hole blocking effect that results in reduced dark leakage current and increased charge carrier lifetime.

High photovoltaic device performance is demonstrated in ambient-air-processed bulk heterojunction solar cells having an active blend layer of organic poly(3-hexylthiophene) (P3HT): [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM), with power conversion efficiencies as high as 4.1%, which is comparable to state-of-the-art bulk heterojunction devices fabricated in air-free environments. High-resolution transmission electron microscopy is combined with detailed analysis of electronic carrier transport in order to quantitatively understand the effects of oxygen exposure and different thermal treatments on electronic conduction through the highly nanostructured active blend network. Improvement in photovoltaic device performance by suitable post-fabrication thermal processing results from the reduced oxygen charge trap density in the active blend layer and is consistent with a corresponding slight increase in thickness of an {approx}4 nm aluminum oxide hole-blocking layer present at the electron-collecting contact interface.

Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.

Despite numerous organic semiconducting materials synthesized for organic photovoltaics in the past decade, fullerenes are widely used as electron acceptors in highly efficient bulk-heterojunction solar cells. None of the non-fullerene bulk heterojunction solar cells have achieved efficiencies as high as fullerene-based solar cells. Design principles for fullerene-free acceptors remain unclear in the field. Here we report examples of helical molecular semiconductors as electron acceptors that are on par with fullerene derivatives in efficient solar cells. We achieved an 8.3% power conversion efficiency in a solar cell, which is a record high for non-fullerene bulk heterojunctions. Femtosecond transient absorption spectroscopy revealed both electron and hole transfer processes at the donor−acceptor interfaces. Atomic force microscopy reveals a mesh-like network of acceptors with pores that are tens of nanometres in diameter for efficient exciton separation and charge transport. This study describes a new motif for designing highly efficient acceptors for organic solar cells., In organic photovoltaics, the best-performing devices are often based on fullerene derivatives as the electron acceptor counterpart. Here, the authors present new molecular electron acceptors with a helical structure and achieve 8.3% power conversion efficiency.

International audience; The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >104 and current density of up to 44 mAcm–2. Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500 percent increase in the photocurrent response compared with the starting SnS2-only FET device and a spectral responsivity reaching over 650 A/W at 400 nm wavelength. The negligible electrical conductance in a control QD-only FET device suggests that energy transfer between QDs and SnS2 is the main mechanism responsible for the sensitization effect, which is consistent with the strong spectral overlap between QD photoluminescence and SnS2 optical absorption as well as the large nominal donor-acceptor interspacing between QD core and SnS2. We also find an enhanced charge carrier mobility in hybrid QD-SnS2 FETs which we attribute to a reduced contact Schottky barrier width due to an elevated background charge carrier density.

We review our current progress on semiconductor nanowires of β-Ga2O3, Si and GaN. These nanowires were grown using both vapor–solid (VS) and vapor–liquid–solid (VLS) mechanisms. Using transmission electron microscopy (TEM) we studied their morphological, compositional and structural characteristics. Here we survey the general morphologies, growth directions and a variety of defect structures found in our samples. We also outline a method to determine the nanowire growth direction using TEM, and present an overview of device fabrication and assembly methods developed using these nanowires.

High-resolution transmission electron microscopy (HRTEM) and cross-sectional transmission electron microscopy (XTEM) are used to characterize common defects in wurtzite GaN nanowires grown via a vapor-liquid-solid (VLS) mechanism. HRTEM shows that these nanowires contain numerous (001) stacking defects interspersed with small cubic GaN regions. Using XTEM, bicrystalline nanowires are discovered with twofold rotational twin axes along their growth directions, and are found to grow along high-index directions or vicinal to low-index planes. We propose a defect-mediated VLS growth model to qualitatively account for the prevalence of these extended defects, and discuss the implications of these defects for nanowire growth kinetics and device behavior.

