1. Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses
- Author
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Simone Gerardin, Stefano Bonaldo, Christian Enz, Alessandro Paccagnella, Andrea Baschirotto, Teng Ma, and Serena Mattiazzo
- Subjects
interface traps ,Nuclear and High Energy Physics ,FinFETs ,shallow trench isolation ,Materials science ,border traps ,charge trapping ,16 nm ,Transistors ,Annealing ,Fin (extended surface) ,Fingers ,Degradation ,High doses ,shallow trench isolation (sti) ,Irradiation ,Electrical and Electronic Engineering ,total ionizing dose (tid) ,mosfets ,Temperature measurement ,business.industry ,low-frequency noise ,DC static characteristics ,finger number ,Nuclear Energy and Engineering ,ingaas finfets ,fin number ,FinFET ,Optoelectronics ,Degradation (geology) ,Total ionizing dose ,business ,Transconductance - Abstract
This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO2) and then annealed for 24 h at 100 degrees C. The TID responses of nFinFETs are insensitive to the fin number, as dominated by border and interface trap generation in shallow trench isolation (STI) and/or gate oxide. However, pFinFETs show a visible fin-number dependence with worst tolerance of transistors with the smallest number of fins. The fin number dependence may be related to a larger charge trapping in STI located at the opposite lateral sides of the first and last fins. In addition, both n- and p-FinFETs exhibit an almost TID insensitivity to the finger number. During the design of integrated circuits, the TID tolerance of electronic systems can be enhanced by preferably using transistors with a higher number of fins than fingers.
- Published
- 2022