GaN is a technologically important semiconductor with a wide direct bandgap (3.39 eV), and boasts strong light emission in the blue and UV regions of the electromagnetic spectrum. It finds extensive commercial applications in lasers and light-emitting diodes. Because of its high melting temperature, high breakdown field, and high saturation drift velocity, it is a prime candidate for high-temperature, high-voltage, and high-power optoelectronic-device applications. In recent years, research interest in GaN nanowires has increased significantly because, for sufficiently thin nanowires, quantumconfinement effects may be observed, which may lead to novel behavior and applications. GaN nanowires appear to be especially attractive as low-dimensional high-power blue and UV laser light sources, because it is anticipated that high optical gains and low lasing thresholds will be achievable when the nanowire diameter is smaller than the exciton radius. It has been demonstrated that GaN nanowires possess great potential for photonic-, optoelectronic-, and electronic-device applications. For practical device applications, nanowires have to be controllably assembled, precisely located, and individually contacted in order to build device architectures. This continues to be a formidable technical challenge. Traditional lithographic approaches are hindered by the need to register contacts to individual nanowires, although new methodologies to circumvent this limitation have been proposed. Recently, direct writing techniques using focused ion beams (FIBs) have been used to form interconnects to individual nanowires. To do this, an organoplatinum precursor gas flow was directed at the surface of the sample while the target region was irradiated with an energetic particle beam, which decomposed the gas and deposited Pt over the irradiated region. Decomposition of the precursor and Pt deposition can be achieved using focused beams of ions (IBID-Pt, where IBID = ion-beaminduced deposition) or electrons (EBID-Pt, where EBID = electron-beam-induced deposition). The unusually low resistance or ohmic contacts on n-type GaN nanowires suggest that IBID-Pt contacts are different from conventional thin-film Pt contacts, which generally exhibit a large Schottky barrier on n-GaN. Here we present a complete investigation of the structural and chemical character of FIB-deposited metal contacts on GaN nanowires, in order to understand how composition and microstructure affect the electrical performance. Contact structures have been traditionally studied using cross-sectional transmission electron microscopy (TEM). TEM enables imaging, diffraction, and spectroscopy at nearatomic spatial resolution on the same region of interest, providing a wealth of morphological, structural, and compositional information, so that even the most complex contact structures can be readily understood. Although many preparation techniques are capable of creating cross-sections suitable for TEM imaging, these generally offer little control over the region exposed for TEM observation and are, therefore, not useful for preparing cross-sections of our nanowire circuits. The so-called lift-out technique based on FIB machining gives high positional specificity, so we employed it to prepare cross-sections of individual IBID-Pt contacts for cross-sectional TEM imaging (see Experimental for details). Figures 1a,b are a typical pair of cross-sectional images obtained from the pristine nanowire segment away from the C O M M U N IC A TI O N S

Ultrathin semiconductor nanowires enable high-performance chemical sensors and photodetectors, but their synthesis and device integration by standard complementary metal-oxide-semiconductor (CMOS)-compatible processes remain persistent challenges. This work demonstrates fully CMOS-compatible synthesis and integration of parallel-aligned polycrystalline ZnO nanowire arrays into ultraviolet photodetectors via infiltration synthesis, material hybridization technique derived from atomic layer deposition. The nanowire photodetector features unique, high device performances originating from extreme charge carrier depletion, achieving photoconductive on–off ratios of >6 decades, blindness to visible light, and ultralow dark currents as low as 1 fA, the lowest reported for nanostructure-based photoconductive photodetectors. Surprisingly, the low dark current is invariant with increasing number of nanowires and the photodetector shows unusual superlinear photoconductivity, observed for the first time in nanowires, leading to increasing detector responsivity and other parameters for higher incident light powers. Temperature-dependent carrier concentration and mobility reveal the photoelectrochemical-thermionic emission process at grain boundaries, responsible for the observed unique photodetector performances and superlinear photoconductivity. The results elucidate fundamental processes responsible for photogain in polycrystalline nanostructures, providing useful guidelines for developing nanostructure-based detectors and sensors. The developed fully CMOS-compatible nanowire synthesis and device fabrication methods also have potentials for scalable integration of nanowire sensor devices and circuitries.

The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >104 and current density of up to 44 mAcm–2. Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple,...

We present a methodology for probing light-matter interactions in prototype photovoltaic devices consisting of an organic semiconductor active layer with a semitransparent metal electrical contact exhibiting surface plasmon-based enhanced optical transmission. We achieve high-spectral irradiance in a spot size of less than 100 μm using a high-brightness laser-driven light source and appropriate coupling optics. Spatially resolved Fourier transform photocurrent spectroscopy in the visible and near-infrared spectral regions allows us to measure external quantum efficiency with high sensitivity in small-area devices (

A core phthalocyanine platform allows engineering of the solubility properties the band gap, shifting the maximum absorption toward the red. A simple method for increasing the efficiency of heterojunction solar cells uses a self-organized blend of phthalocyanine chromophores fabricated by solution processing.

We describe a new Facility effort utilizing high brightness Fourier transform methods, including measurements of transmission, reflection, and photoconductivity spectra, to characterize nanomaterial-based model photovoltaic devices.

The incorporation of multiple donors into the bulk-heterojunction layer of organic polymer solar cells (PSCs) has been demonstrated as a practical and elegant strategy to improve photovoltaics performance. However, it is challenging to successfully design and blend multiple donors, while minimizing unfavorable interactions (e.g., morphological traps, recombination centers, etc.). Here, a new Förster resonance energy transfer-based design is shown utilizing the synergistic nature of three light active donors (two small molecules and a high-performance donor–acceptor polymer) with a fullerene acceptor to create highly efficient quaternary PSCs with power conversion efficiencies (PCEs) of up to 10.7%. Within this quaternary architecture, it is revealed that the addition of small molecules in low concentrations broadens the absorption bandwidth, induces cocrystalline molecular conformations, and promotes rapid (picosecond) energy transfer processes. These results provide guidance for the design of multiple-donor systems using simple processing techniques to realize single-junction PSC designs with unprecedented PCEs.

We realize a vertical channel polymer semiconductor field effect transistor architecture by confining the organic material within gratings of interdigitated trenches. The geometric space savings of a perpendicular channel orientation results in devices sourcing areal current densities in excess of 40 mA/cm(2), using a one-volt supply voltage, and maintaining near-ideal device operating characteristics. Vertical channel transistors have a similar electronic mobility to that of planar devices using the same polymer semiconductor, consistent with a molecular reorientation within confining trenches we understand through X-ray scattering measurements.

Gallium nitride (GaN) nanowires (NW) and various nanostructures were grown by thermal reaction of gallium oxide and ammonia. The interplay between Ga/N reactant ratio and characteristic lengths of polar surfaces explained morphology variation. Field effect transistors were patterned on 40~185 nm diameter NWs by Ga + focused ion beam (FIB) direct Pt deposition. The devices exhibited no gate responses with liner I-V for "small" diameter NWs. Linear I-V was unexpected since Pt forms Schottky barriers on n-GaN. I-V-T characteristics of the FIB-Pt contacts evolved from ohmic to rectifying with increasing NW diameter with strongly nonmetallic T-dependence. For small diameters, two-dimensional variable range hopping explained the contact conduction, the disorder being associated with ion-beam-induced sputtering and amorphization in the GaN under the FIB-Pt, as corroborated by transmission electron microscopy (TEM). For large diameters, back-to-back Schottky barriers explained the nonlinear I-V. High carrier concentration was confirmed explaining the absence of gate responses. Finally, Young's modulus E and quality factor Q of GaN NW were measured using in-situ TEM electromechanical resonance analysis. For large diameters, E was ~300 GPa but decreased for smaller diameters. Q was greater than was obtained from micromachined Si resonators with comparable surface-to-volume ratio, implying significant advantages of GaN NW for nanoelectromechanical applications.

The diameter-dependent Young's modulus, E, and quality factor, Q, of GaN nanowires were measured using electromechanical resonance analysis in a transmission electron microscope. E is close to the theoretical bulk value ( approximately 300 GPa) for a large diameter nanowire (d=84 nm) but is significantly smaller for smaller diameters. At room temperature, Q is as high as 2,800 for d=84 nm, significantly greater than what is obtained from micromachined Si resonators of comparable surface-to-volume ratio. This implies significant advantages of smooth-surfaced GaN nanowire resonators for nanoelectromechanical system (NEMS) applications. Two closely spaced resonances are observed and attributed to the low-symmetry triangular cross section of the nanowires.

Confining blended poly(3-hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester organic solar cell active layers within nanometer-scale cylindrical pores nearly double the supported short-circuit photocurrent density compared to equivalent unconfined volumes of the same blend and increases the poly(3-hexylthiophene) hole mobility in the blend by nearly 500 times. Grazing incidence x-ray diffraction measurements show that the confinement changes the polymer orientation distribution, suppressing low charge conductivity orientations while simultaneously disrupting polymer ordering.

We test the feasibility of using nanostructured electrodes in organic bulk heterojunction solar cells to improve their photovoltaic performance by enhancing their charge collection efficiency and thereby increasing the optimal active blend layer thickness. As a model system, small concentrations of single wall carbon nanotubes are added to blends of poly(3-hexylthiophene): [6,6]-phenyl-C61-butyric acid methyl ester in order to create networks of efficient hole conduction pathways in the device active layer without affecting the light absorption. The nanotube addition leads to a 22% increase in the optimal blend layer thickness from 90 nm to 110 nm, enhancing the short circuit current density and photovoltaic device efficiency by as much as ∼10%. The associated incident-photon-to-current conversion efficiency for the given thickness also increases by ∼10% uniformly across the device optical absorption spectrum, corroborating the enhanced charge carrier collection by nanostructured electrodes.

Thermal crosslinking using a suitable radical initiator simultaneously improves electrical conductivity in the semiconducting polymer poly(3-hexylthiophene) and makes the material insoluble. Crosslinked polythiophene shows as much as a fivefold increase in hole conductivity across the film thickness without any shift in spectral light absorption. Grazing incidence x-ray diffraction reveals more in-plane polymer lamellae stacking with only a small decrease in film crystallinity. Improved transverse conductivity increases the performance of model planar solar cells by threefold, from 0.07% to 0.2%. The ability to render polythiophene insoluble without disrupting film structural order enables fabrication pathways to more complex device architectures.